JPS62295418A - Processing method for resist - Google Patents
Processing method for resistInfo
- Publication number
- JPS62295418A JPS62295418A JP61138276A JP13827686A JPS62295418A JP S62295418 A JPS62295418 A JP S62295418A JP 61138276 A JP61138276 A JP 61138276A JP 13827686 A JP13827686 A JP 13827686A JP S62295418 A JPS62295418 A JP S62295418A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- photoresist
- heat resistance
- predetermined temperature
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003672 processing method Methods 0.000 title claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 abstract description 17
- 238000010438 heat treatment Methods 0.000 abstract description 15
- 239000004065 semiconductor Substances 0.000 abstract description 14
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052753 mercury Inorganic materials 0.000 abstract description 4
- 230000000630 rising effect Effects 0.000 abstract 3
- 239000010408 film Substances 0.000 description 12
- 239000002344 surface layer Substances 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 238000001723 curing Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
Landscapes
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業−にの利用分野〕
本発明は、半導体ウェハに塗布されたフォトレジス１−
の処理方法に係り、特に、フォ１へ１ノジストの耐熱性
や耐プラズマ性などを向」−させるために加熱処理と紫
外線照射処理とを組合せた処理方法に関するものである
。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention provides a photoresist coated on a semiconductor wafer.
In particular, the present invention relates to a treatment method that combines heat treatment and ultraviolet irradiation treatment in order to improve the heat resistance, plasma resistance, etc. of the photoresist.
半導体素子の製造工程において、フォトレジストパター
ンの形成工程は大きく分けると、レジス１〜塗布、プレ
ベーク、露光、現像、ポストベークの順に行われる。こ
の後、このフオトレジス１−パターンを用いて、イオン
注入、あるいはレジス１〜塗布前にあらかじめ半導体ウ
ェハの表面に形成されたシリコン酸化膜、シリコン窒化
膜、アルミニウム薄膜などのプラズマエツチングなどが
行われる。このとき、イオン注入時にはフォトレジスト
が昇温するので耐熱性が高い方が良く、プラズマエツチ
ング時では、「膜ベリ」が生じない耐久性が要求される
。ところが、近年は半導体素子の高集積化、微細化など
に伴い、フォトレジストがより高分解能のものが使われ
るようになったが、この場合フォトレジス１へはポジ型
であり、一般的にネガ型より耐熱性が悪い。In the manufacturing process of a semiconductor element, the steps of forming a photoresist pattern can be roughly divided into steps of resist 1 - coating, pre-bake, exposure, development, and post-bake. Thereafter, using this photoresist 1 pattern, ion implantation or plasma etching of the silicon oxide film, silicon nitride film, aluminum thin film, etc. previously formed on the surface of the semiconductor wafer before the resist 1 coating is performed. At this time, since the temperature of the photoresist increases during ion implantation, it is better to have high heat resistance, and during plasma etching, durability is required to prevent "film burr" from occurring. However, in recent years, with the increasing integration and miniaturization of semiconductor devices, photoresists with higher resolution have been used, but in this case, photoresist 1 is of a positive type, and is generally a negative type. It has poorer heat resistance than the mold.
′フォトレジストの耐熱性や耐プラズマ性を高め、る方
法としてポストベークにおいて段階的に臥度を上げ、充
分な時間加熱処理する方法や現像後のフォトレジストパ
ターンに紫外線を照射する方法が検討されている。しか
し、前者の方法では十分な耐熱性や耐プラズマ性が得ら
れず、また処理時間が大巾に長くなるという欠点がある
。そして、後者の方法においては、紫外線照射により耐
熱温度は上昇するものの、フオトレジス１へ膜が厚い場
合には、紫外線が内部まで到達せず、フォトレジストの
内部まで十分に耐熱性が向上しなかったり、処理時間が
長いという欠点がある。``As a method to increase the heat resistance and plasma resistance of photoresists, methods of increasing the degree of sleep in stages during post-bake and heat treatment for a sufficient period of time, and methods of irradiating the photoresist pattern with ultraviolet rays after development have been investigated. ing. However, the former method has the disadvantage that sufficient heat resistance and plasma resistance cannot be obtained and the processing time is significantly longer. In the latter method, the heat resistance temperature increases due to ultraviolet irradiation, but if the film is thick on the photoresist 1, the ultraviolet rays will not reach the inside, and the heat resistance will not be sufficiently improved to the inside of the photoresist. , has the disadvantage of long processing time.
そのため最近は、例えば特開昭６０−４５２４７号「フ
ォトレジストの硬化方法及び硬化装置」に開示されてい
るように、「加熱」と「紫外線照射」を組合せる。こと
が提案され、一部では実用化されてそれなりの成果を上
げている。しかしながら、フォトレジストの種類や膜厚
、更には、紫外線の照射強度などに応じて硬化速度や硬
化状態が微妙に異なるものであり、殊に、厚い膜厚のフ
ォトレジストの内部まで十分に耐熱性を向上させるには
、昇温方法を検討する必要があることが判明した。Therefore, recently, "heating" and "ultraviolet irradiation" are combined, as disclosed in, for example, JP-A No. 60-45247, "Photoresist Curing Method and Curing Apparatus." This has been proposed, and in some cases it has been put into practical use with some success. However, the curing speed and state of curing vary slightly depending on the type and thickness of the photoresist, as well as the intensity of UV irradiation. It was found that in order to improve the temperature, it was necessary to consider a method of raising the temperature.
例えば、東京応化工業社製Ｔ Ｓ Ｍ Ｒ−８８００を
塗布して成形したフォトレジストは、通常は１．７μｍ
程度の膜厚で使用するが、２．０μｍ程度の少し厚い膜
を作り、紫外線強度を大きくして高分子化を促進し、そ
れに応じて処理台の昇温速度を大きくし、これによって
照射処理時間を短縮しようとすると次のような問題点が
生じる。即ち、フォトレジストはもともと紫外線の透過
率は良い方ではないので、紫外線強度を大きくして照射
処理時間を短縮すると、膜の表層と内部とで到達する紫
外線強度に大きな差が生じるため高分子化の進行の程度
に差ができ、表層部は耐熱性や耐プラズマエツチング性
が向上するが、内部は十分には向上しない。For example, a photoresist coated with Tokyo Ohka Kogyo Co., Ltd.'s T S M R-8800 and molded usually has a thickness of 1.7 μm.
A slightly thicker film of about 2.0 μm is used, and the intensity of ultraviolet rays is increased to promote polymerization, and the temperature rise rate of the processing table is increased accordingly. When trying to shorten the time, the following problems arise. In other words, since photoresist does not originally have good UV transmittance, increasing the UV intensity and shortening the irradiation treatment time will result in a large difference in the UV intensity reaching the surface layer and the inside of the film, so polymerization There is a difference in the degree of progress of etching, and the heat resistance and plasma etching resistance of the surface layer improve, but the improvement does not improve sufficiently inside.
このように、従来のレジスト処理方法においては、耐熱
性や耐プラズマ性の若干の改良を達成することができた
としても、殊に、フォトレジスト膜が厚い場合はその内
部において十分には耐熱性が向上せず、結果としてフォ
トレジストの耐熱性が低いという問題点が残っている。In this way, with conventional resist processing methods, even if some improvement in heat resistance and plasma resistance can be achieved, especially when the photoresist film is thick, the internal heat resistance is insufficient. The problem remains that the heat resistance of the photoresist is low as a result.
そして、耐熱性を十分に向上させようとすると、処理時
間が非常に長くなるという問題が派生する。即ち、レジ
スト処理全体を有機的かつ効果的に遂行することができ
ないという問題点があった。If an attempt is made to sufficiently improve heat resistance, a problem arises in that the processing time becomes extremely long. That is, there is a problem in that the entire resist process cannot be performed organically and effectively.
この発明は、かかる事情に鑑みて、紫外線照射に加熱処
理を有機的に組み合わせ、フォトレジスト膜が厚い場合
でもその内部まで十分に耐熱性が向上し、生産性の優れ
たレジスト処理方法を提供することを目的とするもので
ある。In view of the above circumstances, the present invention provides a resist processing method that organically combines ultraviolet irradiation with heat treatment, sufficiently improves heat resistance to the inside of the photoresist film even if it is thick, and has excellent productivity. The purpose is to
そこで本発明では、沢庵制御手段を備えた処理台に載置
されたウェハに塗布されたフォトレジストに紫外線を照
射して該フォトレジストのフロ一温度を上昇させ、その
耐熱性や耐プラズマ性などを向上させるレジスト処理方
法において、該処理台を第１の所定温度まで第１の等速
昇温速度で昇温する工程と、
該第１の所定温度に到達した後、該第１の等速昇温速度
より遅い第２の等速昇温速度で第２の所定温度まで昇温
する工程と、
を含むことにより、前述の目的を達成するものである。Therefore, in the present invention, ultraviolet rays are irradiated onto the photoresist coated on a wafer placed on a processing table equipped with a Takuan control means to increase the flow temperature of the photoresist, thereby improving its heat resistance and plasma resistance. In a resist processing method for improving the temperature, the processing table is heated to a first predetermined temperature at a first constant rate of temperature increase; The above-mentioned object is achieved by including the steps of: raising the temperature to a second predetermined temperature at a second uniform temperature increase rate that is slower than the temperature increase rate.
この発明においては、強力な紫外線照射によるレジスト
処理に、加熱を有機的に組み合わせることにより、フォ
トレジスト膜が厚い場合でもその内部まで効果的に耐熱
性を向上させることができる。更に詳細に説明すると、
この発明は、第１段階において、紫外線照射によりフォ
トレジストの表層部のフロ一温度が上昇するのに合わせ
て、フォトレジスト温度を第１の所定温度まで第１の等
速昇温速度で昇温させながら照射処理を行う。ここで、
紫外線照射の経過につれてフロ一温度は上昇してゆくが
、表層部と内部では紫外線照射の程度に差があるので、
フロ一温度の上昇速度は表層部と内部では異なる。つま
り、表層部のフロ一温度上昇速度は大きいが、これに対
応する大きい速度で昇温させる第１段階の処理によって
表Ｘ’１部の耐熱性や耐プラズマエツチング性は効率良
く向−１ニする。しかし、もし、このままの速度で昇ｉ
’ｌ＋ｉｌを続けて照射時間差短縮すると、前述のとお
り、表層部の高分子化が著しく進み、紫外線が内部まで
透過しにくいため、内部の耐熱性は十分には向上しない
が、本発明では、第２段階において、第１の所定温度に
到達した後、第１の等速昇温速度より遅い第２の等速昇
温速度で第２の所定温度、即ち最終処理温度まで昇温す
る。従って、紫外線がフォトレジスト内髪良く浸透し、
内部のフロ一温度の」１昇に伴って処理温度を高くする
ことがｎ（能なために、フオトレジス１へ膜が厚い場合
でもその内部の耐熱性が十分に向」ニする。In the present invention, by organically combining resist treatment with strong ultraviolet irradiation and heating, heat resistance can be effectively improved to the inside even if the photoresist film is thick. To explain in more detail,
In the first step, the temperature of the photoresist is raised to a first predetermined temperature at a first constant heating rate as the flow temperature of the surface layer of the photoresist increases due to ultraviolet irradiation. Perform the irradiation treatment while here,
As the UV irradiation progresses, the temperature of the fluid increases, but there is a difference in the degree of UV irradiation between the surface layer and the inside.
The rate of increase in temperature of the fluid differs between the surface layer and the interior. In other words, although the flow temperature rise rate in the surface layer is high, the heat resistance and plasma etching resistance of Table do. However, if it continues to rise at this rate,
If 'l + il is continued and the irradiation time difference is shortened, as mentioned above, the polymerization of the surface layer will significantly progress and it will be difficult for ultraviolet rays to penetrate inside, so the internal heat resistance will not improve sufficiently. In two stages, after reaching the first predetermined temperature, the temperature is raised to the second predetermined temperature, that is, the final treatment temperature, at a second constant temperature increase rate that is slower than the first constant temperature increase rate. Therefore, ultraviolet rays penetrate well into the photoresist hair,
Since it is possible to increase the processing temperature as the internal flow temperature increases by 1, the internal heat resistance of the photoresist 1 is sufficiently improved even if the film is thick.
第１図は、この発明によるレジス１へ処理方法を実施す
るための装置の一例を示す。FIG. 1 shows an example of an apparatus for carrying out a method of treating a resist 1 according to the present invention.
パターン化されたフォトレジス１−４が半導体ウェハ５
の上に形成されており、半導体ウェハ５はウェハ処理台
６に載置される。ウェハ処理台６は、ヒータリード線９
より通電することによりヒータ１０で加熱され、あるい
は冷却孔１１ に冷却水を流すことによって冷却される
。この加熱および冷却機構により半導体ウェハ５の温度
制御が行われる。温度の検出は、温度センサー１２によ
って行われ、この温度センサー１２の出力が１例えば、
ヒータ１０への供給電力の制御信号として使用される。A patterned photoresist 1-4 is placed on a semiconductor wafer 5.
The semiconductor wafer 5 is placed on a wafer processing table 6. The wafer processing table 6 has a heater lead wire 9
It is heated by the heater 10 by energizing it, or cooled by flowing cooling water through the cooling holes 11. The temperature of the semiconductor wafer 5 is controlled by this heating and cooling mechanism. Temperature detection is performed by a temperature sensor 12, and the output of this temperature sensor 12 is 1, for example,
It is used as a control signal for power supplied to the heater 10.
また、ウェハ処理台６には、真空吸着孔７が付加されて
おり、真空ポンプによって連通孔８を通して真空引きす
ることにより、半導体ウェハ５をウェハ処理台６−にに
密着して固定する機能をも有する。照射部は、高圧水銀
灯１、凹面ミラー２、開閉可能なシャッター３から構成
されており、高圧水銀灯１から発光された紫外線を含む
放射光は、凹面ミラー２などにより反射されて、半導体
ウェハ５に塗布されたフォトレジスｌ−４−１−に照射
される。The wafer processing table 6 is also provided with a vacuum suction hole 7, which has the function of fixing the semiconductor wafer 5 in close contact with the wafer processing table 6- by drawing a vacuum through the communication hole 8 with a vacuum pump. It also has The irradiation unit is composed of a high-pressure mercury lamp 1, a concave mirror 2, and a shutter 3 that can be opened and closed. The radiation including ultraviolet rays emitted from the high-pressure mercury lamp 1 is reflected by the concave mirror 2, etc., and is directed onto the semiconductor wafer 5. The applied photoresist l-4-1- is irradiated.
次に、このレジス１へ処理装置を用いてレジスト処理す
る方法について説明する。フォトレジス１へ４が塗布さ
れた半導体ウェハ５を、予めフォ１ヘレ−７＝
シスト４の耐熱温度であるフロ一温度より少し高く加熱
されたウェハ処理台６」二に載置する。そして、真空吸
着孔７を真空引きすることにより、半導体ウェハ５をウ
ェハ処理台６上に密着させる。Next, a method of performing resist processing on this resist 1 using a processing device will be described. The semiconductor wafer 5 on which the photoresist 1 has been coated with 4 is placed on a wafer processing table 6 which has been heated in advance to a temperature slightly higher than the temperature of the wafer 1 which is the heat-resistant temperature of the photoresist 4. Then, by evacuating the vacuum suction hole 7, the semiconductor wafer 5 is brought into close contact with the wafer processing table 6.
この状態でシャッター３を開き、フ第１ヘレジス１へ４
に高圧水銀灯１から発光される紫外線を含む光を照射す
る。この照射によりフォトＩノジスト４のフロ一温度が
上昇するが、これに合わせてウェハ処理台６のヒータ電
力を制御し、フォト１ノジスｈ温度を常にフロ一温度よ
り少し高い状態になるようにウェハ処理台６髪一定の昇
温速度で第１の所定温度まで上昇させる。しかる後、例
えば、ヒータ１０への供給電力をや５弱めるか、もしく
は冷却を強めるかして昇温速度を抑制した第２の等速昇
温速度で第２の所定温度まで昇温する。制御精度として
はヒータ１０への供給電力を下げた方が実行しやすい。In this state, open the shutter 3 and go to the first heregis 1.
is irradiated with light containing ultraviolet light emitted from a high-pressure mercury lamp 1. This irradiation causes the temperature of the photo nozzle 4 to rise, but the heater power of the wafer processing table 6 is controlled accordingly to keep the photo nozzle temperature slightly higher than the wafer temperature. The temperature of the processing table 6 is raised to a first predetermined temperature at a constant heating rate. Thereafter, the temperature is raised to a second predetermined temperature at a second constant temperature increase rate in which the temperature increase rate is suppressed by, for example, weakening the power supplied to the heater 10 by 5% or increasing cooling. In terms of control accuracy, it is easier to execute by lowering the power supplied to the heater 10.
処理が終了すると加熱を停【１−シ、シャッター３を閉
じて放射光照射釦停止させる。When the process is completed, the heating is stopped [1-sh], the shutter 3 is closed, and the synchrotron radiation irradiation button is stopped.
そして、冷却孔１１に冷却水を流して半導体ウェハ５を
所定の温度まで冷却し、真空吸着を解除し＝８−
て半導体ウェハ５をウェハ処理台６から取り去る。Then, cooling water is allowed to flow through the cooling holes 11 to cool the semiconductor wafer 5 to a predetermined temperature, the vacuum suction is released, and the semiconductor wafer 5 is removed from the wafer processing table 6.
処理が完了すると以−Ｌの操作を繰り返して順次レジス
ト処理を実施すれば良い。When the process is completed, the following operations may be repeated to sequentially perform the registration process.
以下に更に具体的に説明する。This will be explained in more detail below.
前述の装置を使用して、東京応化工業社製の１゛Ｓ Ｍ
Ｒ−８８００を塗布して成形した厚さが２．０μｍの
フォトレジス１へを第２図に示すタイムチャートに基す
いて紫外線の照射処理を行った。即ち、先ず、１００℃
に保持した処理台にウェハを載置し、０．７８℃／ｓｅ
ｃの一定の昇温速度で１７０℃まで昇温し、しかる後、
０．２５℃／ｓｅｃの一定の昇温速度で２２０℃まで昇
温した。この結果、処理前は１３０℃であったフォトレ
ジス１への耐熱温度は３００℃まで向」ニした。従って
、イオン注入やプラズマエツチングに対する耐久性が著
しく向］二するので、線１１の小さいパターンを製作す
るのに好適である。因に、従来は、耐熱温度を３００℃
まで向」ニさせた例は殆どなく、もしこの温度まで耐熱
性を向−１ニさせるとしても非常に長時間処理する必要
があるとされていた。Using the above-mentioned equipment, 1゛SM manufactured by Tokyo Ohka Kogyo Co., Ltd.
A photoresist 1 coated with R-8800 and molded and having a thickness of 2.0 μm was irradiated with ultraviolet rays based on the time chart shown in FIG. That is, first, 100℃
The wafer was placed on a processing table maintained at 0.78°C/se.
The temperature was raised to 170 °C at a constant temperature increase rate of c, and then,
The temperature was raised to 220°C at a constant temperature increase rate of 0.25°C/sec. As a result, the heat resistance temperature of the photoresist 1, which was 130°C before treatment, increased to 300°C. Therefore, the durability against ion implantation and plasma etching is significantly improved, making it suitable for manufacturing a pattern with small lines 11. Incidentally, conventionally, the heat-resistant temperature was 300℃.
There are almost no examples of improving heat resistance to this temperature, and even if heat resistance were to be improved to -1, it would be necessary to process for a very long time.
以上説明したように、温度制御手段を備えた処理台に載
置されたウェハに塗布されたフォトレジストに紫外線を
照射して該フォトレジストのフロ一温度を上昇させ、そ
の耐熱性や耐プラズマ性などを向上させるレジスト処理
方法において、処理台を第１の所定温度まで第１の等速
昇温速度で昇温する工程と、第１の所定温度に到達した
後、第１の等速昇温速度より遅い第２の等速昇温速度で
第２の所定温度まで昇温する工程とを含むようにしたの
で、フォトレジスト膜が厚い場合でもその内部まで十分
に耐熱性を向上させるこが可能であり、短時間の加熱と
紫外線照射で耐熱性と耐プラズマ性をともに向上させる
ことができ、生産性が著しく向上する。As explained above, the photoresist coated on a wafer placed on a processing table equipped with a temperature control means is irradiated with ultraviolet rays to increase the flow temperature of the photoresist, thereby improving its heat resistance and plasma resistance. In the resist processing method for improving the temperature, the processing table is heated to a first predetermined temperature at a first constant temperature increase rate, and after reaching the first predetermined temperature, a first constant temperature increase is performed. Since the method includes the step of raising the temperature to the second predetermined temperature at a second uniform heating rate that is slower than the heating rate, even if the photoresist film is thick, it is possible to sufficiently improve the heat resistance to the inside of the photoresist film. Therefore, both heat resistance and plasma resistance can be improved by short-time heating and ultraviolet irradiation, and productivity is significantly improved.
第１図はこの発明によるレジスト処理方法を実施・する
ための装置の一例の説明図、第２図は処理方法のタイム
チャートである。FIG. 1 is an explanatory diagram of an example of an apparatus for carrying out the resist processing method according to the present invention, and FIG. 2 is a time chart of the processing method.
Claims (1)
されたフォトレジストに紫外線を照射して該フォトレジ
ストのフロー温度を上昇させ、その耐熱性や耐プラズマ
性などを向上させるレジスト処理方法において、 該処理台を第１の所定温度まで第１の等速昇温速度で昇
温する工程と、 該第１の所定温度に到達した後、該第１の等速昇温速度
より遅い第２の等速昇温速度で第２の所定温度まで昇温
する工程と、 を含むことを特徴とするレジスト処理方法。[Claims] The photoresist coated on a wafer placed on a processing table equipped with temperature control means is irradiated with ultraviolet rays to increase the flow temperature of the photoresist, thereby increasing its heat resistance, plasma resistance, etc. In a resist processing method for improving the temperature, the processing table is heated to a first predetermined temperature at a first constant temperature increase rate, and after reaching the first predetermined temperature, the temperature is A resist processing method comprising the steps of: raising the temperature to a second predetermined temperature at a second constant temperature increase rate that is slower than the temperature increase rate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61138276A JPS62295418A (en) | 1986-06-16 | 1986-06-16 | Processing method for resist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61138276A JPS62295418A (en) | 1986-06-16 | 1986-06-16 | Processing method for resist |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62295418A true JPS62295418A (en) | 1987-12-22 |
| JPH0231857B2 JPH0231857B2 (en) | 1990-07-17 |
Family
ID=15218130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61138276A Granted JPS62295418A (en) | 1986-06-16 | 1986-06-16 | Processing method for resist |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62295418A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003527738A (en) * | 1998-07-13 | 2003-09-16 | エーケーティー株式会社 | Heating of the substrate support in the substrate handling chamber |
| WO2004109779A1 (en) * | 2003-06-06 | 2004-12-16 | Tokyo Electron Limited | Method for improving surface roughness of processed film of substrate and apparatus for processing substrate |
-
1986
- 1986-06-16 JP JP61138276A patent/JPS62295418A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003527738A (en) * | 1998-07-13 | 2003-09-16 | エーケーティー株式会社 | Heating of the substrate support in the substrate handling chamber |
| WO2004109779A1 (en) * | 2003-06-06 | 2004-12-16 | Tokyo Electron Limited | Method for improving surface roughness of processed film of substrate and apparatus for processing substrate |
| US7875420B2 (en) | 2003-06-06 | 2011-01-25 | Tokyo Electron Limited | Method for improving surface roughness of processed film of substrate and apparatus for processing substrate |
| US8646403B2 (en) | 2003-06-06 | 2014-02-11 | Tokyo Electron Limited | Method for improving surface roughness of processed film of substrate and apparatus for processing substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0231857B2 (en) | 1990-07-17 |
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|---|---|---|---|
| EXPY | Cancellation because of completion of term |