JPS6054171U - liquid crystal display device - Google Patents

liquid crystal display device

Info

Publication number
JPS6054171U
JPS6054171U JP14611183U JP14611183U JPS6054171U JP S6054171 U JPS6054171 U JP S6054171U JP 14611183 U JP14611183 U JP 14611183U JP 14611183 U JP14611183 U JP 14611183U JP S6054171 U JPS6054171 U JP S6054171U
Authority
JP
Japan
Prior art keywords
liquid crystal
display device
crystal display
source
tpt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14611183U
Other languages
Japanese (ja)
Other versions
JPH0314652Y2 (en
Inventor
武貞　肇
Original Assignee
三洋電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Priority to JP14611183U priority Critical patent/JPS6054171U/en
Publication of JPS6054171U publication Critical patent/JPS6054171U/en
Application granted granted Critical
Publication of JPH0314652Y2 publication Critical patent/JPH0314652Y2/ja
Granted legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図イ９口は従来構造を示す上面図並びに断面図、第
２図イ９口は本考案装置の構造を示す上面図並びに断面
図であって、３はゲート電極、５はアモルファスシリコ
ン層、６，７はソース、ドレイン電極、を夫々示してい
る。Figure 1A9 shows a top view and a cross-sectional view of a conventional structure, FIG. , 6 and 7 indicate source and drain electrodes, respectively.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 透明ガラス基板上に、ゲート電極、絶縁膜、アモルファ
スシリコン層、並びにソース、ドレイン電極を順次積層
してＴＰＴを形成すると共に、そのＴＰＴのソース、ド
レイン電極の何れか一方に透明表示電極を接続して構成
した液晶ストリツクス表示装置に於て、上記ソース、ド
レイン各電極をその間隔を略一定として互に折曲形成し
て成る液晶表示装置。A TPT is formed by sequentially laminating a gate electrode, an insulating film, an amorphous silicon layer, and source and drain electrodes on a transparent glass substrate, and a transparent display electrode is connected to either the source or drain electrode of the TPT. A liquid crystal display device constructed by bending the source and drain electrodes with substantially constant intervals.
JP14611183U 1983-09-20 1983-09-20 liquid crystal display device Granted JPS6054171U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14611183U JPS6054171U (en) 1983-09-20 1983-09-20 liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14611183U JPS6054171U (en) 1983-09-20 1983-09-20 liquid crystal display device

Publications (2)

Publication Number Publication Date
JPS6054171U true JPS6054171U (en) 1985-04-16
JPH0314652Y2 JPH0314652Y2 (en) 1991-04-02

Family

ID=30325328

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14611183U Granted JPS6054171U (en) 1983-09-20 1983-09-20 liquid crystal display device

Country Status (1)

Country Link
JP (1) JPS6054171U (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60233858A (en) * 1984-05-04 1985-11-20 Nec Corp Thin film transistor
JPH0225038A (en) * 1988-07-13 1990-01-26 Seikosha Co Ltd Silicon thin film transistor array and its manufacture
JP2011233882A (en) * 2010-04-07 2011-11-17 Semiconductor Energy Lab Co Ltd Transistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60233858A (en) * 1984-05-04 1985-11-20 Nec Corp Thin film transistor
JPH0225038A (en) * 1988-07-13 1990-01-26 Seikosha Co Ltd Silicon thin film transistor array and its manufacture
JP2011233882A (en) * 2010-04-07 2011-11-17 Semiconductor Energy Lab Co Ltd Transistor
US9401407B2 (en) 2010-04-07 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Transistor

Also Published As

Publication number Publication date
JPH0314652Y2 (en) 1991-04-02

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