JPS58101454A - 半導体装置の電極 - Google Patents

半導体装置の電極

Info

Publication number
JPS58101454A
JPS58101454A JP56199489A JP19948981A JPS58101454A JP S58101454 A JPS58101454 A JP S58101454A JP 56199489 A JP56199489 A JP 56199489A JP 19948981 A JP19948981 A JP 19948981A JP S58101454 A JPS58101454 A JP S58101454A
Authority
JP
Japan
Prior art keywords
layer
tin
substrate
electrode
prevented
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56199489A
Other languages
English (en)
Japanese (ja)
Other versions
JPH033395B2 (enExample
Inventor
Masamichi Mori
金森周一
Shuichi Kanamori
森正道
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56199489A priority Critical patent/JPS58101454A/ja
Publication of JPS58101454A publication Critical patent/JPS58101454A/ja
Publication of JPH033395B2 publication Critical patent/JPH033395B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP56199489A 1981-12-12 1981-12-12 半導体装置の電極 Granted JPS58101454A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56199489A JPS58101454A (ja) 1981-12-12 1981-12-12 半導体装置の電極

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56199489A JPS58101454A (ja) 1981-12-12 1981-12-12 半導体装置の電極

Publications (2)

Publication Number Publication Date
JPS58101454A true JPS58101454A (ja) 1983-06-16
JPH033395B2 JPH033395B2 (enExample) 1991-01-18

Family

ID=16408655

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56199489A Granted JPS58101454A (ja) 1981-12-12 1981-12-12 半導体装置の電極

Country Status (1)

Country Link
JP (1) JPS58101454A (enExample)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074675A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd 半導体装置
JPS6190445A (ja) * 1984-10-09 1986-05-08 Nec Corp 半導体装置
JPS61224435A (ja) * 1985-03-29 1986-10-06 Toshiba Corp 半導体装置
JPS61263159A (ja) * 1985-03-15 1986-11-21 フエアチヤイルド　セミコンダクタ　コ−ポレ−シヨン 集積回路用の高温相互接続方式
JPS6255929A (ja) * 1985-09-05 1987-03-11 Toshiba Corp 半導体装置の製造方法
JPS62219921A (ja) * 1986-03-20 1987-09-28 Mitsubishi Electric Corp 半導体装置
US5155063A (en) * 1990-10-09 1992-10-13 Nec Corporation Method of fabricating semiconductor device including an al/tin/ti contact
US5240880A (en) * 1992-05-05 1993-08-31 Zilog, Inc. Ti/TiN/Ti contact metallization
US5278099A (en) * 1985-05-13 1994-01-11 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device having wiring electrodes
US6051490A (en) * 1991-11-29 2000-04-18 Sony Corporation Method of forming wirings
US6268290B1 (en) * 1991-11-19 2001-07-31 Sony Corporation Method of forming wirings
US8168996B2 (en) 2006-04-17 2012-05-01 Nichia Corporation Semiconductor light emitting device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS507430A (enExample) * 1973-05-18 1975-01-25
JPS5024596A (enExample) * 1973-02-20 1975-03-15
JPS5271174A (en) * 1975-12-10 1977-06-14 Fujitsu Ltd Production of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5024596A (enExample) * 1973-02-20 1975-03-15
JPS507430A (enExample) * 1973-05-18 1975-01-25
JPS5271174A (en) * 1975-12-10 1977-06-14 Fujitsu Ltd Production of semiconductor device

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074675A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd 半導体装置
JPS6190445A (ja) * 1984-10-09 1986-05-08 Nec Corp 半導体装置
JPS61263159A (ja) * 1985-03-15 1986-11-21 フエアチヤイルド　セミコンダクタ　コ−ポレ−シヨン 集積回路用の高温相互接続方式
JPS61224435A (ja) * 1985-03-29 1986-10-06 Toshiba Corp 半導体装置
US5278099A (en) * 1985-05-13 1994-01-11 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device having wiring electrodes
JPS6255929A (ja) * 1985-09-05 1987-03-11 Toshiba Corp 半導体装置の製造方法
JPS62219921A (ja) * 1986-03-20 1987-09-28 Mitsubishi Electric Corp 半導体装置
US5155063A (en) * 1990-10-09 1992-10-13 Nec Corporation Method of fabricating semiconductor device including an al/tin/ti contact
US6268290B1 (en) * 1991-11-19 2001-07-31 Sony Corporation Method of forming wirings
US6051490A (en) * 1991-11-29 2000-04-18 Sony Corporation Method of forming wirings
US5240880A (en) * 1992-05-05 1993-08-31 Zilog, Inc. Ti/TiN/Ti contact metallization
US8168996B2 (en) 2006-04-17 2012-05-01 Nichia Corporation Semiconductor light emitting device
US8362516B2 (en) 2006-04-17 2013-01-29 Nichia Corporation Semiconductor light emitting device

Also Published As

Publication number Publication date
JPH033395B2 (enExample) 1991-01-18

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