JPS58108097A - 不揮発性半導体メモリ素子の書込み回路 - Google Patents
不揮発性半導体メモリ素子の書込み回路Info
- Publication number
- JPS58108097A JPS58108097A JP56207409A JP20740981A JPS58108097A JP S58108097 A JPS58108097 A JP S58108097A JP 56207409 A JP56207409 A JP 56207409A JP 20740981 A JP20740981 A JP 20740981A JP S58108097 A JPS58108097 A JP S58108097A
- Authority
- JP
- Japan
- Prior art keywords
- memory element
- channel length
- write
- constant voltage
- writing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 230000005669 field effect Effects 0.000 claims description 5
- 230000015654 memory Effects 0.000 abstract description 65
- 230000006866 deterioration Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 235000015067 sauces Nutrition 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
Landscapes
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56207409A JPS58108097A (ja) | 1981-12-22 | 1981-12-22 | 不揮発性半導体メモリ素子の書込み回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56207409A JPS58108097A (ja) | 1981-12-22 | 1981-12-22 | 不揮発性半導体メモリ素子の書込み回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58108097A true JPS58108097A (ja) | 1983-06-28 |
| JPS6152559B2 JPS6152559B2 (OSRAM) | 1986-11-13 |
Family
ID=16539257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56207409A Granted JPS58108097A (ja) | 1981-12-22 | 1981-12-22 | 不揮発性半導体メモリ素子の書込み回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58108097A (OSRAM) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6163999A (ja) * | 1984-02-21 | 1986-04-02 | ガスト パ−ルゴス | Eprom及びeepromのプログラム装置 |
| JPS63160097A (ja) * | 1986-12-24 | 1988-07-02 | Toshiba Corp | 半導体不揮発性メモリ |
-
1981
- 1981-12-22 JP JP56207409A patent/JPS58108097A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6163999A (ja) * | 1984-02-21 | 1986-04-02 | ガスト パ−ルゴス | Eprom及びeepromのプログラム装置 |
| JPS63160097A (ja) * | 1986-12-24 | 1988-07-02 | Toshiba Corp | 半導体不揮発性メモリ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6152559B2 (OSRAM) | 1986-11-13 |
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