JPH028468B2 - - Google Patents
Info
- Publication number
- JPH028468B2 JPH028468B2 JP55151804A JP15180480A JPH028468B2 JP H028468 B2 JPH028468 B2 JP H028468B2 JP 55151804 A JP55151804 A JP 55151804A JP 15180480 A JP15180480 A JP 15180480A JP H028468 B2 JPH028468 B2 JP H028468B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- gap
- stripe
- core
- magnetic material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005291 magnetic effect Effects 0.000 claims description 40
- 239000000696 magnetic material Substances 0.000 claims description 15
- 230000035699 permeability Effects 0.000 claims description 13
- 238000004804 winding Methods 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 5
- 230000005294 ferromagnetic effect Effects 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 4
- 239000011162 core material Substances 0.000 description 11
- 230000035945 sensitivity Effects 0.000 description 9
- 230000005415 magnetization Effects 0.000 description 4
- 230000004907 flux Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Hall/Mr Elements (AREA)
Description
【発明の詳細な説明】
本発明は、強磁性体薄膜の磁気抵抗効果を利用
して磁気信号を検出する磁気抵抗効果素子（以下
MR素子と略称する）に関するものである。Detailed Description of the Invention The present invention is directed to a magnetoresistive element (hereinafter referred to as
(abbreviated as MR element).
MR素子は、信号磁界に対する再生感度が高い
磁場検出素子として注目されているが、近年より
一層の高感度化が望まれている。 MR elements have attracted attention as magnetic field detection elements with high reproduction sensitivity to signal magnetic fields, but in recent years, even higher sensitivity has been desired.
MR素子の感度を高める方法として、従来第１
図ａ，ｂ，ｃ，ｄに示すように、磁気抵抗効果を
有する強磁性薄膜ストライプ（以下、MRストラ
イプと称する）１の幅Ｗ方向（Ｘ方向）、即ち、
検出磁場Hxの方向の片側又は両側で、しかも、
MRストライプ１と同一面上又は薄い非磁性層
（厚さＨ）Ｑを介した面上に短冊状または矩形の
高透磁率磁性体２，２′を隣接並置する構成が知
られている。ここで３は端子、４は基板である。 Conventionally, the first method to increase the sensitivity of MR elements was
As shown in Figures a, b, c, and d, the width W direction (X direction) of a ferromagnetic thin film stripe (hereinafter referred to as MR stripe) 1 having a magnetoresistive effect, that is,
on one or both sides of the direction of the detected magnetic field H x , and
A configuration is known in which strip-shaped or rectangular high magnetic permeability magnetic bodies 2, 2' are arranged adjacently on the same plane as the MR stripe 1 or on the plane with a thin non-magnetic layer (thickness H) Q interposed therebetween. Here, 3 is a terminal and 4 is a board.
隣接並置した高透磁率磁性体２，２′は、MR
ストライプ１内の反磁場を小さくし、その結果、
MRストライプ１の幅方向（Ｘ方向）に入射する
磁気信号Hxに対する再生感度を高める効果があ
る。 The high magnetic permeability magnetic bodies 2 and 2' placed adjacent to each other are MR
The demagnetizing field within stripe 1 is reduced, resulting in
This has the effect of increasing the reproduction sensitivity to the magnetic signal H x incident in the width direction (X direction) of the MR stripe 1.
そして、この再生感度は、MRストライプ１の
側端と高透磁率磁性体２又は２′の側端との距離
すなわちギヤロツプＧ、又は非磁性層５の厚さＨ
が小さい程高くなることが知られている。 This reproduction sensitivity is determined by the distance between the side edge of the MR stripe 1 and the side edge of the high magnetic permeability magnetic material 2 or 2', that is, the gap G, or the thickness H of the nonmagnetic layer 5.
It is known that the smaller the value, the higher the value.
しかし、従来、高透磁率磁性体２，２′として
は、電気抵抗が小さいパーマロイなどの金属強磁
性体を採用していたため、MRストライプ１に対
して有限の距離Ｇを隔てて配設しなければならな
かつた。したがつて、従来の構成ではMR素子の
再生感度を著しく大きく向上させるには不十分で
あつた。 However, conventionally, the high permeability magnetic materials 2 and 2' have been made of metal ferromagnetic materials such as permalloy with low electrical resistance, so they must be placed at a finite distance G from the MR stripe 1. It was impossible. Therefore, the conventional configuration was insufficient to significantly improve the reproduction sensitivity of the MR element.
本発明の目的は、MRストライプと高透磁率磁
性体とを接触させることにより、従来より一段と
再生感度を高くしたMR素子を提供することにあ
る。 An object of the present invention is to provide an MR element that has higher reproduction sensitivity than the conventional one by bringing an MR stripe into contact with a high permeability magnetic material.
すなわち、本発明は、強磁性薄膜より成るMR
素子において、一定幅のギヤツプを有し高電気抵
抗の高透磁率磁性体から成るコアの前記ギヤツプ
上に、短冊状MRストライプがそのギヤツプ幅よ
り広い幅をもつてそのギヤツプ両側の高透磁率磁
性体と接する様に形成されているMR素子であ
る。 That is, the present invention provides an MR device made of a ferromagnetic thin film.
In the element, on the gap of a core made of a high magnetic permeability magnetic material with a high electric resistance and having a gap of a constant width, a strip-shaped MR stripe is formed on both sides of the gap with a width wider than the gap width and a high permeability magnetic material on both sides of the gap. This is an MR element that is formed so as to be in contact with the body.
次に、本発明の実施例について図面を参照して
説明する。第２図は、本発明の一実施例であり、
同図ａは斜視図、同図ｂはそのAA′断面図であ
る。すなわち、非磁性体６で充填された高透磁率
磁性体から成るコア７の一定幅GLのギヤツプを
有する面が平面となる様に形成されており、この
ギヤツプ上に、GLより広い幅Ｗを有する短冊状
MRストライプ１が、その側端において直接ギヤ
ツプ両側のコア材７に接する様に形成されてい
る。ここで、MRストライプとしては、鉄、ニツ
ケル、コバルトなどの強磁性金属単体、又はこれ
らを主成分とするパーマロイなどの金属強磁性合
金が厚さ数百オングストローム、ストライプ幅数
〜数十ミクロン、長さ数十ミクロン〜数ミリメー
トルの形状に、両端の電気端子３と共に薄膜作製
技術で作製されたものが用いられる。 Next, embodiments of the present invention will be described with reference to the drawings. FIG. 2 is an embodiment of the present invention,
Figure a is a perspective view, and figure b is a sectional view along AA' thereof. That is, the core 7 made of a high magnetic permeability magnetic material filled with a non-magnetic material 6 is formed so that the surface having a gap of a constant width GL is a flat surface, and a width W wider than GL is formed on this gap. strip-shaped with
The MR stripe 1 is formed so that its side ends are in direct contact with the core material 7 on both sides of the gap. Here, the MR stripe is made of a single ferromagnetic metal such as iron, nickel, or cobalt, or a metal ferromagnetic alloy such as permalloy containing these as its main components, with a thickness of several hundred angstroms, a stripe width of several to several tens of microns, and a long length. It has a shape of several tens of microns to several millimeters and is manufactured using a thin film manufacturing technique together with electrical terminals 3 at both ends.
一方、コア材７としては、MR素子１に比べて
電気抵抗が１桁以上大きいフエライトの様な高透
磁率磁性体が用いられる。また、非磁性体として
は、ガラス、SiO2若しくはAl2O3などの絶縁体又
は有機絶縁材などが用いられる。 On the other hand, as the core material 7, a high permeability magnetic material such as ferrite, which has an electrical resistance one order of magnitude higher than that of the MR element 1, is used. Further, as the non-magnetic material, glass, an insulator such as SiO 2 or Al 2 O 3 , or an organic insulating material is used.
このように構成することにより、第１図で示し
た従来例において高透磁率磁性体２，２′をMR
ストライプ１の側端に接する様に設けたのと等価
な効果、つまり、Ｘ方向信号磁界に対して極めて
高感度なMR素子が得られる。 With this configuration, in the conventional example shown in FIG.
An effect equivalent to that obtained by providing the MR element in contact with the side edge of the stripe 1, that is, an MR element with extremely high sensitivity to the X-direction signal magnetic field can be obtained.
第３図は本発明の他の実施例を示した概略側面
図である。これは、第１の実施例（第２図）で述
べたコア７の一部に巻線８が施こされたものであ
る。この巻線８は次の２つの用途に用いられる。
第１の用途はバイアス磁界印加手段である。つま
り、巻線８に流れる直流電流がコア内に発生する
磁束によつて、MR素子１内の磁化をMR素子長
手方向（ｙ方向）から約45度方向に傾けて、Ｘ方
向の信号磁界に対して線型応答となる様にでき
る。あるいは、巻線８に信号磁界の変化に比べて
高い周波数の交流電流を流すと、特願昭54−
42792号「磁気センサー」に示されているように、
信号磁界を交流バイアス磁界で振幅変調した形で
検出できる。第２の用途は、巻線８の両端を電流
値が未知な電気回路の一部に直列に接続してMR
ストライプ１を電流検出器として使用することで
ある。このように、巻線８を施すことによりMR
素子の性能が向上し、用途も拡大する。 FIG. 3 is a schematic side view showing another embodiment of the present invention. In this case, a winding 8 is provided on a part of the core 7 described in the first embodiment (FIG. 2). This winding 8 is used for the following two purposes.
The first use is as a bias magnetic field applying means. In other words, the direct current flowing through the winding 8 causes the magnetization within the MR element 1 to tilt approximately 45 degrees from the longitudinal direction (y direction) of the MR element due to the magnetic flux generated within the core, resulting in a signal magnetic field in the X direction. It can be made to have a linear response. Alternatively, if an alternating current with a higher frequency than the change in the signal magnetic field is passed through the winding 8,
As shown in No. 42792 "Magnetic Sensor",
The signal magnetic field can be detected in the form of amplitude modulation using an alternating current bias magnetic field. The second application is to connect both ends of the winding 8 in series to a part of an electric circuit where the current value is unknown.
The idea is to use stripe 1 as a current detector. In this way, by applying the winding 8, MR
Device performance will improve and applications will expand.
第４図ａ，ｂは、本発明の第３の実施例を示し
た概略側面図であり、第１、第２の実施例と比べ
てMRストライプ１がコア７の内側に形成されて
いる。９はコア７の接着部分である。 FIGS. 4a and 4b are schematic side views showing a third embodiment of the present invention, in which the MR stripe 1 is formed inside the core 7 compared to the first and second embodiments. 9 is the adhesive part of the core 7.
これらは、第１、第２の実施例で述べたよう
に、Ｘ方向信号磁界の磁気センサーとしての用途
のほかに、磁気テープや磁気デイスクなどの磁気
記憶媒体に対して磁気信号の書き込み再生を行う
磁気ヘツドとしての機能をもつ。 As described in the first and second embodiments, in addition to being used as a magnetic sensor for X-direction signal magnetic fields, these devices also write and reproduce magnetic signals on and from magnetic storage media such as magnetic tapes and magnetic disks. It functions as a magnetic head.
すなわち、第５図に示すように、磁気記憶媒体
１０に対して非磁性体６で充たされたギヤツプ部
外側を対向させて配置する。そして磁気記憶媒体
１０への磁化１１の書き込みは、巻線８に流す電
流によつてギヤツプ先端に生じる漏洩磁界によつ
て行う。この時MRストライプ１内の磁束は飽和
しているので、通常の磁気ヘツドと同様の書き込
みが行われる。そしてMRストライプ１は、磁気
記憶媒体１０内の磁化１１から生じる信号磁界の
再生ヘツドとして用いられる。ここで第４図ｂの
実施例は、同図ａに比べて、ギヤツプの大きさが
コアの内側GL１より外側GL２において、小さく
なつているので、信号磁界の書き込み及び再生分
解能を高くできる。 That is, as shown in FIG. 5, the outer side of the gap portion filled with the non-magnetic material 6 is arranged to face the magnetic storage medium 10. The magnetization 11 is written to the magnetic storage medium 10 by a leakage magnetic field generated at the tip of the gap by a current flowing through the winding 8. At this time, the magnetic flux within the MR stripe 1 is saturated, so writing is performed in the same way as in a normal magnetic head. The MR stripe 1 is then used as a read head for the signal magnetic field generated from the magnetization 11 within the magnetic storage medium 10. Here, in the embodiment shown in FIG. 4B, compared to FIG. 4A, the size of the gap is smaller on the outer side GL2 of the core than on the inner side GL1, so that the writing and reproducing resolution of the signal magnetic field can be improved.
第６図ａ，ｂは、本発明の他の用途を示したも
のである。第６図ａは、第２図に示した実施例に
おける非磁性体６の部分にｙ方向の穴１４を設
け、この穴１４に導線１３を通したものである。 Figures 6a and 6b illustrate another application of the invention. In FIG. 6a, a hole 14 in the y direction is provided in the non-magnetic material 6 in the embodiment shown in FIG. 2, and a conducting wire 13 is passed through the hole 14.
同図ｂは、第４図に示した実施例におけるコア
７で囲まれた部分に導線１３を通したものであ
る。これらの実施例では、導線１３に流れる電流
によつて生じる磁束をMRストライプ１の抵抗変
化として検出できる。 FIG. 4b shows a conductive wire 13 passed through the portion surrounded by the core 7 in the embodiment shown in FIG. In these embodiments, the magnetic flux generated by the current flowing through the conducting wire 13 can be detected as a change in resistance of the MR stripe 1.
従つて、これらは簡便な電流プローブとして用
いられる。 Therefore, they are used as simple current probes.
以上述べたように本発明によれば、従来より極
めて再生感度が高く、また広い用途を有する高性
能なMR素子を提供できる。 As described above, according to the present invention, it is possible to provide a high-performance MR element that has significantly higher reproduction sensitivity than the conventional one and has a wide range of uses.
第１図ａ，ｂ，ｃ，ｄはそれぞれMR素子の従
来例を示す斜視図、第２図は本発明の一実施例を
示す図でａは斜視図、ｂはそのAA′断面図、第３
図は本発明の第２の実施例を示す概略側面図、第
４図ａ，ｂ及び第５図は、本発明の第３の実施例
を示す概略側面図、第６図ａ，ｂはそれぞれ本発
明の他の応用例を示す斜視図である。
１……MRストライプ、２，２′……高透磁率
磁性体、３……端子、４……基板、５……非磁性
層、６……非磁性体、７……コア、８……巻線、
９……接着部分、１０……磁気記憶媒体、１１…
…磁化、１２……走向方向、１３……導線、１４
……穴。
Figures 1a, b, c, and d are perspective views showing conventional examples of MR elements, and Figure 2 is a view showing an embodiment of the present invention, in which a is a perspective view, b is a cross-sectional view AA' thereof, and Figure 2 is a perspective view showing an embodiment of the present invention. 3
The figure is a schematic side view showing the second embodiment of the present invention, Figures 4a, b and 5 are schematic side views showing the third embodiment of the invention, and Figures 6a and b are respectively FIG. 7 is a perspective view showing another application example of the present invention. 1...MR stripe, 2, 2'...High permeability magnetic material, 3...Terminal, 4...Substrate, 5...Nonmagnetic layer, 6...Nonmagnetic material, 7...Core, 8... winding wire,
9... Adhesive portion, 10... Magnetic storage medium, 11...
...Magnetization, 12...Strike direction, 13...Conducting wire, 14
……hole.
Claims (1)
率磁性体から成るコアの前記ギヤツプ上に、強磁
性薄膜より成り、前記ギヤツプ幅より広い幅を有
する短冊状磁気抵抗効果ストライプがそのギヤツ
プ両側の前記高透磁率磁性体と接するように形成
されていることを特徴とする磁気抵抗効果素子。 ２ 前記高透磁率磁性体の電気抵抗が前記磁気抵
抗効果ストライプの電気抵抗に比べて１桁以上大
きい特許請求の範囲第１項に記載の磁気抵抗効果
素子。 ３ 前記コアに巻線が施こされていない特許請求
の範囲第１項に記載の磁気抵抗効果素子。 ４ 前記コアに少なくとも一組の巻線が施こされ
ている特許請求の範囲第１項に記載の磁気抵抗効
果素子。[Scope of Claims] 1. A magnetic resistance strip made of a ferromagnetic thin film and having a width wider than the gap width is placed on the gap of a core made of a magnetic material with high electrical resistance and high magnetic permeability and having a gap of a constant width. A magnetoresistive effect element, characterized in that effect stripes are formed so as to be in contact with the high magnetic permeability magnetic material on both sides of the gap. 2. The magnetoresistive element according to claim 1, wherein the electrical resistance of the high permeability magnetic material is greater than the electrical resistance of the magnetoresistive stripe by an order of magnitude or more. 3. The magnetoresistive element according to claim 1, wherein the core is not wound. 4. The magnetoresistive element according to claim 1, wherein the core is provided with at least one set of windings.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55151804A JPS5775475A (en) | 1980-10-29 | 1980-10-29 | Magnetoresistance effect element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55151804A JPS5775475A (en) | 1980-10-29 | 1980-10-29 | Magnetoresistance effect element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5775475A JPS5775475A (en) | 1982-05-12 |
| JPH028468B2 true JPH028468B2 (en) | 1990-02-23 |
Family
ID=15526660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55151804A Granted JPS5775475A (en) | 1980-10-29 | 1980-10-29 | Magnetoresistance effect element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5775475A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2593594Y2 (en) * | 1991-04-12 | 1999-04-12 | 明子 稲木 | Current detector |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55130187A (en) * | 1979-03-30 | 1980-10-08 | Sony Corp | Magnetoelectric transducer |
| JPS55134969A (en) * | 1979-04-09 | 1980-10-21 | Toshiba Corp | Semiconductor device and manufacture thereof |
-
1980
- 1980-10-29 JP JP55151804A patent/JPS5775475A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55130187A (en) * | 1979-03-30 | 1980-10-08 | Sony Corp | Magnetoelectric transducer |
| JPS55134969A (en) * | 1979-04-09 | 1980-10-21 | Toshiba Corp | Semiconductor device and manufacture thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5775475A (en) | 1982-05-12 |
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