JPS58100679A - 高融点金属とケイ素とからなるマグネトロンスパッタ用分割タ−ゲット - Google Patents
高融点金属とケイ素とからなるマグネトロンスパッタ用分割タ−ゲットInfo
- Publication number
- JPS58100679A JPS58100679A JP19772281A JP19772281A JPS58100679A JP S58100679 A JPS58100679 A JP S58100679A JP 19772281 A JP19772281 A JP 19772281A JP 19772281 A JP19772281 A JP 19772281A JP S58100679 A JPS58100679 A JP S58100679A
- Authority
- JP
- Japan
- Prior art keywords
- divided
- target according
- pieces
- small pieces
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19772281A JPS58100679A (ja) | 1981-12-10 | 1981-12-10 | 高融点金属とケイ素とからなるマグネトロンスパッタ用分割タ−ゲット |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19772281A JPS58100679A (ja) | 1981-12-10 | 1981-12-10 | 高融点金属とケイ素とからなるマグネトロンスパッタ用分割タ−ゲット |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58100679A true JPS58100679A (ja) | 1983-06-15 |
| JPS6134509B2 JPS6134509B2 (enrdf_load_stackoverflow) | 1986-08-08 |
Family
ID=16379256
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19772281A Granted JPS58100679A (ja) | 1981-12-10 | 1981-12-10 | 高融点金属とケイ素とからなるマグネトロンスパッタ用分割タ−ゲット |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58100679A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61166964A (ja) * | 1985-01-18 | 1986-07-28 | Tokuda Seisakusho Ltd | スパツタリング用タ−ゲツト |
| JPS6475673A (en) * | 1987-09-17 | 1989-03-22 | Fujitsu Ltd | Composite sputter target |
| EP0489396A1 (de) * | 1990-12-06 | 1992-06-10 | Multi-Arc Oberflächentechnik GmbH | Segmentierte Kathode für Lichtbogenbeschichtungsverfahren |
-
1981
- 1981-12-10 JP JP19772281A patent/JPS58100679A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61166964A (ja) * | 1985-01-18 | 1986-07-28 | Tokuda Seisakusho Ltd | スパツタリング用タ−ゲツト |
| JPS6475673A (en) * | 1987-09-17 | 1989-03-22 | Fujitsu Ltd | Composite sputter target |
| EP0489396A1 (de) * | 1990-12-06 | 1992-06-10 | Multi-Arc Oberflächentechnik GmbH | Segmentierte Kathode für Lichtbogenbeschichtungsverfahren |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6134509B2 (enrdf_load_stackoverflow) | 1986-08-08 |
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