JPH03212938A - Forming method of silicon nitride film - Google Patents

Forming method of silicon nitride film

Info

Publication number
JPH03212938A
JPH03212938A JP872990A JP872990A JPH03212938A JP H03212938 A JPH03212938 A JP H03212938A JP 872990 A JP872990 A JP 872990A JP 872990 A JP872990 A JP 872990A JP H03212938 A JPH03212938 A JP H03212938A
Authority
JP
Japan
Prior art keywords
film
si
nitrogen
sio
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP872990A
Inventor
Seiichi Iwamatsu
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP872990A priority Critical patent/JPH03212938A/en
Publication of JPH03212938A publication Critical patent/JPH03212938A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To make it possible to form an Si3N4 film while heating an Si substrate or an Si film (including an SiO2 film) at a temperature of 80°C or below, by providing a plasma generator and by applying a nitrogen radical onto the surface of the Si substrate or the Si film (including the SiO2 film).
CONSTITUTION: A nitrogen gas 6 sent by a tube 4 is excited by a plasma generator 5 while a wafer 3 whereon an Si substrate or an Si film and an SiO2 film are formed is heated to about 600°C by a furnace 1, and thereby a nitrogen plasma is generated. When an active nitrogen radical in the nitrogen plasma is applied onto the surface of the wafer 3, subsequently, the surface of the Si substrate or the Si film or the SiO2 film can be turned into an Si3N4 film at a speed of about 100Å/min. As for an introduced gas, an ammonia gas may be substituted for the nitrogen gas, and the mixture of the nitrogen gas and a hydrogen gas may be used as well. In this case, a hydrogen radical is also produced simultaneously with the nitrogen radical and a still lower temperature and film formation at a still higher speed can be attained. According to this constitution, generation of a strain in a heating treatment, which accompanies enlargement of the diameter of an Si wafer and others, can be held down.
COPYRIGHT: (C)1991,JPO&Japio
JP872990A 1990-01-18 1990-01-18 Forming method of silicon nitride film Pending JPH03212938A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP872990A JPH03212938A (en) 1990-01-18 1990-01-18 Forming method of silicon nitride film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP872990A JPH03212938A (en) 1990-01-18 1990-01-18 Forming method of silicon nitride film

Publications (1)

Publication Number Publication Date
JPH03212938A true JPH03212938A (en) 1991-09-18

Family

ID=11701042

Family Applications (1)

Application Number Title Priority Date Filing Date
JP872990A Pending JPH03212938A (en) 1990-01-18 1990-01-18 Forming method of silicon nitride film

Country Status (1)

Country Link
JP (1) JPH03212938A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5376223A (en) * 1992-01-09 1994-12-27 Varian Associates, Inc. Plasma etch process
WO1999064645A1 (en) * 1998-06-12 1999-12-16 Applied Materials, Inc. A method and apparatus for the formation of dielectric layers
WO2002054474A1 (en) * 2000-12-28 2002-07-11 Tadahiro Ohmi Dielectric film and method of forming it, semiconductor device, nonvolatile semiconductor memory device, and production method for semiconductor device
JP2002543584A (en) * 1999-04-22 2002-12-17 アプライド マテリアルズ インコーポレイテッド Apparatus and method for exposing a substrate to a plasma radical
WO2003015151A1 (en) * 2001-08-02 2003-02-20 Tokyo Electron Limited Base material treating method and electron device-use material
US8361845B2 (en) 2005-06-30 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5376223A (en) * 1992-01-09 1994-12-27 Varian Associates, Inc. Plasma etch process
WO1999064645A1 (en) * 1998-06-12 1999-12-16 Applied Materials, Inc. A method and apparatus for the formation of dielectric layers
JP2002543584A (en) * 1999-04-22 2002-12-17 アプライド マテリアルズ インコーポレイテッド Apparatus and method for exposing a substrate to a plasma radical
WO2002054474A1 (en) * 2000-12-28 2002-07-11 Tadahiro Ohmi Dielectric film and method of forming it, semiconductor device, nonvolatile semiconductor memory device, and production method for semiconductor device
US7439121B2 (en) 2000-12-28 2008-10-21 Tadahiro Ohmi Dielectric film and method of forming it, semiconductor device, non-volatile semiconductor memory device, and production method for semiconductor device
US7718484B2 (en) 2000-12-28 2010-05-18 Foundation For Advancement Of International Science Method of forming a dielectic film that contains silicon, oxygen and nitrogen and method of fabricating a semiconductor device that uses such a dielectric film
WO2003015151A1 (en) * 2001-08-02 2003-02-20 Tokyo Electron Limited Base material treating method and electron device-use material
US7250375B2 (en) 2001-08-02 2007-07-31 Tokyo Electron Limited Substrate processing method and material for electronic device
US8361845B2 (en) 2005-06-30 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101524076B1 (en) * 2005-06-30 2015-05-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device

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