JPS5810799B2 - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS5810799B2
JPS5810799B2 JP52064561A JP6456177A JPS5810799B2 JP S5810799 B2 JPS5810799 B2 JP S5810799B2 JP 52064561 A JP52064561 A JP 52064561A JP 6456177 A JP6456177 A JP 6456177A JP S5810799 B2 JPS5810799 B2 JP S5810799B2
Authority
JP
Japan
Prior art keywords
transistor
node
voltage
transistors
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52064561A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5316537A (en
Inventor
ドナルド・ジエイ・レツドワイン
ノリヒサ・キタガワ
ヒユー・ピー・マツカダムズ
リオネル・エス・ホワイト・ジユニア
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/691,735 external-priority patent/US4081701A/en
Priority claimed from US05/716,907 external-priority patent/US4072932A/en
Priority claimed from US05/716,843 external-priority patent/US4077031A/en
Priority claimed from US05/748,790 external-priority patent/US4110639A/en
Priority claimed from US05/756,921 external-priority patent/US4144590A/en
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPS5316537A publication Critical patent/JPS5316537A/ja
Publication of JPS5810799B2 publication Critical patent/JPS5810799B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
JP52064561A 1976-06-01 1977-06-01 半導体記憶装置 Expired JPS5810799B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US69173476A 1976-06-01 1976-06-01
US05/691,735 US4081701A (en) 1976-06-01 1976-06-01 High speed sense amplifier for MOS random access memory
US05/716,907 US4072932A (en) 1976-08-23 1976-08-23 Clock generator for semiconductor memory
US05/716,843 US4077031A (en) 1976-08-23 1976-08-23 High speed address buffer for semiconductor memory
US05/748,790 US4110639A (en) 1976-12-09 1976-12-09 Address buffer circuit for high speed semiconductor memory
US75180476A 1976-12-16 1976-12-16
US05/756,921 US4144590A (en) 1976-12-29 1976-12-29 Intermediate output buffer circuit for semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5316537A JPS5316537A (en) 1978-02-15
JPS5810799B2 true JPS5810799B2 (ja) 1983-02-28

Family

ID=27569886

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52064561A Expired JPS5810799B2 (ja) 1976-06-01 1977-06-01 半導体記憶装置

Country Status (2)

Country Link
JP (1) JPS5810799B2 (enrdf_load_stackoverflow)
DE (1) DE2724646A1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4719595A (en) * 1984-11-05 1988-01-12 Kabushiki Kaisha Toshiba Data output circuit for a dynamic memory

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53120238A (en) * 1977-03-29 1978-10-20 Mitsubishi Electric Corp Semiconductor amplifier
JPS53120237A (en) * 1977-03-29 1978-10-20 Mitsubishi Electric Corp Semiconductor amplifier circuit
US4247791A (en) * 1978-04-03 1981-01-27 Rockwell International Corporation CMOS Memory sense amplifier
JPS54158828A (en) * 1978-06-06 1979-12-15 Toshiba Corp Dynamic type semiconductor memory device
JPS5817998B2 (ja) * 1978-10-26 1983-04-11 富士通株式会社 半導体メモリ
DE2855118C2 (de) * 1978-12-20 1981-03-26 IBM Deutschland GmbH, 70569 Stuttgart Dynamischer FET-Speicher
JPS5712484A (en) * 1980-06-26 1982-01-22 Mitsubishi Electric Corp Differential amplifier
JPH03228282A (ja) * 1990-10-26 1991-10-09 Hitachi Ltd 半導体メモリ

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3838295A (en) * 1973-02-05 1974-09-24 Lockheed Electronics Co Ratioless mos sense amplifier
US3879621A (en) * 1973-04-18 1975-04-22 Ibm Sense amplifier
US3838404A (en) * 1973-05-17 1974-09-24 Teletype Corp Random access memory system and cell
US3940747A (en) * 1973-08-02 1976-02-24 Texas Instruments Incorporated High density, high speed random access read-write memory
US3959781A (en) 1974-11-04 1976-05-25 Intel Corporation Semiconductor random access memory
JPS592118B2 (ja) * 1976-04-09 1984-01-17 日本電気株式会社 増巾回路
US4028557A (en) * 1976-05-21 1977-06-07 Bell Telephone Laboratories, Incorporated Dynamic sense-refresh detector amplifier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4719595A (en) * 1984-11-05 1988-01-12 Kabushiki Kaisha Toshiba Data output circuit for a dynamic memory

Also Published As

Publication number Publication date
DE2724646C2 (enrdf_load_stackoverflow) 1989-07-27
JPS5316537A (en) 1978-02-15
DE2724646A1 (de) 1977-12-15

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