JPH023495B2 - - Google Patents
Info
- Publication number
- JPH023495B2 JPH023495B2 JP56027769A JP2776981A JPH023495B2 JP H023495 B2 JPH023495 B2 JP H023495B2 JP 56027769 A JP56027769 A JP 56027769A JP 2776981 A JP2776981 A JP 2776981A JP H023495 B2 JPH023495 B2 JP H023495B2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- electron beam
- negative resist
- post
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- 238000010894 electron beam technology Methods 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 14
- 230000000694 effects Effects 0.000 claims description 12
- 238000006116 polymerization reaction Methods 0.000 claims description 10
- 230000001590 oxidative effect Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 229920002454 poly(glycidyl methacrylate) polymer Polymers 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229920001577 copolymer Chemical compound 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- PYGSKMBEVAICCR-UHFFFAOYSA-N hexa-1,5-diene Chemical group C=CCCC=C PYGSKMBEVAICCR-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Electron Beam Exposure (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
Description
【発明の詳細な説明】
本発明は電子ビーム露光を施こしたネガ型レジ
ストの処理方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for processing a negative resist subjected to electron beam exposure.
PGMA（ポリ・グリシジル・メタアクリレー
ト）やPDOP（ポリ・ジアリル・オルソ・フタレ
ート）のような電子ビーム露光に用いられるネガ
型レジストは、電子ビーム露光を施こした後、真
空中または窒素（N2）のような非酸化性雰囲気
中において時間経過にともない架橋反応が進行す
る。この現象はネガ型レジストの後重合効果と呼
ばれている。 Negative resists used for electron beam exposure, such as PGMA (poly glycidyl methacrylate) and PDOP (poly diallyl ortho phthalate), are exposed in vacuum or in nitrogen ( N2) after electron beam exposure. ) The crosslinking reaction progresses over time in a non-oxidizing atmosphere such as This phenomenon is called the post-polymerization effect of negative resists.
被処理試料表面にネガ型レジスト膜を形成し、
これに電子ビームを照射して所望のパターンを描
画する場合、ネガ型レジスト膜の残膜率は露光後
の時間経過につれて増大する。そのため所定の残
膜率を得るためには、電子ビーム露光終了後非酸
化性雰囲気中或いは真空中において試料を長時間
保管しなければならなかつた。 A negative resist film is formed on the surface of the sample to be processed,
When a desired pattern is drawn by irradiating this with an electron beam, the residual film rate of the negative resist film increases as time passes after exposure. Therefore, in order to obtain a predetermined residual film rate, it is necessary to store the sample in a non-oxidizing atmosphere or in a vacuum for a long time after the electron beam exposure is completed.
上記事情により電子ビーム露光によりパターン
を描画するには長時間を要し、また装置の使用効
率が低下するという問題があつた。 Due to the above-mentioned circumstances, there has been a problem that it takes a long time to draw a pattern by electron beam exposure and that the efficiency of use of the apparatus is reduced.
本発明の目的は後重合効果を促進して短時間で
所望の残膜率に到達し得るネガ型レジスト膜の処
理方法を提供することにある。 An object of the present invention is to provide a method for processing a negative resist film that can accelerate the post-polymerization effect and reach a desired residual film rate in a short time.
本発明の特徴は試料表面に塗布された電子ビー
ム露光に用いられるネガ型レジスト膜に電子ビー
ム露光を行い、次いで大気にさらすことなく非酸
化性雰囲気中または真空中にて加熱処理を施こす
ことにより後重合効果を促進することにある。 The feature of the present invention is that a negative resist film used for electron beam exposure applied to the sample surface is exposed to electron beam, and then heat treatment is performed in a non-oxidizing atmosphere or in a vacuum without exposing it to the atmosphere. The aim is to promote the post-polymerization effect.
以下本発明の一実施例を図面により説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１図は前記ネガ型レジストPDOPに約1.7×
10-5［Ｃ／cm2］の露光量を与えたときの後重合効
果を示す図で、横軸は露光後の経過時間（以下キ
ユアリング時間と称する）ｔ［分］、縦軸は残膜率
［％］、直線Ａは露光後の試料温度（以下キユアリ
ング温度と称する）Ｔが20［℃］の場合、Ｂは50
［℃］の場合を示す。 Figure 1 shows the negative resist PDOP approximately 1.7×
This is a diagram showing the post-polymerization effect when an exposure amount of 10 -5 [C/cm 2 ] is applied. The horizontal axis is the elapsed time after exposure (hereinafter referred to as curing time) t [minutes], and the vertical axis is the remaining film. When the sample temperature after exposure (hereinafter referred to as curing temperature) T is 20 [℃], the line B is 50
The case of [℃] is shown.
同図に見られる如く残膜率が70％に達するのに
要するキユアリング時間ｔは、Ｔ＝20［℃］のと
きは凡そ30［分］を要するのに対し、Ｔ＝50［℃］
のときは約10［分］でよい。このように温度を上
げれば後重合効果が促進され、キユアリング時間
を短縮できる。なおこの理由は後重合効果は一種
の化学反応であるから、反応温度が高ければ反応
速度も速くなるためと考えられる。 As can be seen in the figure, the curing time t required for the residual film rate to reach 70% is approximately 30 [minutes] when T = 20 [°C], but when T = 50 [°C]
Approximately 10 minutes is sufficient. By raising the temperature in this way, the post-polymerization effect is promoted and the curing time can be shortened. The reason for this is thought to be that since the postpolymerization effect is a type of chemical reaction, the higher the reaction temperature, the faster the reaction rate.
本実施例ではこの観点に基き露光システムを次
のように構成した。即ち第２図に示すように露光
装置１の試料室２に予備室３及び加熱室４を開閉
弁５，５′を介して接続し、更に加熱室４の試料
取出口側にも開閉弁５″を設けた。このように構
成した露光システムの試料室２内で、先ず試料６
表面に塗布されたPDOPのようなネガ型レジスト
膜（図示せず）に電子ビーム露光を行なう。次い
で開閉弁５をあけて試料６を予め真空状態にされ
た予備室３に移し、開閉弁５を閉じる。次いで予
備室３内に非酸化性ガス、例えば窒素を流入させ
て室内を所定圧力とした後、開閉弁５′をあけて
試料６を加熱室４に移し、再び開閉弁５′を閉じ
る。加熱室４には所定の温度、例えば50℃に加熱
した窒素N2ガスのような高温の非酸化性ガスを
流す等の加熱手段を設けておく。これにより試料
６表面のネガ型レジスト膜は加熱されるので、上
述のように後重合効果が促進され短時間で所望の
残膜率に到達する。なお加熱温度は50［℃］に限
定されるものでなく、種々選択して良い。 In this embodiment, the exposure system was configured as follows based on this viewpoint. That is, as shown in FIG. 2, the preliminary chamber 3 and the heating chamber 4 are connected to the sample chamber 2 of the exposure apparatus 1 via on-off valves 5 and 5', and an on-off valve 5 is also connected to the sample outlet side of the heating chamber 4. In the sample chamber 2 of the exposure system configured in this way, the sample 6 is
Electron beam exposure is performed on a negative resist film (not shown) such as PDOP applied to the surface. Next, the on-off valve 5 is opened, the sample 6 is transferred to the preliminary chamber 3 which has been evacuated in advance, and the on-off valve 5 is closed. Next, a non-oxidizing gas such as nitrogen is introduced into the preliminary chamber 3 to bring the pressure inside the chamber to a predetermined pressure, and then the on-off valve 5' is opened to transfer the sample 6 to the heating chamber 4, and the on-off valve 5' is closed again. The heating chamber 4 is provided with heating means for flowing a high temperature non-oxidizing gas such as nitrogen N 2 gas heated to a predetermined temperature, for example 50°C. As a result, the negative resist film on the surface of the sample 6 is heated, so that the post-polymerization effect is promoted as described above, and the desired residual film ratio is reached in a short time. Note that the heating temperature is not limited to 50 [° C.], and may be selected from various values.
試料の加熱手段として第３図に示すように加熱
室４内にヒータのような加熱器７を設けてもよ
く、加熱器７からの熱電導により試料６表面のネ
ガレジスト膜を加熱する方法によつても本発明は
実施できる。この場合には加熱室４内はN2のよ
うな非酸化性ガス雰囲気としても、真空にしても
よい。真空にする場合には試料移送時に予備室３
も真空状態とする。 As a means for heating the sample, a heater 7 such as a heater may be provided in the heating chamber 4 as shown in FIG. However, the present invention can still be practiced. In this case, the inside of the heating chamber 4 may be in a non-oxidizing gas atmosphere such as N 2 or may be in a vacuum. If vacuuming is required, use the preliminary chamber 3 during sample transfer.
is also in a vacuum state.
以上の如く所定時間加熱処理を行なつた後、開
閉弁５″をあけて試料６を取り出し、現像処理工
程等の以後の処理工程に送る。 After the heat treatment has been carried out for a predetermined period of time as described above, the on-off valve 5'' is opened and the sample 6 is taken out and sent to subsequent processing steps such as the development processing step.
本発明を実施するに当り留意すべき点は、露光
した後上記加熱処理（キユアリング）が終了する
迄試料を非酸化性雰囲気または真空中に保持して
おくことである。電子ビーム露光を施こしたネガ
型レジストを例えば大気に一瞬でもさらせば、も
はや後重合効果は期待できず、従つて残膜率を高
めることは不可能となる。 When carrying out the present invention, it is important to keep the sample in a non-oxidizing atmosphere or in vacuum after exposure until the above heat treatment (curing) is completed. If a negative resist subjected to electron beam exposure is exposed to the atmosphere even momentarily, no post-polymerization effect can be expected, and therefore it becomes impossible to increase the residual film rate.
上記説明における非酸化性雰囲気としてはN2
が実用上最も便利であるが、二酸化炭素（CO2）、
水素（H2）、メタンガス（CH4）あるいはアルゴ
ン（Ar）、ヘリウム（He）等の希ガス等であつ
てもよく、更にこれらの混合ガスであつてもよく
N2に限定されるものではない。 The non-oxidizing atmosphere in the above explanation is N 2
is the most convenient in practice, but carbon dioxide (CO 2 ),
It may be hydrogen (H 2 ), methane gas (CH 4 ), or a rare gas such as argon (Ar) or helium (He), or it may be a mixture of these gases.
It is not limited to N2 .
また本発明はPDOPに限らず、PGMA（ポリ・
グリシジル・メタ・アクリレート）やＰ（GMA
−Co−EA）［グリシジル・メタ・アクリレート
とエチル・アクリレートの共重合体］等ネガ型レ
ジスト全般の後重合効果促進に使用し得る。 Furthermore, the present invention is not limited to PDOP, but also applies to PGMA (poly
glycidyl meth acrylate) and P (GMA
-Co-EA) [Copolymer of glycidyl meth acrylate and ethyl acrylate] It can be used to promote the post-polymerization effect of general negative resists.
以上説明した如く本発明によれば電子ビーム露
光を施こしたネガ型レジストの後重合効果を促進
できるので、短時間で高い残膜率が得られる。従
つて作業時間が短縮され、装置の使用効率が向上
する。 As explained above, according to the present invention, it is possible to promote the post-polymerization effect of a negative resist subjected to electron beam exposure, so that a high residual film rate can be obtained in a short time. Therefore, working time is shortened and equipment usage efficiency is improved.
第１図は本発明の一実施例の効果を示す図、第
２図及び第３図は上記一実施例に用いた電子ビー
ム露光システムの要部を示す構成図である。
図において、１は電子ビーム露光装置、４は加
熱室、６は試料、７は加熱器を示す。
FIG. 1 is a diagram showing the effects of an embodiment of the present invention, and FIGS. 2 and 3 are configuration diagrams showing essential parts of an electron beam exposure system used in the above embodiment. In the figure, 1 is an electron beam exposure device, 4 is a heating chamber, 6 is a sample, and 7 is a heater.
Claims (1)
子ビーム露光を行い、次いで該レジストを大気に
さらすことなく、非酸化性雰囲気中または真空中
にて加熱処理を施し、該レジストの後重合効果を
促進し、所望の残膜率に高めた後、現像処理工程
を施すことを特徴とするネガ型レジストの処理方
法。1. Electron beam exposure is applied to the negative resist film applied to the sample surface, and then heat treatment is performed in a non-oxidizing atmosphere or in vacuum without exposing the resist to the atmosphere to remove the post-polymerization effect of the resist. 1. A method for processing a negative resist, the method comprising: increasing the residual film rate to a desired level, and then performing a development process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2776981A JPS57142637A (en) | 1981-02-27 | 1981-02-27 | Treatment of negative type resist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2776981A JPS57142637A (en) | 1981-02-27 | 1981-02-27 | Treatment of negative type resist |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57142637A JPS57142637A (en) | 1982-09-03 |
| JPH023495B2 true JPH023495B2 (en) | 1990-01-23 |
Family
ID=12230184
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2776981A Granted JPS57142637A (en) | 1981-02-27 | 1981-02-27 | Treatment of negative type resist |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57142637A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS589141A (en) * | 1981-07-10 | 1983-01-19 | Nippon Telegr & Teleph Corp <Ntt> | Enhancing method for sensitivity of radiation sensitive negative type resist |
| JP2538052B2 (en) * | 1989-04-28 | 1996-09-25 | 松下電器産業株式会社 | Resist polymerization accelerated heating method and apparatus |
| US5962196A (en) * | 1991-04-08 | 1999-10-05 | Intel Corporation | Deep ultraviolet light photoresist processing |
| JP2682437B2 (en) * | 1994-04-22 | 1997-11-26 | 日本電気株式会社 | Exposure method and apparatus |
| JP2002343708A (en) * | 2001-05-21 | 2002-11-29 | Toshiba Corp | Substrate processing system and heat treating method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5691425A (en) * | 1979-12-25 | 1981-07-24 | Seiko Epson Corp | Resist heat treatment device |
| JPS5726170A (en) * | 1980-07-25 | 1982-02-12 | Nippon Telegr & Teleph Corp <Ntt> | Formation of al or al alloy pattern |
| JPS5727030A (en) * | 1980-07-25 | 1982-02-13 | Nippon Telegr & Teleph Corp <Ntt> | Formation of resist pattern |
-
1981
- 1981-02-27 JP JP2776981A patent/JPS57142637A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5691425A (en) * | 1979-12-25 | 1981-07-24 | Seiko Epson Corp | Resist heat treatment device |
| JPS5726170A (en) * | 1980-07-25 | 1982-02-12 | Nippon Telegr & Teleph Corp <Ntt> | Formation of al or al alloy pattern |
| JPS5727030A (en) * | 1980-07-25 | 1982-02-13 | Nippon Telegr & Teleph Corp <Ntt> | Formation of resist pattern |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57142637A (en) | 1982-09-03 |
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