JPS5799745A - Method of producing integrated circuit device - Google Patents

Method of producing integrated circuit device

Info

Publication number
JPS5799745A
JPS5799745A JP56166512A JP16651281A JPS5799745A JP S5799745 A JPS5799745 A JP S5799745A JP 56166512 A JP56166512 A JP 56166512A JP 16651281 A JP16651281 A JP 16651281A JP S5799745 A JPS5799745 A JP S5799745A
Authority
JP
Japan
Prior art keywords
integrated circuit
circuit device
producing integrated
producing
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56166512A
Other languages
English (en)
Japanese (ja)
Inventor
Lifshitz Nadia
Michael Moran Joseph
Nin-Kou Wang David
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of JPS5799745A publication Critical patent/JPS5799745A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP56166512A 1980-10-20 1981-10-20 Method of producing integrated circuit device Pending JPS5799745A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/199,023 US4333793A (en) 1980-10-20 1980-10-20 High-selectivity plasma-assisted etching of resist-masked layer

Publications (1)

Publication Number Publication Date
JPS5799745A true JPS5799745A (en) 1982-06-21

Family

ID=22735887

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56166512A Pending JPS5799745A (en) 1980-10-20 1981-10-20 Method of producing integrated circuit device

Country Status (13)

Country Link
US (1) US4333793A (show.php)
JP (1) JPS5799745A (show.php)
BE (1) BE890772A (show.php)
CA (1) CA1160759A (show.php)
DE (1) DE3140890C2 (show.php)
ES (1) ES8207386A1 (show.php)
FR (1) FR2492591A1 (show.php)
GB (1) GB2085809B (show.php)
HK (1) HK6786A (show.php)
IE (1) IE52530B1 (show.php)
IT (1) IT1139988B (show.php)
NL (1) NL191587C (show.php)
SE (1) SE455743B (show.php)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6083332A (ja) * 1983-10-12 1985-05-11 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 重合体パタ−ンの形成方法

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0050973B1 (en) * 1980-10-28 1986-01-22 Kabushiki Kaisha Toshiba Masking process for semiconductor devices using a polymer film
US4397724A (en) * 1981-08-24 1983-08-09 Bell Telephone Laboratories, Incorporated Apparatus and method for plasma-assisted etching of wafers
US4372807A (en) * 1982-03-25 1983-02-08 Rca Corporation Plasma etching of aluminum
US4375385A (en) * 1982-03-25 1983-03-01 Rca Corporation Plasma etching of aluminum
JPS58204537A (ja) * 1982-05-24 1983-11-29 Hitachi Ltd プラズマエツチング方法
US4422897A (en) * 1982-05-25 1983-12-27 Massachusetts Institute Of Technology Process for selectively etching silicon
US4436584A (en) 1983-03-21 1984-03-13 Sperry Corporation Anisotropic plasma etching of semiconductors
US4451349A (en) * 1983-04-20 1984-05-29 International Business Machines Corporation Electrode treatment for plasma patterning of polymers
JPH0622212B2 (ja) * 1983-05-31 1994-03-23 株式会社東芝 ドライエッチング方法
US4430153A (en) 1983-06-30 1984-02-07 International Business Machines Corporation Method of forming an RIE etch barrier by in situ conversion of a silicon containing alkyl polyamide/polyimide
US4470871A (en) * 1983-12-27 1984-09-11 Rca Corporation Preparation of organic layers for oxygen etching
US4534826A (en) * 1983-12-29 1985-08-13 Ibm Corporation Trench etch process for dielectric isolation
US4601913A (en) * 1984-06-27 1986-07-22 International Business Machines Corporation Underlay surface modification to control resin glass polymerization
US4528066A (en) * 1984-07-06 1985-07-09 Ibm Corporation Selective anisotropic reactive ion etching process for polysilicide composite structures
US4613400A (en) * 1985-05-20 1986-09-23 Applied Materials, Inc. In-situ photoresist capping process for plasma etching
DE3615519A1 (de) * 1986-05-07 1987-11-12 Siemens Ag Verfahren zum erzeugen von kontaktloechern mit abgeschraegten flanken in zwischenoxidschichten
US5332653A (en) * 1992-07-01 1994-07-26 Motorola, Inc. Process for forming a conductive region without photoresist-related reflective notching damage
US5562801A (en) * 1994-04-28 1996-10-08 Cypress Semiconductor Corporation Method of etching an oxide layer
JP3073906B2 (ja) * 1995-03-27 2000-08-07 財団法人国際超電導産業技術研究センター 超電導デバイスの製造方法
KR100327346B1 (ko) * 1999-07-20 2002-03-06 윤종용 선택적 폴리머 증착을 이용한 플라즈마 식각방법 및 이를이용한 콘택홀 형성방법
US6699792B1 (en) * 2001-07-17 2004-03-02 Advanced Micro Devices, Inc. Polymer spacers for creating small geometry space and method of manufacture thereof
CN100451831C (zh) * 2001-10-29 2009-01-14 旺宏电子股份有限公司 减小图案间隙或开口尺寸的方法
US6573177B1 (en) * 2002-02-19 2003-06-03 Macronix International Co., Ltd. Protection layer to prevent under-layer damage during deposition
US9159561B2 (en) 2013-12-26 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method for overcoming broken line and photoresist scum issues in tri-layer photoresist patterning
CN115047728B (zh) * 2022-07-01 2025-04-08 中国科学院光电技术研究所 等离子体共振腔透镜光刻的成像结构保护方法及其结构

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5036075A (show.php) * 1973-05-17 1975-04-04
JPS5454578A (en) * 1977-10-11 1979-04-28 Fujitsu Ltd Gas plasma etching method
JPS5455174A (en) * 1977-10-06 1979-05-02 Ibm Etching method
JPS5470772A (en) * 1977-11-16 1979-06-06 Cho Lsi Gijutsu Kenkyu Kumiai Dry etching method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3692655A (en) * 1971-04-05 1972-09-19 Rca Corp Method of radiofrequency sputter etching
US3816196A (en) * 1971-06-07 1974-06-11 Gen Electric Passivation of photoresist materials used in selective plasma etching
US4226896A (en) * 1977-12-23 1980-10-07 International Business Machines Corporation Plasma method for forming a metal containing polymer
US4244799A (en) * 1978-09-11 1981-01-13 Bell Telephone Laboratories, Incorporated Fabrication of integrated circuits utilizing thick high-resolution patterns
US4275286A (en) * 1978-12-04 1981-06-23 Hughes Aircraft Company Process and mask for ion beam etching of fine patterns

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5036075A (show.php) * 1973-05-17 1975-04-04
JPS5455174A (en) * 1977-10-06 1979-05-02 Ibm Etching method
JPS5454578A (en) * 1977-10-11 1979-04-28 Fujitsu Ltd Gas plasma etching method
JPS5470772A (en) * 1977-11-16 1979-06-06 Cho Lsi Gijutsu Kenkyu Kumiai Dry etching method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6083332A (ja) * 1983-10-12 1985-05-11 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 重合体パタ−ンの形成方法

Also Published As

Publication number Publication date
FR2492591A1 (fr) 1982-04-23
IT8124559A0 (it) 1981-10-19
GB2085809B (en) 1984-06-20
SE8105859L (sv) 1982-04-21
NL191587B (nl) 1995-06-01
BE890772A (fr) 1982-02-15
FR2492591B1 (show.php) 1984-12-21
CA1160759A (en) 1984-01-17
DE3140890A1 (de) 1982-06-16
NL191587C (nl) 1995-10-03
SE455743B (sv) 1988-08-01
IE52530B1 (en) 1987-12-09
IE812455L (en) 1982-04-20
NL8104741A (nl) 1982-05-17
GB2085809A (en) 1982-05-06
US4333793A (en) 1982-06-08
ES506354A0 (es) 1982-09-01
DE3140890C2 (de) 1997-08-21
IT1139988B (it) 1986-09-24
ES8207386A1 (es) 1982-09-01
HK6786A (en) 1986-02-07

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