JPS5810827A - Forming device for minute pattern of negative type resist - Google Patents

Abstract

PURPOSE:To complete post-polymerization rapidly, and to form the uniform pattern efficiently by mounting a heat treatment chamber thermally treating a resist film after drawing while being adjoined to an electron ray irradiating chamber through a partition wall with a shutter. CONSTITUTION:A substrate 13 to be processed coated with the negative resist is held by a holding base 14, and forwarded to the electron ray irradiating chamber 3 through the first vacuum valve 5, a pre-treatment chamber 2 and the second vacuum valve 52, and the desired pattern is drawn. The substrate is moved to the heat treatment chamber 4 through the third vacuum valve 53, and thermally treated by means of a heating base 10 previously heated at a fixed temperature. Accordingly, the motility of the polymer matrix of the negative type resist is improved through heat treatment, the recombination of mutual polymer radicals and addition to other functional groups are facilitated, post- polymerization after irradiating electron rays is completed in a short time, and the resist pattern, residual film thickness thereof is uniform and which has high accuracy, can be formed efficiently through subsequent development.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an apparatus used to form molded AA turns from negative resist.

In electron beam-sensitive negative resists, polyradicals generated in some form in the resist by electron beam irradiation are added to functional groups in the resist, such as dalicidyl groups in double bonds, or ! Crosslinking occurs between 49 molecules by recombining the simaturgical molecules. When the ζUshi9 resist is developed, the irradiated crosslinked portions become insolubilized in the current solution, and the unirradiated portions are selectively dissolved and removed to form a resist pattern. During the above electron beam irradiation, depending on the type of negative resist, the so-called post-polymerization effect, in which crosslinking continues even after the electron beam irradiation has finished, may occur. . Figure 1 is a characteristic diagram showing an example of the post-polymerization effect, showing the remaining film thickness when left in vacuum for a certain period of time after electron beam irradiation, taken out and developed, and the remaining film thickness when taken out and developed under direct electron tSSS radiation. Thickness and O
It is expressed as a ratio, and m in the figure is glycidyl methacrylate-methyl acrylate copolymer (co
Characteristic line of negative resist consisting of p), la-so 2
-Cool ethyl vinyl ether (cg■) $1.6 Characteristic line of negative resist. It can be seen that the polymerization becomes active and the post-polymerization stops at the 9th point of contact.

Incidentally, in recent years, in microfabrication processes such as L81 using silicon wafers as substrates, the wafer size has been increasing in diameter from the viewpoint of cost reduction. In electron beam drawing on a nine-negative resist coated on such a large area wafer, it takes a considerable amount of time to complete the drawing. Even if the film is removed from the irradiation device and subjected to in-situ processing, the post-polymerization time differs between the drawing start point and the drawing end point, so the remaining film thickness will be non-uniform and it will be difficult to form a resist nolin with high precision.

As a means to avoid the above-mentioned problems, a method has conventionally been used in which, after completion of drawing, the material is stored in an electron beam irradiation device until post-polymerization is completed on all the drawing surfaces. However, depending on the type of negative resist film, it may take several hours to complete the post-polymerization, resulting in a disadvantage that the electron beam irradiation device is used for a long time, making it uneconomical.

The present invention has been made in order to eliminate the above-mentioned drawbacks, and an object thereof is to provide an apparatus for forming fine four-turns of a negative resist, which can quickly complete post-rubber polymerization by heat treatment after electron beam irradiation.

Hereinafter, the present invention will be explained in detail based on examples.

In the figure, 1 is a vacuum chamber, and this chamber 1 is provided with a pretreatment chamber 2, an electron beam irradiation chamber 3, and a heat treatment chamber 4, which are partitioned from each other, in order from the left side.

A first vacuum valve 51 that can be opened and closed is provided in the chamber 1 on the inlet side of the substrate to be processed in the pretreatment plan 2, and a guide is provided in the pretreatment chamber 2 to guide the substrate to be processed that is supplied from the inlet side. A plate 61 is provided.

Further, in the upper part of the electron beam irradiation chamber 3, an electron beam irradiation system 8 is provided which includes an electron gun for emitting an electron beam, an optical lens, a Δ-arch for changing the emission direction of the stain beam by an external control system 7, and the like. is provided. A stage 9 movable in the XY directions is disposed in the lower part of the electron beam irradiation system 8 in the irradiation chamber 3V'3, and on the left and right sides of this stage 9 there are guide plates 6m.
.

6m is installed. In addition, the partition wall that partitions the electron beam irradiation g1s and the pretreatment chamber 2 includes a shutter that can be opened and closed.
A second vacuum valve 53 is provided as a second vacuum valve.

Further, in the heat treatment chamber 4, for example, Nichrome i! A heat treatment table 10 having a built-in device (not shown) is provided. A $3 vacuum valve 5s that can be opened and closed is provided on the partition wall that partitions the heat treatment chamber 4 and the electron beam irradiation chamber 1, and the chamber 1 on the substrate outlet side of the heat treatment chamber 4 is provided with a $3 vacuum valve 5s that can be opened and closed.
A fourth vacuum valve 54 is provided as a shutter that can be opened and closed freely. The pretreatment chamber 2 and the heat treatment chamber 4 are connected to an exhaust system 11, and the pretreatment chamber 2 and the exhaust system 11 are connected to each other.
A cock 121, 111 is installed in each of the piping connecting the heat treatment chamber 4 and the exhaust system 11.Next, the formation of a fine pattern on a negative resist using the above-mentioned apparatus will be explained.

First, the substrate to be processed IJ coated with the negative lid resist film is set on the holding table 14, and the first substrate with the holding table 14 opened is
The vacuum valve 51 sends air into the pretreatment chamber 2, and the vacuum is placed on the guide plate 6. After closing the first vacuum valve 51, the cock 121 is opened to allow the exhaust system 11 to vacuum the pretreatment chamber 2. Make it. Continuing, after closing the column 12 and opening the second vacuum valve 53 between the pretreatment chamber 2 and the electron beam irradiation chamber 3, the holding table 14 is moved through the guide plate 63 inside the irradiation chamber 3. Fix it on stage 9. In this state, the control system 1 causes the stain beam irradiation system 8 to
Then, the stage 9 is controlled to draw a desired arm turn on the negative resist film on the substrate 13 to be processed. After drawing,
Open the third vacuum valve 5m between the electron beam irradiation chamber 3 and the heat treatment chamber 4, move the holding table 14 via the guide plate 6s to the heat treatment chamber 4 which has been evacuated by opening the door 122 in advance,
The rattan 3 is placed on the heat treatment table 10 in the chamber 4, and the rattan 3 vacuum valve 5s is closed. The heat treatment table 10 is controlled in advance to a predetermined temperature by the heat generated by the nichrome wire, and after heat-treating the negative resist film of the substrate 13 to be processed on the holding table 14 for a predetermined time, Close the fourth vacuum valve 54, take out the holding table 14, and place the workpiece substrate 1 set thereon.
Remove 3 and perform development.

Therefore, the apparatus of the present invention has an electron beam irradiation chamber 3 and a heat treatment chamber 4.
Since these chambers 3 and 4 are partitioned by a partition wall having a third vacuum valve 51 as a shutter, the negative resist film after drawing in the electron beam irradiation chamber 3 is exposed to the presence of oxygen. The heat treatment can be performed in the heat treatment chamber 4 without any heat treatment. As a result, the post-polymerization of the negative lid resist can be completed in a short time, and the operating time of the apparatus can be significantly reduced. In other words, the high mobility of the V radicals that are activated by electron beam irradiation makes it easy for the radicals to recombine with each other and to add to other functional groups, and the movement of the I Lima matrix increases. The properties are determined by temperature, and the higher the temperature, the higher the mobility. Therefore, as mentioned above, when heat treatment is applied to the negative resist after electron ** irradiation, the mobility of the 4-lima matrix increases and the mobility increases. Polymerization is completed quickly.

In fact, using the above-mentioned apparatus of the present invention, the negative resist shown in the table below is heat-treated after /g turn drawing at the temperature shown in the same table in a heat treatment chamber, and during this heat treatment, the film after development is When the time required for the thickness to become constant was investigated, it was found that post-polymerization was quickly completed in the heat-treated negative resist as shown in the same table.

Table *14ty-2-10 ethyl vinyl ether 2 Dalicidyl methacrylate methyl acrylate copolymer Note that the atmosphere in the heat treatment chamber of the apparatus according to the present invention is not limited to the vacuum atmosphere as in the above example, but is chemically A similar effect can be obtained in a nitrogen gas or aldine gas atmosphere, which has no fear of reacting with lima radicals. The heat source of the heat treatment chamber is not limited to the nichrome wire, but may also be a heat source such as a hot external ray tap or a Hertier element, which does not cause the negative resist to be sensitive and can control the heat treatment temperature of the resist film.

As described in detail above, according to the apparatus of the present invention, post-polymerization can be quickly completed by heat treatment in a state where negative molding after electron beam irradiation (17. It has remarkable effects such as being able to efficiently form resist arm turns with uniform layer thickness and high precision.

[Brief explanation of the drawing]

FIG. 1 is a characteristic diagram showing the post-polymerization effect of a negative resist, and FIG. 2 is a schematic explanatory diagram of a fine pattern forming apparatus showing a simple embodiment of the present invention. 1--Vacuum chamber, 2--Pre-treatment chamber, 3--Electron beam irradiation chamber, 4--Heat treatment chamber, 51-54--Vacuum valve,
β'-・Electron beam irradiation system, 9... stage, 10...
Heat treatment table, 11--vacuum system, 13--substrate to be processed. Applicant's agent Patent attorney Takehiko Suzue Figure 1 0 + 2 3
4den), the descent of ' in the silent shooting it-] (nr)
Figure 2

Claims (1)

[Claims] There is an electron beam irradiation chamber in which a negative resist is irradiated with an electron beam to draw a fine pattern, and the electron beam irradiation chamber is connected to the electron beam irradiation chamber through a partition wall with a shutter that can be opened and closed. Heat up the negative genus Gyst! & a heat treatment chamber for spotting.
aΔ turn forming device.