JPS58112323A - 電子ビ−ムアニ−ル方法 - Google Patents

電子ビ−ムアニ−ル方法

Info

Publication number
JPS58112323A
JPS58112323A JP20954081A JP20954081A JPS58112323A JP S58112323 A JPS58112323 A JP S58112323A JP 20954081 A JP20954081 A JP 20954081A JP 20954081 A JP20954081 A JP 20954081A JP S58112323 A JPS58112323 A JP S58112323A
Authority
JP
Japan
Prior art keywords
silicon
oxide film
electron beams
layer
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20954081A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0355975B2 (enrdf_load_stackoverflow
Inventor
Seiichiro Kawamura
河村　誠一郎
Junji Sakurai
桜井　潤治
Motoo Nakano
元雄 中野
Kenichi Kawashima
川島　憲一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP20954081A priority Critical patent/JPS58112323A/ja
Publication of JPS58112323A publication Critical patent/JPS58112323A/ja
Publication of JPH0355975B2 publication Critical patent/JPH0355975B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP20954081A 1981-12-26 1981-12-26 電子ビ−ムアニ−ル方法 Granted JPS58112323A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20954081A JPS58112323A (ja) 1981-12-26 1981-12-26 電子ビ−ムアニ−ル方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20954081A JPS58112323A (ja) 1981-12-26 1981-12-26 電子ビ−ムアニ−ル方法

Publications (2)

Publication Number Publication Date
JPS58112323A true JPS58112323A (ja) 1983-07-04
JPH0355975B2 JPH0355975B2 (enrdf_load_stackoverflow) 1991-08-27

Family

ID=16574492

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20954081A Granted JPS58112323A (ja) 1981-12-26 1981-12-26 電子ビ−ムアニ−ル方法

Country Status (1)

Country Link
JP (1) JPS58112323A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59178719A (ja) * 1983-03-30 1984-10-11 Agency Of Ind Science & Technol 電子ビームアニール方法
JPH0365259U (enrdf_load_stackoverflow) * 1989-10-27 1991-06-25
US6858508B2 (en) * 2000-09-29 2005-02-22 Canon Kabushiki Kaisha SOI annealing method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56142630A (en) * 1980-04-09 1981-11-07 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56142630A (en) * 1980-04-09 1981-11-07 Fujitsu Ltd Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59178719A (ja) * 1983-03-30 1984-10-11 Agency Of Ind Science & Technol 電子ビームアニール方法
JPH0365259U (enrdf_load_stackoverflow) * 1989-10-27 1991-06-25
US6858508B2 (en) * 2000-09-29 2005-02-22 Canon Kabushiki Kaisha SOI annealing method

Also Published As

Publication number Publication date
JPH0355975B2 (enrdf_load_stackoverflow) 1991-08-27

Similar Documents

Publication Publication Date Title
JPS5861622A (ja) 単結晶薄膜の製造方法
JPS5939790A (ja) 単結晶の製造方法
JPS58112323A (ja) 電子ビ−ムアニ−ル方法
JPS6115319A (ja) 半導体装置の製造方法
JPH0419698B2 (enrdf_load_stackoverflow)
JPH02112227A (ja) 半導体結晶層の製造方法
Cline Silicon thin films formed on an insulator by recrystallization
JPS59147425A (ja) 半導体結晶膜の形成方法
JPS61108121A (ja) 半導体装置の製造方法
JPS6130024A (ja) Ｓｏｉ形成方法
JPS58114435A (ja) レザ−アニ−ル方法
JPS5825220A (ja) 半導体基体の製作方法
JPH0371767B2 (enrdf_load_stackoverflow)
JPH0354819A (ja) Ｓｏｉ基板の製造方法
JPS5978999A (ja) 半導体単結晶膜の製造方法
JPS6221789A (ja) 再結晶化法
JPH0449250B2 (enrdf_load_stackoverflow)
JPS6388819A (ja) 半導体装置の製造方法
JPH0360018A (ja) 結晶性シリコンの製造方法
JPH01245509A (ja) 半導体結晶層の形成方法
JPS6130022A (ja) Ｓｏｉ形成方法
JPS6235511A (ja) 半導体薄膜結晶層の製造方法
JPH0372618A (ja) 半導体膜の再結晶化法
JPS61123125A (ja) 半導体装置の製造方法
JPH02137219A (ja) 固相エピタキシャル成長方法