JPH07254499A - Microwave plasma processing device - Google Patents

Abstract

PURPOSE:To prevent generation of ozone without radiating emission light at attemperament or decay time of an atom or a molecule caused at board processing time outside a vacuum vessel by arranging an ultraviolet ray cutoff means above a microwave introducing window. CONSTITUTION:A microwave generated from a magnetron 1 passes through a wave guide 2, and is introduced in a plasma chamber 7 kept in a vacuum through an ultraviolt ray cutoff plate 3 and a quartz microwave introducing window 4, and generates a magnetic field in the chamber 7 by an exciting solenoid 5. Gas inserted through a gas supply means 6 is turned into plasma by using an electron cyclotron resonance effect between the microwave and the magnetic field, and a surface of a board 9 arranged in a vacuum vessel 8 is etched. In this way, since near ultraviolet rays are not radiated outside the vessel 8 by the ultraviolet ray cutoff plate 3 arranged above the window 4, generation of ozone is prevented.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microwave plasma processing apparatus, and more particularly, to plasma generation using microwaves to perform plasma processing such as etching processing and film forming processing on a sample such as a semiconductor element substrate. The present invention relates to a suitable microwave plasma processing apparatus.

[0002]

2. Description of the Related Art A conventional microwave plasma processing apparatus is
For example, as described in JP-A-4-133322,
Microwaves oscillated from the microwave generation means pass through the waveguide and are introduced into the plasma chamber kept in vacuum through the microwave introduction window, and are introduced into the plasma chamber by the exciting solenoid that coaxially surrounds the plasma chamber. A magnetic field is generated, and the gas inserted through the gas supply means is converted into plasma with high efficiency by the electron cyclotron resonance effect with microwaves, and high density plasma is generated in a low vacuum to improve processing uniformity and speed. It was done like this.

[0003]

SUMMARY OF THE INVENTION The above-mentioned prior art is based on the light emission at the time of relaxation or decay of atoms or molecules generated during substrate processing.
In particular, light with a short wavelength in the ultraviolet region is emitted into the atmosphere outside the device through the microwave introduction window. In particular, recently, the microwave power tends to increase with the increase in the diameter of the object to be processed, and depending on the gas species, a large amount of light in the ultraviolet region is emitted due to atomic transition, and the amount of ozone generated increases. There was a problem that.

The object of the present invention is to prevent light having a short wavelength in the ultraviolet region from being emitted into the atmosphere, and by the emission of ultraviolet rays,
It is an object of the present invention to provide a microwave plasma processing apparatus which prevents oxygen in the atmosphere from becoming ozone.

[0005]

In order to achieve the above-mentioned object, a means for generating a microwave, a means for transmitting the microwave, and a magnetic field applied from the outer periphery of the microwave transmitting means are made of quartz. The microwave is introduced from the microwave introduction window to generate electron cyclotron resonance by the synergistic effect of the microwave and the magnetic field, and the surface is etched by converting the gas inserted through the gas supply means into plasma, or In a microwave plasma processing apparatus composed of a vacuum container in which a substrate on which a thin film is formed and an evacuation means, etc. are provided, ultraviolet shielding means is installed above the microwave introduction window made of quartz, and occurs during processing of the substrate. It has a structure that does not emit light when atoms or molecules are relaxed or decayed, especially light with a short wavelength in the ultraviolet region outside the vacuum container (into the atmosphere). That.

[0006]

[Function] By installing the ultraviolet blocking means above the microwave introduction window made of quartz, emission of light at the time of relaxation or decay of atoms or molecules generated during substrate processing, especially light of low wavelength of near ultraviolet (atomic transition) It is possible to prevent the release of ozone to the outside of the vacuum container (in the atmosphere), thereby preventing the generation of ozone.

[0007]

FIG. 1 shows an embodiment of the present invention.

FIG. 1 is a block diagram of an embodiment of a microwave plasma processing apparatus according to the present invention, and a case where the plasma processing is applied to etching processing will be described below.

Microwaves generated from a magnetron (microwave generation means) 1 pass through a waveguide 2 and are introduced into a plasma chamber 7 kept in a vacuum through an ultraviolet blocking plate 3 and a microwave introduction window 4. By generating a magnetic field in the plasma chamber 7 by the excitation solenoid 5 that coaxially surrounds the plasma chamber 7 and utilizing the electron cyclotron resonance effect with microwaves, to plasmaize the gas inserted through the gas supply means 6. , A vacuum container 8 in which a substrate 9 whose surface is to be etched is arranged, and a vacuum evacuation means 10.

As described above, since the ultraviolet blocking plate 3 is installed above the microwave introduction window 4, light emission during relaxation or decay of atoms or molecules generated during the processing of the substrate 9, particularly near ultraviolet (atomic transition) is low. The light of the wavelength is not emitted to the outside of the vacuum container 8, and thereby the generation of ozone can be prevented.

[0011]

As described above, according to the present invention, light emission at the time of relaxation or decay of atoms or molecules generated during substrate processing, particularly light having a short wavelength in the ultraviolet region is emitted outside the vacuum container (in the atmosphere). It is possible to prevent the generation of ozone.

[Brief description of drawings]

FIG. 1 is a configuration diagram of a plasma etching apparatus according to an embodiment of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Magnetron (microwave generation means), 2 ... Waveguide (microwave transmission means), 3 ... Ultraviolet shielding plate, 4 ... Microwave introduction window, 5 ... Excitation solenoid, 6 ... Gas supply means, 7 ... Plasma chamber , 8 ... Vacuum container, 9 ... Substrate,
10 ... Evacuation means.

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification number Office reference number FI Technical indication location C23F 4/00 G 8417-4K H01L 21/3065 21/31 (72) Inventor Takashi Fujii Shimomatsu, Yamaguchi Prefecture Higashi-Toyoi 794, Higashi-Toyo, Ltd. Inside the Kasado Plant, Hitachi, Ltd. (72) Inventor Motohiko Yoshikai 794 Higashi-Toyoi, Higashi-Toyoi, Kumamatsu, Yamaguchi

Claims (1)

[Claims] 1. A microwave generating means, a means for transmitting the microwave, and a magnetic field applied from the outer periphery of the microwave transmitting means, and the microwave is introduced through a microwave introduction window made of quartz. Electron cyclotron resonance is generated by the synergistic effect of a wave and a magnetic field, and the gas inserted through the gas supply means is turned into plasma to etch the surface or form a thin film on a substrate. And a vacuum evacuation means and the like, wherein an ultraviolet shielding means is installed above the microwave introduction window made of quartz.