JPS5792490A - Semiconductor storage device - Google Patents
Semiconductor storage deviceInfo
- Publication number
- JPS5792490A JPS5792490A JP16862080A JP16862080A JPS5792490A JP S5792490 A JPS5792490 A JP S5792490A JP 16862080 A JP16862080 A JP 16862080A JP 16862080 A JP16862080 A JP 16862080A JP S5792490 A JPS5792490 A JP S5792490A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- cell
- erasure
- line
- voltage vth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000005684 electric field Effects 0.000 abstract 1
- 230000000630 rising effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
Landscapes
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16862080A JPS5792490A (en) | 1980-11-29 | 1980-11-29 | Semiconductor storage device |
| DE8181305349T DE3175125D1 (en) | 1980-11-20 | 1981-11-11 | Semiconductor memory device and method for manufacturing the same |
| EP81305349A EP0052982B1 (en) | 1980-11-20 | 1981-11-11 | Semiconductor memory device and method for manufacturing the same |
| US06/321,322 US4803529A (en) | 1980-11-20 | 1981-11-13 | Electrically erasable and electrically programmable read only memory |
| US07/193,079 US4910565A (en) | 1980-11-20 | 1988-05-12 | Electrically erasable and electrically programmable read-only memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16862080A JPS5792490A (en) | 1980-11-29 | 1980-11-29 | Semiconductor storage device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5792490A true JPS5792490A (en) | 1982-06-09 |
| JPS6226597B2 JPS6226597B2 (enrdf_load_stackoverflow) | 1987-06-09 |
Family
ID=15871431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16862080A Granted JPS5792490A (en) | 1980-11-20 | 1980-11-29 | Semiconductor storage device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5792490A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01257794A (ja) * | 1988-04-05 | 1989-10-13 | Daikin Ind Ltd | 真空ポンプ |
| JPH0482395U (enrdf_load_stackoverflow) * | 1990-11-29 | 1992-07-17 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55101192A (en) * | 1979-01-24 | 1980-08-01 | Xicor Inc | Method and unit for nonnvolatile memory |
| JPS5715470A (en) * | 1980-06-30 | 1982-01-26 | Ibm | Electrically programmable/erasable mos memory cell |
-
1980
- 1980-11-29 JP JP16862080A patent/JPS5792490A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55101192A (en) * | 1979-01-24 | 1980-08-01 | Xicor Inc | Method and unit for nonnvolatile memory |
| JPS5715470A (en) * | 1980-06-30 | 1982-01-26 | Ibm | Electrically programmable/erasable mos memory cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6226597B2 (enrdf_load_stackoverflow) | 1987-06-09 |
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