JPS58100423A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS58100423A JPS58100423A JP57200958A JP20095882A JPS58100423A JP S58100423 A JPS58100423 A JP S58100423A JP 57200958 A JP57200958 A JP 57200958A JP 20095882 A JP20095882 A JP 20095882A JP S58100423 A JPS58100423 A JP S58100423A
- Authority
- JP
- Japan
- Prior art keywords
- region
- silicon
- semiconductor
- film
- glass layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10P76/40—
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57200958A JPS58100423A (ja) | 1982-11-15 | 1982-11-15 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57200958A JPS58100423A (ja) | 1982-11-15 | 1982-11-15 | 半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51114052A Division JPS6035818B2 (ja) | 1976-09-22 | 1976-09-22 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58100423A true JPS58100423A (ja) | 1983-06-15 |
| JPS6229890B2 JPS6229890B2 (OSRAM) | 1987-06-29 |
Family
ID=16433132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57200958A Granted JPS58100423A (ja) | 1982-11-15 | 1982-11-15 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58100423A (OSRAM) |
-
1982
- 1982-11-15 JP JP57200958A patent/JPS58100423A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6229890B2 (OSRAM) | 1987-06-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4408387A (en) | Method for producing a bipolar transistor utilizing an oxidized semiconductor masking layer in conjunction with an anti-oxidation mask | |
| JP3014012B2 (ja) | 半導体装置の製造方法 | |
| JPS6361777B2 (OSRAM) | ||
| JPH0828424B2 (ja) | 半導体装置およびその製造方法 | |
| JPS58100423A (ja) | 半導体装置の製造方法 | |
| JPH0239091B2 (OSRAM) | ||
| JP2505159B2 (ja) | 半導体装置の製造方法 | |
| JPS6330787B2 (OSRAM) | ||
| JP2571449B2 (ja) | バイポーラicの製造方法 | |
| JPS59107572A (ja) | 半導体装置の製造方法 | |
| JPS6229891B2 (OSRAM) | ||
| JPH0136709B2 (OSRAM) | ||
| JPS59100521A (ja) | 半導体装置の製造方法 | |
| JPS5966168A (ja) | 半導体装置の製法 | |
| JPS5879735A (ja) | 半導体集積回路 | |
| JPS6211504B2 (OSRAM) | ||
| JPS5941851A (ja) | 半導体装置の製造方法 | |
| JPS59134868A (ja) | 半導体装置の製造方法 | |
| JPS5984543A (ja) | バイポ−ラ集積回路装置およびその製造方法 | |
| JPH0650740B2 (ja) | 半導体装置 | |
| JPS59231833A (ja) | 半導体装置及びその製造法 | |
| JPH08298284A (ja) | 半導体装置の製造方法 | |
| JPS6164161A (ja) | 半導体装置及びその製造方法 | |
| JPS639150A (ja) | 半導体装置の製造方法 | |
| JPH053210A (ja) | 半導体装置の製造方法 |