JPS58102532A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS58102532A
JPS58102532A JP56200980A JP20098081A JPS58102532A JP S58102532 A JPS58102532 A JP S58102532A JP 56200980 A JP56200980 A JP 56200980A JP 20098081 A JP20098081 A JP 20098081A JP S58102532 A JPS58102532 A JP S58102532A
Authority
JP
Japan
Prior art keywords
copper
pellet
thermal expansion
substrate
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56200980A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0376578B2 (enExample
Inventor
Keizo Tani
谷　敬造
Kenichi Muramoto
村本　顕一
Yutaka Tomizawa
富澤　豊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56200980A priority Critical patent/JPS58102532A/ja
Publication of JPS58102532A publication Critical patent/JPS58102532A/ja
Publication of JPH0376578B2 publication Critical patent/JPH0376578B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W40/255—
    • H10W72/884—
    • H10W90/734—

Landscapes

  • Die Bonding (AREA)
JP56200980A 1981-12-15 1981-12-15 半導体装置 Granted JPS58102532A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56200980A JPS58102532A (ja) 1981-12-15 1981-12-15 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56200980A JPS58102532A (ja) 1981-12-15 1981-12-15 半導体装置

Publications (2)

Publication Number Publication Date
JPS58102532A true JPS58102532A (ja) 1983-06-18
JPH0376578B2 JPH0376578B2 (enExample) 1991-12-05

Family

ID=16433508

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56200980A Granted JPS58102532A (ja) 1981-12-15 1981-12-15 半導体装置

Country Status (1)

Country Link
JP (1) JPS58102532A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6089935A (ja) * 1983-10-21 1985-05-20 Hitachi Ltd 半導体装置
US6605868B2 (en) * 1998-12-10 2003-08-12 Kabushiki Kaisha Toshiba Insulating substrate including multilevel insulative ceramic layers joined with an intermediate layer
US7750310B2 (en) 2005-08-16 2010-07-06 Hitachi, Ltd. Semiconductor radioactive ray detector, radioactive ray detection module, and nuclear medicine diagnosis apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4917381A (enExample) * 1972-04-20 1974-02-15
JPS55128837A (en) * 1979-03-28 1980-10-06 Nec Corp Base for mounting semiconductor chip

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4917381A (enExample) * 1972-04-20 1974-02-15
JPS55128837A (en) * 1979-03-28 1980-10-06 Nec Corp Base for mounting semiconductor chip

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6089935A (ja) * 1983-10-21 1985-05-20 Hitachi Ltd 半導体装置
US6605868B2 (en) * 1998-12-10 2003-08-12 Kabushiki Kaisha Toshiba Insulating substrate including multilevel insulative ceramic layers joined with an intermediate layer
US7750310B2 (en) 2005-08-16 2010-07-06 Hitachi, Ltd. Semiconductor radioactive ray detector, radioactive ray detection module, and nuclear medicine diagnosis apparatus

Also Published As

Publication number Publication date
JPH0376578B2 (enExample) 1991-12-05

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