JPH0472710A - Exposure device - Google Patents
Exposure deviceInfo
- Publication number
- JPH0472710A JPH0472710A JP2186056A JP18605690A JPH0472710A JP H0472710 A JPH0472710 A JP H0472710A JP 2186056 A JP2186056 A JP 2186056A JP 18605690 A JP18605690 A JP 18605690A JP H0472710 A JPH0472710 A JP H0472710A
- Authority
- JP
- Japan
- Prior art keywords
- infrared
- resist film
- exposure
- intensity
- shutter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 claims abstract description 27
- 239000004065 semiconductor Substances 0.000 abstract description 17
- 239000000758 substrate Substances 0.000 abstract description 16
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052753 mercury Inorganic materials 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract 1
- 229940114081 cinnamate Drugs 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- WBYWAXJHAXSJNI-VOTSOKGWSA-M trans-cinnamate Chemical compound [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体集積回路の製造工程に用いられる露
光装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an exposure apparatus used in the manufacturing process of semiconductor integrated circuits.
〔従来の技術］
第４図は従来の露光装置を説明するための断面図である
。[Prior Art] FIG. 4 is a sectional view for explaining a conventional exposure apparatus.
第４図において、１は水銀ランプ、２はレンズ、３ば水
銀ランプ１により照射する紫外線、４はシャッタ、６は
半導体基板、７は半導体基板６上にレジストを塗布する
ことにより形成されたレジスト膜、１２はレクチル、１
３はシャッタ４の開閉を制御するシャッタ開閉装置であ
る。またａは非露光領域、ｂは露光領域を示す。In FIG. 4, 1 is a mercury lamp, 2 is a lens, 3 is an ultraviolet ray irradiated by the mercury lamp 1, 4 is a shutter, 6 is a semiconductor substrate, and 7 is a resist formed by applying a resist on the semiconductor substrate 6. membrane, 12 is retyl, 1
3 is a shutter opening/closing device that controls opening and closing of the shutter 4; Further, a indicates a non-exposed area, and b indicates an exposed area.
このように構成された従来の露光装置について、以下説
明する。A conventional exposure apparatus configured in this manner will be described below.
半導体基板６上のレジスト膜７を露光する場合、シャッ
タ開閉装置１３によりシャ、り４を開け、水銀ランプ１
により紫外線３をレンズ２およびレクチル１２を介して
レジスト膜７の露光領域すに照射することにより、露光
を行う。When exposing the resist film 7 on the semiconductor substrate 6, the shutter opening/closing device 13 opens the shutter 4, and the mercury lamp 1 is turned on.
Exposure is performed by irradiating the exposed area of the resist film 7 with ultraviolet rays 3 through the lens 2 and the reticle 12.
この際、レジスト膜７の露光時間は、予めツヤツタ開閉
装置１３に設定されており、露光時間に達するとシャッ
タ開閉装置１３によりシャンク４を閉しることによって
露光が終了される。At this time, the exposure time of the resist film 7 is set in advance in the gloss opening/closing device 13, and when the exposure time is reached, the shutter opening/closing device 13 closes the shank 4, thereby ending the exposure.
このように従来の露光装置では、予め露光時間をシャッ
タ開閉装置１３に設定することによりレジスト膜７の露
光時間を制御しており、半導体基板６上のレジスト１１
１７に対して連続して露光が行われる。In this way, in the conventional exposure apparatus, the exposure time of the resist film 7 is controlled by setting the exposure time in advance in the shutter opening/closing device 13.
17 are exposed continuously.
〔発明が解決しようとする諜Ｂ］
しかしながら、このように従来の露光装置では、予め設
定された同一の露光時間により半導体基板６上のレジス
ト膜７に対する露光時間が制御されるため、異なる半導
体基板６ごとのレジスト膜７の厚みの相違または同一半
導体基板６上のレジスト膜の厚みの不均一により、レジ
スト膜７がオーバ露光されたり、またはアンダー露光さ
れたりするという問題があった。このように不均一な露
光を行ったレジスト膜を現像した場合、所望の寸法を有
するレジストパターンを得ることができない。[Intelligence B to be Solved by the Invention] However, in the conventional exposure apparatus as described above, the exposure time for the resist film 7 on the semiconductor substrate 6 is controlled by the same preset exposure time. There is a problem in that the resist film 7 is overexposed or underexposed due to differences in the thickness of the resist film 7 for each semiconductor substrate 6 or non-uniformity in the thickness of the resist film on the same semiconductor substrate 6. When a resist film subjected to such non-uniform exposure is developed, a resist pattern having desired dimensions cannot be obtained.
この発明の目的は上記問題点に鑑み、寸法制御の精度を
向上させたレジストパターンを得ることのできる露光装
置を提供することである。SUMMARY OF THE INVENTION In view of the above-mentioned problems, an object of the present invention is to provide an exposure apparatus that can obtain a resist pattern with improved precision in dimensional control.
〔課題を解決するための手段］
この発明の露光装置は、赤外線照射装置と赤外線強度検
出装置とシャフタ開閉装置とを備えたものである。赤外
線照射装置は、露光前および露光中にレジスト膜に赤外
線を照射する。赤外線強度検出装置は、露光前および露
光中にレジスト膜に照射した赤外線の反射光の強度を検
出する。シャ、り開閉装置は、赤外線強度検出装置の露
光中の検出出力が露光前の検出出力に対して一定の比に
達したときシャッタを閉しる。[Means for Solving the Problems] An exposure apparatus of the present invention includes an infrared irradiation device, an infrared intensity detection device, and a shutter opening/closing device. The infrared irradiation device irradiates the resist film with infrared rays before and during exposure. The infrared intensity detection device detects the intensity of reflected infrared light irradiated onto the resist film before and during exposure. The shutter opening/closing device closes the shutter when the detection output of the infrared intensity detection device during exposure reaches a certain ratio to the detection output before exposure.
［作用］
この発明の構成によれば、露光前および露光中に、赤外
線照射装置によりレジスト膜に照射した赤外線の反射光
の強度を赤外線強度検出装置で検出し、この赤外線強度
検出装置の露光中の検出出力が露光前の検出出力に対し
て一定の比に達したときシャンク開閉装置によりシャン
クを閉し、露光を終了することによって、レジスト膜の
露光時間を制御する。すなわち、従来のように同一の露
光時間を予めシャッタ開閉装置に設定することなく、露
光に伴う赤外線の反射光の強度の変化を検出することに
より、レジスト膜の露光時間を制御する。したがって、
レジスト膜の厚みの不均一または相違に左右されること
なく、常にレジスト膜の露光状態を最適化することがで
きる。[Function] According to the configuration of the present invention, before and during exposure, the infrared intensity detection device detects the intensity of the reflected infrared light irradiated onto the resist film by the infrared irradiation device, and the infrared intensity detection device detects the When the detected output reaches a certain ratio to the detected output before exposure, the shank is closed by the shank opening/closing device and the exposure is ended, thereby controlling the exposure time of the resist film. That is, the exposure time of the resist film is controlled by detecting changes in the intensity of reflected infrared light accompanying exposure, without setting the same exposure time in advance in a shutter opening/closing device as in the conventional method. therefore,
The exposure state of the resist film can always be optimized regardless of non-uniformity or difference in the thickness of the resist film.
［実施例〕
この発明の一実施例を第１図ないし第３図に基づいて説
明する。[Embodiment] An embodiment of the present invention will be described based on FIGS. 1 to 3.
第１図はこの発明の一実施例の露光装置を説明するため
の断面図である。FIG. 1 is a sectional view for explaining an exposure apparatus according to an embodiment of the present invention.
第１図において、１は水銀ランプ、２はレンズ、３は水
銀ランプ１より曜射する紫外線、４はシャッタ、５はシ
ャッタ４の開閉を制御するシャッタ開閉装置、６は半導
体基板、７は半導体基板６上にレジストを塗布すること
により形成したレジスト膜、８は赤外線照射装置、９は
赤外線照射装置８により照射する赤外線、１０は半導体
基板６により反射した赤外線反射光、１１は赤外線反射
光の強度を検出する赤外線強度検出装置、１２はレクチ
ルである。またａはレジスト膜７の非露光頭載、ｂはレ
ジスト膜７の露光領域を示す。In FIG. 1, 1 is a mercury lamp, 2 is a lens, 3 is an ultraviolet ray emitted from the mercury lamp 1, 4 is a shutter, 5 is a shutter opening/closing device that controls opening and closing of the shutter 4, 6 is a semiconductor substrate, and 7 is a semiconductor A resist film formed by applying a resist on a substrate 6, 8 an infrared irradiation device, 9 an infrared ray irradiated by the infrared irradiation device 8, 10 an infrared reflected light reflected by the semiconductor substrate 6, and 11 an infrared reflected light. An infrared intensity detection device for detecting intensity, 12 is a reticle. Further, a indicates the unexposed area of the resist film 7, and b indicates the exposed area of the resist film 7.
第２図（ａ）、 （ｂ）は実施例のレジスト膜７の化学
組成を示す図である。FIGS. 2(a) and 2(b) are diagrams showing the chemical composition of the resist film 7 of the example.
レジストとして、第２図（ａ）に示すような現在−般に
広く利用されているネガ型レジストの一つであるポリ桂
皮酸ビニル系のレジストを用い、このレジストを半導体
基板６上に塗布することによりレジスト膜７を形成した
。As the resist, a polyvinyl cinnamate resist, which is one of the negative resists currently widely used, as shown in FIG. 2(a), is used, and this resist is applied onto the semiconductor substrate 6. As a result, a resist film 7 was formed.
このように構成した露光装置について、以下説明する。The exposure apparatus configured in this manner will be described below.
半導体基板６上にレジスト膜７を形成した後、露光前す
なわちシャッタ４を閉じた状態で、赤外線照射装置８に
より波長５．９５Ｃμｍ］〜６．１６１μｍ〕の赤外線
９をレジスト膜７の露光領域すおよび半導体基板６上に
照射し、さらに半導体基板６により反射した赤外線反射
光１０の強度を赤外線強度検出装置１１で検出する。こ
の赤外線強度検出装置１１の露光前の検出出力赤外線反
射光強度■。とする。After forming the resist film 7 on the semiconductor substrate 6, before exposure, that is, with the shutter 4 closed, an infrared ray 9 with a wavelength of 5.95 Cμm] to 6.161 μm] is applied to the entire exposed area of the resist film 7. The intensity of the infrared reflected light 10 irradiated onto the semiconductor substrate 6 and further reflected by the semiconductor substrate 6 is detected by an infrared intensity detection device 11. The detected output of the infrared intensity detection device 11 before exposure is the infrared reflected light intensity (■). shall be.
そして、シャッタ４を開け、水銀ランプ１より紫外１３
をレンズ２およびレクチル１０を介してレジスト膜７の
露光領域すに照射することにより、露光を行う、この際
にも、露光領域すには赤外線照射装置８により波長５．
９５Ｃμｍ〕〜６，１６〔μｍ］赤外線９を照射し、赤
外線強度検出装置１１により露光中の赤外線反射光１０
の強度を検出する。この赤外線強度検出装置１１の露光
中の検出出力を赤外線反射光強度■とする。Then, open the shutter 4 and use the mercury lamp 1 to
Exposure is carried out by irradiating the exposed area of the resist film 7 through the lens 2 and the reticle 10. Also at this time, the infrared irradiation device 8 is used to irradiate the exposed area with wavelengths of 5.
95Cμm] to 6,16[μm] Infrared light 9 is irradiated, and the infrared reflected light 10 during exposure is detected by the infrared intensity detection device 11.
Detect the intensity of The detection output of this infrared intensity detection device 11 during exposure is assumed to be the infrared reflected light intensity (2).
またこの際、レジス）１１７の露光領域すは紫外ｖＡ３
で露光されることにより、ポリ桂皮酸ビニル分子中から
−ＣＨ＝ＣＨ−結合が消失する（第２図（ａ）、由）参
照）。Also, at this time, the exposure area of the resist) 117 is ultraviolet vA3
By exposing the polyvinyl cinnamate to light, the -CH═CH- bond disappears from the polyvinyl cinnamate molecule (see FIG. 2(a)).
この−ＣＨ＝ＣＨ−結合は赤外線９（波長５．９５〔μ
ｍ〕〜６．１６Ｃμｍ））を吸収する特性がある。した
がって、レジスト膜７の露光が進行することにより膜中
の−ＣＨ＝ＣＨ−結合が減少すると、レジスト膜７に吸
収される赤外線７が減少する。その結果、露光が進行す
るにつれて、赤外線反射光強度Ｉは、露光前の赤外線反
射光強度Ｉ０の比較して、徐々に増加する。したがって
、第３図に示すように、レジスト膜７の露光の進行につ
れて、すなわち露光時間が長くなるにつれて、露光前の
赤外線反射光強度１．に対する露光中の赤外線反射強度
Ｉの比（■。／Ｉ）は小さくなる。This -CH=CH- bond is infrared 9 (wavelength 5.95 [μ
m] to 6.16 Cμm)). Therefore, as the exposure of the resist film 7 progresses and the number of -CH=CH- bonds in the film decreases, the amount of infrared rays 7 absorbed by the resist film 7 decreases. As a result, as the exposure progresses, the infrared reflected light intensity I gradually increases compared to the infrared reflected light intensity I0 before exposure. Therefore, as shown in FIG. 3, as the exposure of the resist film 7 progresses, that is, as the exposure time becomes longer, the infrared reflected light intensity before exposure increases to 1. The ratio (■./I) of the infrared reflection intensity during exposure to the infrared reflection intensity I during exposure becomes small.
そこで、予め決定しておいた最適のレジストパターンが
得られるレジスト膜７の露光状態における■。／■の値
ｋに達したとき（露光時間ｔｉに、シャッタ開閉装置５
によりシャッタ４を閉じるこさにより、レジスト膜４の
露光を終了する。Therefore, in the exposure state of the resist film 7, a predetermined optimum resist pattern is obtained. When the value k of /■ is reached (at the exposure time ti, the shutter opening/closing device 5
By closing the shutter 4, the exposure of the resist film 4 is completed.
このように露光中に、赤外線強度検出装置１１によりレ
ジスト膜７の露光領域すの赤外線反射光強度■を検出し
、露光前の赤外線反射光強度■。During exposure, the infrared light intensity detection device 11 detects the infrared reflected light intensity (2) of the exposed area of the resist film 7, and the infrared reflected light intensity (2) before exposure is detected.
と比較し、露光状態を最適にできるＩ０／Ｉの値に達し
たときに、シャッタ開閉装置５によりシャッタ４を閉じ
、露光を終了することにより、レジスト膜７の露光時間
を制御する。すなわち露光中のレジスト膜７の分子構造
により露光時間を制御するため、レジスト膜７の厚みの
不均一または相違に左右されることなく、常にレジスト
膜７の露光状態を最適にすることができる。その結果、
このレジスト膜７を現像することによって、寸法精度の
高いレジストパターンを得ることができる。The exposure time of the resist film 7 is controlled by closing the shutter 4 using the shutter opening/closing device 5 and ending the exposure when the value of I0/I that can optimize the exposure condition is reached. That is, since the exposure time is controlled by the molecular structure of the resist film 7 during exposure, the exposure state of the resist film 7 can always be optimized regardless of non-uniformity or differences in the thickness of the resist film 7. the result,
By developing this resist film 7, a resist pattern with high dimensional accuracy can be obtained.
なお実施例は、レジスト膜７のレジストとしてネガ型フ
ォトレジストを用いたが、例えばポジ型フォトレジスト
、Ｘ線レジスト、１を子線レジストおよびＤｅｅｐ−Ｕ
Ｖ（遠赤外線）レジスト等を用いることもできる。すな
わちこの発明は、赤外線に対して感光することなく、か
つ露光することにより分子構造の変化する全てのレジス
トを用いることができる。In the example, a negative photoresist was used as the resist for the resist film 7, but for example, a positive photoresist, an X-ray resist, a sub-ray resist and a Deep-U
A V (far infrared) resist or the like may also be used. That is, the present invention can use any resist that is not sensitive to infrared rays and whose molecular structure changes upon exposure.
〔発明の効果〕
この発明の露光装置によれば、レジスト膜に赤外線を照
射する赤外線照射装置と、レジスト膜に照射した赤外線
の反射光の強度を検出する赤外線強度検出装置と、この
赤外線強度検出装置の露光中の検出出力が露光前の検出
出力に対して一定の比に達したときシャッタを閉じるシ
ャッタ開閉装置とを備えることにより、露光に伴う赤外
線の反射光の強度の変化を検出することにより、レジス
ト膜の露光時間を制御する。したがって、レジスト膜の
厚みの不均一または相違に左右されることなく、常にレ
ジスト膜の露光状態を最適化することができる。その結
果、レジスト膜を現像することによって、寸法制御の精
度を向上させたレジストパターンを得ることができる。[Effects of the Invention] According to the exposure apparatus of the present invention, there is provided an infrared irradiation device that irradiates the resist film with infrared rays, an infrared intensity detection device that detects the intensity of reflected light of the infrared rays irradiated on the resist film, and an infrared intensity detection device that detects the intensity of reflected light of the infrared rays irradiated on the resist film. A shutter opening/closing device that closes the shutter when the detection output of the device during exposure reaches a certain ratio to the detection output before exposure, thereby detecting changes in the intensity of reflected infrared light due to exposure. This controls the exposure time of the resist film. Therefore, the exposure state of the resist film can always be optimized regardless of non-uniformity or difference in the thickness of the resist film. As a result, by developing the resist film, a resist pattern with improved precision in dimensional control can be obtained.
第１図はこの発明の一実施例の露光装置を説明するため
の断面図、第２図（ａ）、（ト））は実施例のレジスト
膜７の化学組成を示す図、第３図は露光前の赤外線反射
光強度Ｉ０に対する露光中の赤外線反射光強度Ｉの比（
１，／Ｔ）と露光時間りとの関係を示す図、第４図は従
来の露光装置を説明するための断面図である。
４・・・シャッタ、５・・・シャッタ開閉装置、６・・
・レジスト膜、８・・・赤外線照射装置、１１・・・赤
外線強度検出装置
第
図
第
図
（ａ）
（ｂ）
＼′FIG. 1 is a sectional view for explaining an exposure apparatus according to an embodiment of the present invention, FIGS. 2(a) and (g)) are diagrams showing the chemical composition of a resist film 7 of the embodiment, and FIG. The ratio of the infrared reflected light intensity I during exposure to the infrared reflected light intensity I0 before exposure (
1, /T) and the exposure time, and FIG. 4 is a sectional view for explaining a conventional exposure apparatus. 4...Shutter, 5...Shutter opening/closing device, 6...
・Resist film, 8... Infrared irradiation device, 11... Infrared intensity detection device Figures (a) (b) \'
Claims (1)
記レジスト膜に照射した赤外線の反射光の強度を検出す
る赤外線強度検出装置と、この赤外線強度検出装置の露
光中の検出出力が露光前の検出出力に対して一定の比に
達したときシャッタを閉じるシャッタ開閉装置とを備え
た露光装置。An infrared irradiation device that irradiates the resist film with infrared rays, an infrared intensity detection device that detects the intensity of the reflected infrared light irradiated to the resist film, and a detection output of this infrared intensity detection device during exposure is a detection output before exposure. An exposure apparatus equipped with a shutter opening/closing device that closes the shutter when a certain ratio is reached.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2186056A JPH0472710A (en) | 1990-07-13 | 1990-07-13 | Exposure device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2186056A JPH0472710A (en) | 1990-07-13 | 1990-07-13 | Exposure device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0472710A true JPH0472710A (en) | 1992-03-06 |
Family
ID=16181625
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2186056A Pending JPH0472710A (en) | 1990-07-13 | 1990-07-13 | Exposure device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0472710A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011129912A (en) * | 2009-12-18 | 2011-06-30 | Asml Netherlands Bv | Apparatus and method of lithography |
| CN111273522A (en) * | 2020-04-11 | 2020-06-12 | 苏州源卓光电科技有限公司 | Exposure method and processing method of substrate |
-
1990
- 1990-07-13 JP JP2186056A patent/JPH0472710A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011129912A (en) * | 2009-12-18 | 2011-06-30 | Asml Netherlands Bv | Apparatus and method of lithography |
| CN111273522A (en) * | 2020-04-11 | 2020-06-12 | 苏州源卓光电科技有限公司 | Exposure method and processing method of substrate |
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