JPS624873A - Film formation device - Google Patents

Abstract

PURPOSE:To efficiently perform the film formation on a supporter in excellent uniformity by arranging plural rodlike supporters in a space constituted with a plane-shaped electrode which provided to a reaction vessel and generating the glow discharge between the supporters and the electrode. CONSTITUTION:A plane-shaped electrode 3 is provided to the inside of a vacuum chamber 4 as an airtight reaction vessel and plural rodlike supporters 2 are arranged in the specified direction in the inside of the constituted space. Plural rodlike supporters 2 are not same electric potential as the electrode 3 and rotated via a gear 9 with a motor. The electrode 3 is not electrically grounded and electrically floated via the insulators 5. The supporters 2 are heated with a heat and gaseous raw material is introduced into the inside of the chamber 4 through an introduction port 10 and discharged through an exhaust port 11. Voltage is impressed between the supporters 2 and the electrode 3 via a matching box 7 from an electric power source 6 to generate the glow discharge. Thereby the film formation is efficiently performed in excellent uniformity on the supporters 2 by decomposing the gaseous raw material.

Description

DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to a film forming apparatus for forming a thin film on the surface of a rod-shaped support by glow discharge.

[Technical back kite of the invention and its problems] In recent years, the technology of decomposing raw material gas by glow discharge and forming an R9 film on the surface of a support has been needed and progressed in a wide range of fields. Examples include solar cells, R-transistors (TPTs), and photocoupled devices (CCDs), but these supports are flat.Therefore, the film-forming equipment is equipped with opposing pegs and F-plates. Parallel L: Place 3Q,
Film formation can be performed by taking a support on one side (L L:J and applying high frequency power or DC power to the other side to generate plasma.

Therefore, although it is a simple device, when attaching flat plates one above the other, dust adheres to the support placed in (■), causing problems such as pinholes, and it is difficult to form a film on large supports. It is.

On the other hand, as an application of such technology, there is a demand for film formation on curved surfaces. For example, amorphous silicon can be used as an electrophotographic photoreceptor.
Attempts have been made to use a cylindrical support, but in this case the film is formed on the side surface of a cylindrical support.

Additionally, in order to improve wear resistance, ceramics such as silicon oxide (Sin), silicon carbide (SiC), silicon nitride (SiN), boron nitride (BN), etc. are applied to the surface of the rotary drive unit H. Attempts have also been made to cover the surface with a film. Also in this case, the film is formed on a curved surface such as a rod shape.

When forming a film on such a curved surface, the fact is that it is not possible to obtain uniformity in film thickness and film quality of the support using an apparatus having parallel plate type electrodes as described above. One possibility is to provide an electrode around the support and apply electric power to it. However, when the support is cylindrical, a circular electrode coaxial with the support is provided.

If such a structure'>'j=-(: exists, uniform film formation is possible.However, in this case, since it is a batch method, the production t'1.1.: is inferior. points are occurring.

[Objective of the Invention 1] An object of the present invention is to provide a film forming apparatus capable of forming a film on a rod-shaped support with good uniformity and efficiency, which exceeds the above-mentioned method based on the above-mentioned situation 'D'.

[Summary of the Invention] In order to achieve the above object, the present invention provides a reaction vessel into which a raw material gas is introduced, a planar electrode disposed in the reaction vessel, and a connection between the planar electrode and an IV in the reaction vessel. It is equipped with a rod-shaped support provided between the rod-shaped supports and a voltage applying means for applying a voltage between the rod-shaped supports and the P-plane electrode to generate glow discharge, which is generated in the reaction vessel. This is a film forming apparatus that can form a thin film on a rod-shaped support with good uniformity and efficiency by decomposing the introduced raw material gas by glow discharge and forming a thin film on the rod-shaped support.

[Embodiment 1 of the Invention Hereinafter, an embodiment of the present invention will be explained with reference to the drawings.

1 to 3 are open views of a film forming apparatus which is an embodiment of the present invention. FIG. 1 is a top view of the film forming apparatus, and FIG. 2 is a side view of the film forming apparatus. FIG. 3 is a front view of the film forming apparatus.

The film forming apparatus 1 includes a rod-shaped support (hereinafter simply referred to as a support).

) 2 and power application electrode (hereinafter simply referred to as electrode) 3
This is a film forming chamber consisting of a vacuum chamber 4 serving as an airtight reaction vessel enclosing a film. The plurality of supports 2 may be floating even if they are electrically grounded, but if they are at the same potential as the electrode 3, it is difficult to do so. Further, the electrode 3 is not electrically grounded, but is electrically floating via an insulator 5 such as Teflon or ceramics.

By applying the electric power 6 through the matching box 7, discharge is made possible.

On the other hand, the support body 2 is heated by a heater (not shown),
[-Y-8 rotates through gear\79. Therefore, the thickness and quality of the film in the circumferential direction of 'I(A2) are made uniform.

The gas inlet 10 is configured to adjust the flow rate of the raw material gas introduced into the vacuum chamber 4 via a pipe, and the exhaust port 11 is configured to control the flow rate of the raw material gas introduced into the vacuum chamber 4 through a pipe, and the exhaust port 11 is configured to control the flow rate of the raw material gas introduced into the vacuum chamber 4 through a pipe. Inside is 0, 1Torr ~ 1()T
C
There is.

Next, we will discuss an example in which a λ9 film was formed on a rod-shaped support using the film forming apparatus shown in FIGS. 1 to 3.

Example 1 An aluminum (A1) cylinder was used as the support, 15114 SCCH of silane (S i l-1,) and 500 SCCH of diborane ([37)-1,) (diborane (82
H,) /Helium (1-18) -10<)Opp-
), applying a power of 1.2 kW and performing film formation with one valve open, a blocking layer with a thickness of 03 μm can be obtained. Next, the raw material gas is deposited on top of this blocking layer.C silane (SiH,
> using 131)4, 2. A photosensitive layer having a thickness of 3 G .mu.m is obtained by applying a power of 0.0 kW and performing solid film formation for 90 minutes. Furthermore, silane (SiH+
) to 5()O3C8M, methane < CH4) to 231
-H, applying a power of 1.2 kW and forming a film for 1 minute, the film J! A surface layer of 90.5 μm thickness is obtained.

When the product thus prepared was tested as an electrophotographic photoreceptor, good characteristics as shown in Figure 4 were obtained. There was no variation.

Example 2 TI-ting of pyramids was performed for the purpose of improving wear resistance using a shaft used for a rotary drive unit having a diameter of about 1 GM to 50 M as a support.

The throats were those for rotary compressors, those for polygon VV nodes used in laser printers, and the camshaft P throats for engines. In addition, Hiramikume uses silane (Sl IQ at 1003C) as a raw material gas.
Using CH1 nitrogen (N2) as ISl, H, 4()()-
Silicon nitride (SiN) with a film thickness of 5 μm obtained by applying a power of 60 minutes + St)i film;
LFal'l Jj Me11 Sihonon (82H6>
A nitrided film with a thickness of 3 μm obtained by applying a power of 4 G()w and forming a film for 100 minutes using O3CCH (Sifosine (B11-1.) / nitrogen (N, >= 1()%)) Boron (8N> etc.) was used.

In this way, the sliding part of the rotary drive unit is manufactured using Relamics.
Inverter air with T ink is 21Kq1
5Kq condition 21<)&<)Or, l), 1. The phenomenon of seizure due to wear did not appear during the Hatake rotation.

Example 3 In order to perform film formation more efficiently, the method shown in Fig. 5-1-
J. The walls on both sides of the vacuum f-p shield 4 as a sea urchin film forming chamber are placed around the gate valve 12, and a pre-processing chamber 13 and a post-processing chamber 14 are provided. Pre-treatment such as heating of the support is performed, and the post-treatment chamber 1/IC is heated with cold O1+, such as helium (He). Cold due to introduction? JI 1
It became 1.

In this way, the products described in Example 1 and Example 2 are described below. It can be produced continuously, making it more efficient.
It was divisive.

Effect 1 of the Invention As explained above, according to the present invention, a film can be formed on a rod-shaped support with good uniformity and efficiency, and mass productivity can be improved.

[Brief explanation of the drawing]

Fig. 1 is a top view of a film forming apparatus that is an embodiment of the present invention, Fig. 2 is a side view of the same film forming apparatus, and Fig. 3 is a front view of the same film forming apparatus. 4 shows electrophotographic characteristics of an electrophotographic photoreceptor formed using the film forming apparatus shown in FIGS. 1 to 3, and FIG. 5 shows another embodiment of the present invention. It is a figure which does not show a film-forming apparatus. ]...Film forming apparatus, 2...-rod-shaped support, 3--electrode for power application (planar electrode), 4--vacuum chamber (reaction''&Z>, 6---plasma generation Power supply (voltage application means) Agent Patent attorney Rules Kensuke Chika Agent Patent attorney Norihiro Ogo Procedures Amendment m (Method) 1939 1o,
4th day

Claims (5)

[Claims] (1) A reaction vessel into which a raw material gas is introduced, a planar electrode provided within this reaction vessel, a rod-shaped support provided between this planar electrode and the inner wall of the reaction vessel, and this rod-shaped support. a voltage applying means for applying a voltage between the planar electrode and generating a glow discharge; the introduced raw material gas is decomposed by the glow discharge generated in the reaction vessel, and the rod-shaped support A film forming apparatus characterized by forming a thin film on a body. (2) The film forming apparatus according to claim 1, wherein the rod-shaped supports are arranged in at least two spaces formed between the planar electrode and the inner wall of the reaction vessel. (3) The film forming apparatus according to claim 2, wherein the rod-shaped supports are arranged on both sides of the planar electrode. (4) The film forming apparatus according to any one of claims 1 to 3, wherein the rod-shaped supports are arranged in a fixed direction and rotatably installed. (5) Claims 1 to 4, characterized in that the reaction vessel is comprised of a pre-treatment chamber, a film-forming chamber, and a post-treatment chamber.
The film forming apparatus described in Section 1.