JPS5783067A - Photoreceiving device - Google Patents
Photoreceiving deviceInfo
- Publication number
- JPS5783067A JPS5783067A JP55158549A JP15854980A JPS5783067A JP S5783067 A JPS5783067 A JP S5783067A JP 55158549 A JP55158549 A JP 55158549A JP 15854980 A JP15854980 A JP 15854980A JP S5783067 A JPS5783067 A JP S5783067A
- Authority
- JP
- Japan
- Prior art keywords
- devices
- gamma rays
- light
- diodes
- coming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000013307 optical fiber Substances 0.000 abstract 1
- 230000002285 radioactive effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Optical Communication System (AREA)
Abstract
PURPOSE:To produce a device immune to interference by gamma rays or the like by a method wherein a light signal receiving device and another of the same performance screened from the in-coming light are located so that both may be simultaneously exposed to gamma rays or the like and the difference between the signals going through the two devices are obtained. CONSTITUTION:Formed by selective diffusion at places opposite to each other on the outer sides of depletion layer regions 15 and 15a sandwiching an n<+> substrate 11 are p type regions. Then, SiO2 films 12a and 12b are deposited on the outer surfaces of depletion layers 15 and 15a and metal electrodes 14a and 14b are built on the SiO2 films 12a and 12b, producing two p-i-n diodes A and B coupled back to back with each other. The light emitting end of an optical fiber 16 is positioned facing the light receiving window 13a of one of the two devices, A for example, and a photosignal is inputted therein. The signals out of the diodes A and B are processed in a differential circuit 19 consisting of a subtractor from which they are yielded as a difference signal. Noises caused by such radioactive rays 18 as gamma rays coming into the devices are removed by mutual cancelling out. This photoreceiving device can be suitably employed in a control system for a nuclear power plant, etc.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55158549A JPS5783067A (en) | 1980-11-11 | 1980-11-11 | Photoreceiving device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55158549A JPS5783067A (en) | 1980-11-11 | 1980-11-11 | Photoreceiving device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5783067A true JPS5783067A (en) | 1982-05-24 |
Family
ID=15674129
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55158549A Pending JPS5783067A (en) | 1980-11-11 | 1980-11-11 | Photoreceiving device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5783067A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS583335A (en) * | 1981-06-29 | 1983-01-10 | Sumitomo Electric Ind Ltd | Optical receiver |
-
1980
- 1980-11-11 JP JP55158549A patent/JPS5783067A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS583335A (en) * | 1981-06-29 | 1983-01-10 | Sumitomo Electric Ind Ltd | Optical receiver |
| JPS6324576B2 (en) * | 1981-06-29 | 1988-05-21 | Sumitomo Electric Industries |
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