JPS58101420A - Forming method of deposited film - Google Patents

Abstract

PURPOSE:To form the deposited films with excellent properties very efficiently by a method wherein a cylinder type substrate is utilized as discharging electrode and DC bias is impressed between a pair of electrodes. CONSTITUTION:A deposition chamber 101 is connected to a vacuum pump through an exhaust pipe 111 and the internal pressure of the chamber may be controlled corresponding to the optimum pressure specified to discharge. Among the opposing cylinder type substrates 102, 103, one is connected to the high voltage side of RF through high tension cable 109 and the other is grounded together with other metallic parts. Now the internal pressure of the deposition chamber 101 is adjusted to say 0.2Torr. Next turn RF power supply switch ON with DC bias of +200V preliminarily impressed to supply both electrodes with power of 300W discharging electricity. Through these procedures, several deposited films with excellent properties may be formed from both electrodes very efficiently.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing a deposited film under reduced pressure, and in particular to a method for producing a deposited film under reduced pressure. The present invention relates to a method for producing a deposited film that is effective for forming a film or an organic resin.

When attempting to form a film with desired characteristics on a given substrate by introducing a gas for forming a deposited film into a pressurized deposition chamber and utilizing the plasma phenomenon caused by discharge, the low deposition efficiency of the film results in low film deposition efficiency. In terms of cost, there are many major problems that hinder the industrialization of this method.

For example, SIH4 gas is decomposed using glow discharge energy to deposit amorphous silicon hydride (a-
81:H) When trying to utilize the electrical or photoelectric properties of OI by forming a film, at present, even if the manufacturing conditions such as gas pressure, gas flow, discharge, etc. are optimized, e.g. In the case of a drum-shaped substrate, the deposition efficiency is as low as about 10 or so, which is not satisfactory when considering the cost of mass production. In particular, when used as a photoreceptor for electrophotography, it is necessary to apply a thick film over a relatively large area, which consumes a large amount of gas, and the low deposition efficiency makes it difficult to commercialize the product. This is a fatal flaw.

The causes of such low deposition efficiency can be divided into two parts: one is due to the discharge decomposition process unique to the gas used, and the other is due to the device configuration, in which only a portion of the decomposed gas can be captured on the substrate. . The former problem has a theoretical limit and there are doubts about the room for improvement, but the latter problem can be improved relatively easily by, for example, holding the substrate on both electrodes and depositing films from both sides. seems possible.

However, for example, when attempting to perform discharge decomposition using a volume-coupled RF electrode, a well-known self-bias is generated on the high-voltage side electrode, which causes changes in the characteristics of the film between the two electrodes. The current situation was that it was happening.

The present invention has been made in view of the above, and an object of the present invention is to propose a method for producing a deposited film that can efficiently obtain a deposited film that is uniform in quality and has good characteristics. .

In particular, it is an object of the present invention to propose an economical method for producing a deposited film having excellent electrophotographic properties and uniform properties over a large area.

The method for producing a deposited film of the present invention is a deposited film forming method in which a raw material gas for forming a deposited film is introduced into a chamber that can be reduced in pressure, and the raw material gas is decomposed by discharge energy to form a deposited film on a substrate. The method is characterized by using a cylindrical substrate as a discharge electrode and applying a DC bias between a pair of electrodes to simultaneously obtain a plurality of deposited films from both electrodes.

According to the manufacturing method of the present invention, the deposition efficiency can be reliably doubled compared to the conventional method, and the deposited film obtained has uniform properties over the entire area, and In addition, the film thickness is uniform over the entire area, and in the case of an a-8t:H film in particular, a film with excellent photoconductive properties and mechanical properties can be economically obtained. .

From this point of view, the method for producing deposited films of the present invention is extremely suitable for mass wafer ducts, and promises progress in the production of deposited films.

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below according to embodiments shown in the drawings.

In addition, in the following explanation, a −81 is used for rounding to avoid complexity.
A method for producing a :H film will be described, and the present invention
The method is not limited to the production of -81:H films, but is also suitable for the production of a-G.:H, silicon, r
It is also suitable for the production of insulating or photoconductive materials obtained by combining a large number of gases having constituent elements such as rumanium, Ig acid, carbon dioxide, halodane, hydrogen, etc. Doping of these with impurities such as Group V and Group V can be performed without any problem.

Other than these, for example, are all substances that can be produced by plasma polymerization included within the scope of Kempo? Listyrene, 4
The same applies to various polymer membranes typified by polyethylene, I-lipsetylene, and the like.

That is, if the raw material gas for film formation can be decomposed by discharge energy, it can be advantageously applied to the method of producing a deposited film. It is particularly suitable for producing deposited films that require photoconductive properties.

FIGS. 1 and 2 are schematic explanatory diagrams for explaining the configuration of an apparatus that embodies the manufacturing method of the present invention. Examples will be shown below according to this device example.

Example 1 In FIG. 1, 101 is a deposition chamber that can be made to have a reduced pressure.

Inside the deposition chamber 101, there are opposing cylindrical substrates 102.
103, grounding shield plate 104, gas introduction means 105
, and cylinder biasing means 106 are installed. The deposition chamber is connected to a vacuum ring through an exhaust pipe 111, and the chamber can be adjusted to a desired pressure suitable for discharge.

As shown in the figure, one side of the opposing cylinders is the DC superimposing means 1.
08, is connected to the high voltage side of the RF via a high voltage cable 109, and one end thereof is grounded together with other metal parts. The shield plate 104 is installed especially to prevent electric field leakage on the high voltage side and electric discharge in areas other than the facing area, and has a shape that allows adjustment of the sill shape and the distance from the cylinder according to the deposition conditions. ing. Furthermore, 110 is a cylinder rotation motor, which is provided to increase the uniformity of the deposited film in the circumferential direction.

With the above configuration, the cylinder temperature is set to 250°C, the cylindrical substrate 102 is under high pressure @K, and the gas supply pipe 105 is connected to the ground side with the other cylindrical substrate 103 connected to the ground side.
Silane gas was introduced at a flow rate of 1508 CCM, and the pressure inside the deposition chamber was adjusted to 0.2 torr K. Next, with a DC bias of +200V applied in advance, the RF power source was turned on, and 300W of power was applied between both electrodes.
caused an electrical discharge.

This state was maintained for 3 hours, and after cooling, both cylinders were taken out, and an a-Sl film with a thickness of 25 μm +:1 μm was obtained on both cylinders. When we calculated the deposition efficiency of the A-81 film obtained on the cylinder with respect to the amount of gas introduced at this time, we obtained a value of 4296 in terms of weight, which is about twice as high as that of the conventional method. corresponded to the value. Using the cylinders obtained in this way, we measured the electrophotographic properties and found that all of these photoreceptors had exactly the same properties and excellent levels in terms of acceptance potential photosensitivity and other aspects. It turned out that there was. Furthermore, using the same cylinder, we investigated the repeated image quality characteristics and found that (20
It has been found that the initial clear image can be obtained even after 10,000 copies).

Example 2 An example carried out using a four-cylinder deposition apparatus (plan view) shown in FIG. 2 is shown.

In the figure, 112 and 113 are electrode cylinders, 114 is a shield plate, 115 is a gas supply pipe, 116 is an exhaust hole, 1
Reference numeral 17 indicates an RF power source, and 118 indicates a DC superimposition means. With such an electrode arrangement, the other configurations were the same as in Fig. 1, and the silane gas flow rate was 2208 CCM, and the deposition chamber pressure was 0.2.
5 torr, DC bias 250V, input power so
When the film was prepared at a substrate temperature of 250° C., an a-81 film with a thickness of 21 μm±1 μm was obtained on both cylinders. The deposition efficiency at this time reached 48 mm, and characteristics equivalent to those of Example 1 were obtained. Furthermore, when similar experiments were conducted for the 6-tube and 8-tube types, books with almost the same characteristics were obtained, and the deposition efficiency was 51 for each.
It was calculated as -152.5-.

[Brief explanation of the drawing]

FIGS. 1 and 2 are explanatory views showing embodiments of the present invention. 101... Deposition chamber 102, 103... Cylindrical substrate 104... Grounded shield plate 105... Gas introducing means 106... Cylinder energizing means 107... RF power source 108... DC superimposing means 109 ...RF high voltage cable 11'0...Motor 111...Exhaust pipe 1
12.113... Electrode cylinder 114... Shield plate 115... Gas supply pipe 116... Exhaust hole 117... RF power source 1
18...DC superimposition means Fig. 1 Fig. 2

Claims (1)

[Claims] 1. In a deposited film forming apparatus that introduces a raw material gas for deposited film formation into a chamber that can be reduced in pressure, decomposes the raw material gas with discharge energy, and forms a deposited film on a substrate, a cylinder-shaped By using the substrate as a discharge electrode and applying a DC bias between a pair of electrodes in a manner that cancels out the self-potential, it is possible to obtain multiple deposited films simultaneously from both electrodes within 1%.
A method for forming a deposited film as an image. 2. The deposited film forming method according to claim 1, wherein the value of the DC bias is in the range of -1 kV to +1 kV. 3. The deposited film according to claim 1, using an electrode configured such that the midpoint of a straight line connecting the center points of circles of a pair of cylindrical electrodes substantially coincides with that of another pair of electrodes. Formation method.