JPS5775475A - Magnetoresistance effect element - Google Patents
Magnetoresistance effect elementInfo
- Publication number
- JPS5775475A JPS5775475A JP55151804A JP15180480A JPS5775475A JP S5775475 A JPS5775475 A JP S5775475A JP 55151804 A JP55151804 A JP 55151804A JP 15180480 A JP15180480 A JP 15180480A JP S5775475 A JPS5775475 A JP S5775475A
- Authority
- JP
- Japan
- Prior art keywords
- core
- stripe
- winding
- bias
- magnetoresistance effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000694 effects Effects 0.000 title abstract 3
- 239000000126 substance Substances 0.000 abstract 4
- 230000035699 permeability Effects 0.000 abstract 3
- 238000004804 winding Methods 0.000 abstract 3
- 230000001172 regenerating effect Effects 0.000 abstract 2
- 230000035945 sensitivity Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Hall/Mr Elements (AREA)
Abstract
PURPOSE:To increase the regenerative sensitivity of a magnetoresistance effect element and to contrive the extension of element usage by a method wherein the magnetoresistance effect element and a high-magnetic permeability magnetic substance are contacted. CONSTITUTION:A plane having the fixed width GL gap of a core 7 consisting of a high-magnetic permeability magnetic substance filled with a nonmagnetic substance 6 is formed in flat plane and an MR stripe 1 having broader width W than width GL is formed on oblong shape to directly contact the side end of the stripe 1 with the core 7 at the opposite sides of the gap. The electric resistance value of the core 7 consisting of the high-magnetic permeability magnetic substance is made a value of one figure or more higher than the electric resistance of the MR strip 1. And a winding 8 is applied to the core 7 to flow a DC current into the winding 8 and a bias magnetic field is generated on the core 7 and an AC bias magnetic field is also generated by flowing an AC current into the winding 8. And the regenerative sensitivity of the MR stripe 1 is increased to expand element usage by forming the DC bias or AC bias magnetic field.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55151804A JPS5775475A (en) | 1980-10-29 | 1980-10-29 | Magnetoresistance effect element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55151804A JPS5775475A (en) | 1980-10-29 | 1980-10-29 | Magnetoresistance effect element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5775475A true JPS5775475A (en) | 1982-05-12 |
JPH028468B2 JPH028468B2 (en) | 1990-02-23 |
Family
ID=15526660
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55151804A Granted JPS5775475A (en) | 1980-10-29 | 1980-10-29 | Magnetoresistance effect element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5775475A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0577775U (en) * | 1991-04-12 | 1993-10-22 | 明子 稲木 | Current detector |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55130187A (en) * | 1979-03-30 | 1980-10-08 | Sony Corp | Magnetoelectric transducer |
JPS55134969A (en) * | 1979-04-09 | 1980-10-21 | Toshiba Corp | Semiconductor device and manufacture thereof |
-
1980
- 1980-10-29 JP JP55151804A patent/JPS5775475A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55130187A (en) * | 1979-03-30 | 1980-10-08 | Sony Corp | Magnetoelectric transducer |
JPS55134969A (en) * | 1979-04-09 | 1980-10-21 | Toshiba Corp | Semiconductor device and manufacture thereof |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0577775U (en) * | 1991-04-12 | 1993-10-22 | 明子 稲木 | Current detector |
Also Published As
Publication number | Publication date |
---|---|
JPH028468B2 (en) | 1990-02-23 |
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