JPS5792489A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS5792489A
JPS5792489A JP16861980A JP16861980A JPS5792489A JP S5792489 A JPS5792489 A JP S5792489A JP 16861980 A JP16861980 A JP 16861980A JP 16861980 A JP16861980 A JP 16861980A JP S5792489 A JPS5792489 A JP S5792489A
Authority
JP
Japan
Prior art keywords
gate
cell
erasure
line
voltage vth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16861980A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6226596B2 (enrdf_load_stackoverflow
Inventor
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16861980A priority Critical patent/JPS5792489A/ja
Priority to EP81305349A priority patent/EP0052982B1/en
Priority to DE8181305349T priority patent/DE3175125D1/de
Priority to US06/321,322 priority patent/US4803529A/en
Publication of JPS5792489A publication Critical patent/JPS5792489A/ja
Publication of JPS6226596B2 publication Critical patent/JPS6226596B2/ja
Priority to US07/193,079 priority patent/US4910565A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates

Landscapes

  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
JP16861980A 1980-11-20 1980-11-29 Semiconductor storage device Granted JPS5792489A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP16861980A JPS5792489A (en) 1980-11-29 1980-11-29 Semiconductor storage device
EP81305349A EP0052982B1 (en) 1980-11-20 1981-11-11 Semiconductor memory device and method for manufacturing the same
DE8181305349T DE3175125D1 (en) 1980-11-20 1981-11-11 Semiconductor memory device and method for manufacturing the same
US06/321,322 US4803529A (en) 1980-11-20 1981-11-13 Electrically erasable and electrically programmable read only memory
US07/193,079 US4910565A (en) 1980-11-20 1988-05-12 Electrically erasable and electrically programmable read-only memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16861980A JPS5792489A (en) 1980-11-29 1980-11-29 Semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS5792489A true JPS5792489A (en) 1982-06-09
JPS6226596B2 JPS6226596B2 (enrdf_load_stackoverflow) 1987-06-09

Family

ID=15871410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16861980A Granted JPS5792489A (en) 1980-11-20 1980-11-29 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5792489A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5823390A (ja) * 1981-07-30 1983-02-12 Toshiba Corp 半導体記憶装置
JPS61225862A (ja) * 1985-03-30 1986-10-07 Toshiba Corp 半導体記憶装置
CN107293582A (zh) * 2017-07-10 2017-10-24 东南大学 面向物联网的硅基具有热电转换功能的bjt器件

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5823390A (ja) * 1981-07-30 1983-02-12 Toshiba Corp 半導体記憶装置
JPS61225862A (ja) * 1985-03-30 1986-10-07 Toshiba Corp 半導体記憶装置
CN107293582A (zh) * 2017-07-10 2017-10-24 东南大学 面向物联网的硅基具有热电转换功能的bjt器件
CN107293582B (zh) * 2017-07-10 2020-04-24 东南大学 面向物联网的硅基具有热电转换功能的bjt器件

Also Published As

Publication number Publication date
JPS6226596B2 (enrdf_load_stackoverflow) 1987-06-09

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