JPS5775426A - Ultraviolet rays irradiator for transcription - Google Patents

Ultraviolet rays irradiator for transcription

Info

Publication number
JPS5775426A
JPS5775426A JP15137980A JP15137980A JPS5775426A JP S5775426 A JPS5775426 A JP S5775426A JP 15137980 A JP15137980 A JP 15137980A JP 15137980 A JP15137980 A JP 15137980A JP S5775426 A JPS5775426 A JP S5775426A
Authority
JP
Japan
Prior art keywords
vessel
ultraviolet rays
wave length
ultraviolet ray
absorb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15137980A
Other languages
Japanese (ja)
Inventor
Tadatoshi Azuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15137980A priority Critical patent/JPS5775426A/en
Publication of JPS5775426A publication Critical patent/JPS5775426A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To obtain powerful mercury spectrum of 185 nm wave length having favorable efficiency by a method wherein an ultraviolet ray source is equipped in the first vessel, and it is fixed inside of the second vessel, and gas not to absorb the ultraviolet rays is made to flow for cooling. CONSTITUTION:The radiating part of the ultraviolet ray source 1 is equipped in the first vessel 2, and it is fixed inside of the second vessel 3. N2 gas not to absorb 180-200 nm wave length is introduced 4, and is discharged into the vessel 3. A window 6 for penetration of ultraviolet rays manufactured with a synthetic quartz is provided at a part of the vessel 3, and the ultraviolet ray are radiated outside of the vessel. A mask 7 applied with an electronic radioactive material is equipped facing to the window 6, electrons discharged from the mask 7 by excitation of ultraviolet rays are accelerated 9, those are controlled or condensed by magnetic field of a coil 19, and are introduced onto a wafer 8 applied with a photo sensitive material of polymethyl methacrylate, etc. By this constitution, the part of the light surce 1 positioning outside of the vessel 2 prevents excess rise of mercury vapor pressure to enable increase of electric input, and powerful mercury spectrum of 185 nm wave length can be obtained having favorable efficiency.
JP15137980A 1980-10-30 1980-10-30 Ultraviolet rays irradiator for transcription Pending JPS5775426A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15137980A JPS5775426A (en) 1980-10-30 1980-10-30 Ultraviolet rays irradiator for transcription

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15137980A JPS5775426A (en) 1980-10-30 1980-10-30 Ultraviolet rays irradiator for transcription

Publications (1)

Publication Number Publication Date
JPS5775426A true JPS5775426A (en) 1982-05-12

Family

ID=15517275

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15137980A Pending JPS5775426A (en) 1980-10-30 1980-10-30 Ultraviolet rays irradiator for transcription

Country Status (1)

Country Link
JP (1) JPS5775426A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0197286A2 (en) * 1985-03-29 1986-10-15 Fujitsu Limited A dry development method for a resist film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0197286A2 (en) * 1985-03-29 1986-10-15 Fujitsu Limited A dry development method for a resist film

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