JPH065386A - Electronic cyclotron resonance device - Google Patents

Abstract

PURPOSE:To provide an ECR device which irradiates an object with ions produced from plasma by ECR, wherein the density distribution of ions is made uniform by introducing microwaves with uniform power density distribution into a vacuum vessel 1 on which a magnetic field is impressed. CONSTITUTION:In a wave-guide tube 14, microwaves are transmitted having eccentric power density distribution, and upon making the power density distribution uniform by a wave emitting power density unifirming means (phase shifter 15), the waves are cast into a vacuum vessel 1 from a wave incident window 2. Thereby the produced density distribution of plasma particles in the plasma generating region (ECR region 13) is made uniform by the electron cyclotron resonance caused by the electric field due to the cast microwaves, the magnetic field impressed to the inside of the vacuum vessel 1, and the gas to be processed which was introduced into the vacuum vessel 1. Thus a processing such as etching can be done with high quality with no risk of generating eccentric ion irradiation to the object 12.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron cyclotron resonance apparatus for performing etching, deposition, sputtering, CVD, etc. in the field of manufacturing semiconductor parts such as high density integrated circuits.

[0002]

2. Description of the Related Art As is well known, an electron cyclotron resonance apparatus has three elements, a magnetic field, a high frequency electric field, and electrons in processing gas atoms, which are introduced by introducing an electric field and a processing gas into a vacuum container to which a magnetic field is applied. To perform etching, deposition, sputtering, CVD, etc. by irradiating the irradiated object with the ions and radicals generated at that time by converting the processing gas into plasma by Electron Cyciotron Resonance (ECR) You can Electron cyclotron resonance device (hereinafter, E
As one of the conventional techniques using a CR device), an ECR etching device for etching a semiconductor substrate by an ECR device will be described below as an example.
ECR etching apparatus 30 shown in FIG. 14 as a schematic diagram
Around the vacuum container 1, the magnetic coils 10a and 10b for applying a magnetic field in the vacuum container 1 are
Is arranged concentrically with the central axis of the vacuum container 1, and a microwave introduction window 2 is provided at the upper end on the central axis of the vacuum container 1 to guide the microwave from the microwave generator 5 into the vacuum container 1. Tube 14 (consisting of each section 6 to 9 that constitutes the waveguide)
Are connected. Support base 1 installed in the vacuum container 1
A substrate 12 for etching is placed on the substrate 1. The inside of the vacuum container 1 is evacuated from an exhaust port 4 to maintain a predetermined vacuum state. The magnetic coils 10a and 10b for applying a magnetic field in the vacuum chamber 1 are formed to have the same specifications, and since a DC exciting current is passed in the same direction, a uniform magnetic flux density in the radial direction of each magnetic coil 10a, 10b. Then, a magnetic field is applied in the central axis direction in the vacuum container 1.

A waveguide 14 for transmitting microwaves from a microwave generator 5 is connected to a microwave introduction window 2 for applying an electric field in the vacuum container 1. The waveguide 14 passes through the corner waveguide 6, the step converter 7, the circular polarization converter (polarizer) 8, and the horn antenna 9 to introduce the microwave propagating from the microwave generator 5 into the rectangular waveguide. Connected to 2. As for the microwave propagating in the waveguide 14, as shown in FIG. 15, the linearly polarized rectangular mode microwave (FIG. 15A) is changed in the traveling direction to the right angle direction by the corner waveguide 6, and the step converter 7 is used. Is converted into a linear polarization circular mode (Fig. 15B) by a circular polarization converter (polarizer) 8 and converted into a circular polarization circular mode (Fig. 15C) by the horn antenna 9 and the microwave introduction window 2 A microwave is radiated into the vacuum container 1 through the. When the processing gas is introduced from the gas introduction port 3 into the vacuum container 1 to which the magnetic field and the electric field are applied in this way, the processing gas is turned into plasma in the ECR region 13 by electron cyclotron resonance, and plasma particles such as ions and radicals are generated. To be done. The plasma particles flow in the direction of the lines of magnetic force, irradiate the substrate 12 placed on the support 11, and the substrate 12 can be etched.

[0004]

In the ECR etching apparatus 30, it is important that the temporal and spatial particle distribution of the plasma particles generated in the ECR region 13 is uniform, and if this distribution is non-uniform, As shown in FIG. 16, a high ion density region and a low ion density region are generated in the vacuum container 1, and an electric field gradient is generated between them, which should be incident on the surface of the substrate 12 in the direction of magnetic force perpendicular to the surface. Ions have various directions according to the electric field gradient and have a substrate 12
As a result, the etching reaction is promoted not only in the direction of the magnetic force lines, but the processing accuracy deteriorates, such as the etching progresses in the inclining direction as shown in the figure. Further, the non-uniformity of the particle distribution causes a potential difference resulting from the difference in the ion distribution density on the substrate 12 as shown in FIG. 17, causing a current to flow on the substrate 12 and destroying the elements formed on the substrate 12. . The above is a problem when the ECR device is used as an etching device. However, the ECR device is used for CVD (Chemical Vapor Deposit).
When it is used for ion), there is a problem in that the film thickness is uneven and uniform film formation is not achieved. When the magnetic flux density in the ECR area 13 is uniform, the nonuniform density distribution of the plasma particles occurs in proportion to the power density of the microwaves introduced into the ECR area 13. Therefore,
The power density of the microwaves introduced through the microwave introduction window 2 must be uniform. However, the power density distribution of microwaves radiated from the microwave introduction window into the vacuum container 1 is not uniform in the opening surface, and the above-mentioned problems occur. That is, as shown in FIG. 15B, the power density distribution in the section A-B or the section A′-B ′ in the waveguide section of the microwave propagating in each part in the waveguide 8 is the central axis. Larger in the vicinity, smaller as it approaches the pipe wall. The present invention eliminates the non-uniformity of the power density distribution of microwaves introduced into the vacuum container as described above and makes the density distribution of plasma particle generation uniform, so that the microwave power density distribution from the microwave introduction window is used. An object of the present invention is to provide an electron cyclotron resonance device provided with a homogenizing means.

[0005]

In order to achieve the above-mentioned object, the means adopted by the present invention is to apply a magnetic field by a magnetic field generator in a vacuum container and to use a microwave introduction window provided in the vacuum container to provide a microwave. A wave is introduced to apply an electric field into the vacuum vessel, the processing gas introduced into the vacuum vessel is turned into plasma by electron cyclotron resonance by the magnetic field and the electric field, and the ions and radicals generated by the plasma are put into the vacuum vessel. In the electron cyclotron resonance apparatus for irradiating the object to be irradiated arranged in the above, microwave radiation power density uniform means for uniformizing radiation power density distribution of microwaves introduced into the vacuum container through the microwave introduction window is provided. Is configured as an electron cyclotron resonance device. The microwave radiation power density uniforming means can be provided upstream of the microwave introduction window in the microwave traveling direction, and the first means for realizing this is connected to the microwave introduction window. The electron cyclotron resonance device is characterized in that phase changing means for changing the dielectric constant in the radial direction of the waveguide is provided.

Further, the second means for providing the means for uniforming the microwave radiation power density on the upstream side of the microwave introduction window in the microwave advancing direction is provided with a plurality of means in the waveguide connected to the microwave introduction window. The microwave radiation power density equalizing means provided with the coaxial waveguide is provided as an electron cyclotron resonance device. The third means for providing the microwave radiation power density uniform means on the upstream side of the microwave introduction window in the microwave traveling direction is the center position of the waveguide opening face connected to the microwave introduction window. The electron cyclotron resonance device is characterized in that a shielding means for shielding the direct radiation of the microwave from the central position is provided. The third means is a shielding means in which a waveguide opening surface is formed on a horn antenna, and a conical conductor having an inclined surface parallel to the taper angle of the horn antenna is arranged on the central axis of the horn antenna, or a waveguide. It is realized as a shielding means in which a dielectric body having a conical space having a total reflection angle with respect to microwaves is arranged at the center position of the tube opening surface. Further, the means for uniformizing the microwave radiation power density can be realized as a fourth means provided at the position of the microwave introduction window, and a conductor disk is provided at the center position of the waveguide opening surface connected to the microwave introduction window. The electron cyclotron resonance device is characterized in that the waveguide openings are arranged in a ring shape.

[0007]

According to the present invention, the microwaves transmitted through the waveguide with a biased power density distribution are made uniform by the microwave radiation power density uniforming means, and then the microwave introduction window is provided. In the plasma generation region (ECR region) by electron cyclotron resonance by the electric field by the microwave, the magnetic field applied in the vacuum container, and the processing gas introduced in the vacuum container The distribution of the generation density of the plasma particles is made uniform, the irradiation of the object to be irradiated with ions and the like is not biased, and processing such as etching can be performed with high quality. The microwave radiation power density uniform means is
It is realized as first to third means provided upstream of the microwave introduction window in the microwave traveling direction. According to the first means, a part of the microwave radiated from the microwave introduction window into the vacuum container is reflected by the plasma, and a standing wave is formed in the waveguide with the plasma as a reflection end.
By disposing a dielectric in the region at the center of the waveguide and shifting the phase of the standing wave in the region of high power density, the microwave absorptivity of the plasma is made uniform. That is, since the absorption rate of microwave power of plasma differs depending on the phase of the standing wave in the waveguide, the phase of the standing wave in the high power density region can be absorbed by placing the dielectric in the center of the waveguide. By shifting to a phase with a low rate, the absorption rate of microwave power to plasma is made uniform, and the generation density of plasma particles is also made uniform. Further, according to the second means, a plurality of coaxial waveguides are arranged in the waveguide in contact with the microwave introduction window, and microwave radiation into the vacuum container is emitted from the multiple coaxial antenna. As a result, a uniform microwave power density can be obtained. That is, since the coaxial waveguide has a smaller cross-sectional diameter than the circular waveguide that transmits microwaves of the same frequency, a plurality of coaxial waveguides are arranged in the area of the waveguide opening surface. By selecting the inner diameter of the coaxial waveguide and the spacing between the coaxial waveguides, the microwaves are dispersed and radiated at the opening surface of the waveguide, and the microwaves are introduced from the microwave introduction window into the vacuum container. Make microwave introduction uniform.

Further, according to the third means, the microwave radiated from the opening surface of the waveguide is provided by providing the shielding means at the central position where the power density is high in the waveguide which is in contact with the microwave introduction window. The microwave is radiated directly from the peripheral part without the shielding means, and the microwave is radiated from the peripheral part from the shielded center position. By selecting the diameter of the shielding means, a microwave with a uniform power density can be obtained. Radiation is emitted. The shielding means is realized by forming an opening surface of a waveguide in a horn antenna and arranging a conical conductor having an inclined surface parallel to the taper angle of the horn antenna at a center position where the power density of the horn antenna is high. And
Alternatively, it is realized by disposing a dielectric body having a conical space having a total reflection angle with respect to microwaves at the center position of the opening surface of the waveguide. According to the fourth means for providing the microwave radiation power density uniforming means at the microwave introduction window position, the conductor disk is arranged at the center position of the waveguide opening surface, and the waveguide opening is formed in a ring shape. As for the microwave radiation into the vacuum chamber, the direct radiation from the center position of the waveguide is shielded and is directly radiated from the peripheral portion, and the microwave from the peripheral portion is diffracted from the shielded central position. Radiation, and by selecting the diameter of the conductor disk, microwave radiation with uniform power density as a whole is achieved.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the accompanying drawings.
An embodiment embodied as an etching apparatus will be described.
The present invention is provided for understanding. The following embodiments are examples of embodying the present invention and do not limit the technical scope of the present invention. Further, in each of the following embodiments, the same elements as those of the conventional example are designated by the same reference numerals, and detailed description thereof will be omitted. 1 is a schematic view of an ECR etching apparatus according to the first embodiment of the present invention, and FIG. 2 is an explanatory view for explaining the action of changing the standing wave phase according to the first embodiment,
FIG. 3 is a graph showing the relationship between the phase of the reflected wave from the microwave plasma and the reflectance according to the first example. The ECR etching apparatus 31 shown in FIG. 1 has the same structure as the structure shown in the conventional example except for the structure for introducing microwaves. That is, in order to eliminate the bias of the plasma particle generation density due to the non-uniformity of the power density distribution of the microwaves introduced into the vacuum vessel 6 which is a problem of the conventional configuration, the induction connected to the microwave introduction window 2 is eliminated. The wave tube 8 is provided with a microwave radiation power density uniforming means. As shown in FIG. 1, the microwave radiation power density uniforming means according to the present embodiment has a horn antenna 9 in which a waveguide 14 connected to the microwave introduction window 2 has a diameter expanded toward the microwave introduction window 2. A phase shifter 15 in which a dielectric is formed in a columnar shape is arranged at the center position. The phase shifter 15 creates a uniform power density distribution in a state where the power density distribution of microwaves transmitted in the waveguide 14 is not uniform between the center position and the vicinity of the tube wall. From vacuum container 1
It acts to radiate inside. The operation of the phase shifter 15 will be described below.

A part of the microwave radiated from the microwave introduction window 2 into the vacuum chamber 1 is reflected by the plasma, and a standing wave is formed in the waveguide 14 with the plasma as a reflection end. At this time, there is a correlation between the phase of the reflected wave and the absorption rate of the microwave into the plasma, and the microwave is most efficiently absorbed where the reflectance becomes minimum as shown in FIG. That is, depending on the phase of the standing wave in the waveguide 14,
The microwave power of plasma will be differently absorbed. Therefore, by changing the phase of the standing wave between the central position and the peripheral position of the waveguide 14, the absorption rate of the microwave power to the plasma can be made uniform. Therefore,
If a dielectric is placed in the center of the waveguide 14 where the power density is high, the phase of the standing wave can be shifted to a phase with a low microwave absorptance as shown in FIG. The microwave power density can be made uniform as a whole. As shown in FIG. 1, the microwave radiating power equalizing means using the phase shifter 15 has a phase shifter 15 in which a dielectric is formed in a columnar shape at a central position on the upstream side in the microwave traveling direction from the opening surface of the horn antenna 9. Are arranged and the phase of the standing wave in the waveguide 14 is shifted in the central region a. Since the magnitude of the phase shift is proportional to the length L of the phase shifter 15,
By optimally selecting the diameter a and the length L of the phase shifter 15, a uniform plasma density distribution can be obtained in the plane parallel to the substrate 12 in the ECR region 13.

Next, a second embodiment of the present invention will be described with reference to FIGS. FIG. 4 shows the ECR shown in FIG.
Microwave introduction window 2 having a different configuration from the etching device 31
FIG. 5 is a schematic view showing a configuration in which a plurality of coaxial waveguides are arranged in the horn antenna 9 by extracting the peripheral portion of the above, and FIG. 5 is a plan view of an opening surface in contact with the microwave introduction window. Figure 4,
In FIG. 5, a plurality of coaxial waveguides 16 and 16 are arranged in a horn antenna 9 formed at a position where the waveguide 14 is connected to the microwave introduction window 2 to form a multiple coaxial antenna. ing. Generally, the size of the cross section of a waveguide that propagates microwaves of the same frequency is smaller in a coaxial waveguide than in a circular waveguide. Therefore, a plurality of coaxial waveguides 16 should be arranged in the horn antenna 9. You can A plurality of coaxial waveguides 16 arranged in the horn antenna 9 as described above
The microwave radiated from the waveguide is radiated from the space between each inner shaft conductor 16a and the outer conductor 16b, and the diffracted wave from the radiation space part wraps around the inner shaft conductor 16a. Microwaves propagating in 14 with a non-uniform power density distribution are radiated with a uniform power density distribution for each coaxial waveguide 16 by optimizing the diameter of the inner shaft conductor 16a. Therefore, by appropriately selecting and arranging the intervals c between the plurality of coaxial waveguides 16, the microwaves homogenized by the respective coaxial waveguides 16 are uniformly distributed in the vacuum container 1 through the microwave introduction window 2. Emitted after being converted to E
In the CR region 13, a uniform plasma density distribution can be obtained in the plane parallel to the substrate 12.

Next, a third embodiment and a fourth embodiment of the present invention will be described with reference to FIGS. 6, 7 and 8 and 9. The configurations according to the third embodiment and the fourth embodiment have the waveguide 1 connected to the microwave introduction window 2 in order to make the power density distribution of the microwave introduced into the vacuum container 1 uniform.
A horn antenna 9 formed in the opening surface of the waveguide 14 is provided with a means for uniforming the microwave radiation power density in 4
The shielding means is placed at the center position where the power density distribution of the microwave radiated from the center is large, and the direct radiation from the center position is shielded by the direct radiation from the peripheral part and the diffracted wave to the shielded center position. The electric power density of the radiated microwaves is made uniform. First, the third embodiment will be described.
FIG. 6 is a schematic diagram in which the peripheral portion of the microwave introduction window 2 having a different configuration from the ECR etching apparatus 31 shown in FIG. 1 is extracted, and the horn antenna 9 portion is shown in cross section. FIG. 7 is a plan view of the opening surface of the horn antenna, and FIG. 8 is an explanatory view showing the uniformization of the power density distribution. In FIG. 6, a conical conductor 17 is installed at the center of the horn antenna 9, and this serves as a shielding means for shielding the direct radiation of microwaves from the center of the horn antenna 9. Since the conical conductor 17 is formed on the conical inclined surface parallel to the inclined surface of the horn antenna 9, it can be regarded as a coaxial waveguide that spreads on the taper of the horn antenna 9, and the circular waveguide mode of the previous stage can be considered. Since it is converted to match the circular coaxial waveguide mode, the generation of reflected waves can be suppressed low. The microwave in the horn antenna 9 formed in the coaxial waveguide propagates in the space formed in the ring shape between the conical conductor 17 and the wall surface of the horn antenna 9, and contacts the microwave introduction window 2. It is radiated from the opening surface into the vacuum container 1. Since the opening surface is formed as shown in FIG. 7, the microwave radiation is shielded at the center position where the conical conductor 17 is present, but since the diffraction wave from the surroundings wraps around this center position, FIG.
The microwaves propagating in the waveguide 14 with the power density distribution as shown in (a) are shielded by the conical conductor 17 at the center position where the power density is high, and as a result, as shown in FIG. The density distribution is almost uniform on the opening surface.

Next, a fourth embodiment will be described. Figure 9
Is a schematic diagram in which the peripheral portion of the microwave introduction window 2 having a different configuration from the ECR etching device 31 shown in FIG. 1 is extracted,
The horn antenna 9 portion is shown in cross section. FIG. 10 is a plan view of the opening surface of the horn antenna, and FIG. 11 is an explanatory view showing reflection of microwaves depending on the incident angle on the dielectric surface.
In FIG. 6, the horn antenna 9 of the microwave introduction window 2
A dielectric 19 in which a conical space 18 is formed is installed at a position where it is connected to the opening surface of the. The dielectric 19 is made of quartz, and a conical space 18, which is hollowed out in a conical shape with the traveling direction of the microwave at the top, is formed at the center position on the microwave introduction window 2 side. The microwave that has propagated to the position has a dielectric 19 and a conical space 18
The radiation from the center position of the microwave is blocked because it is reflected at the boundary surface of and. The microwave reflecting action of the conical space 18 will be described with reference to FIG. This configuration utilizes the optical properties of microwaves, and the microwaves that have propagated in the high refractive index portion N1 (refractive index n ₁ ) will propagate to the low refractive index portion N2 (refractive index n ₂ ). Then, if the incident angle with respect to the normal line of the interface between N1 and N2 is larger than the critical angle θ _c as shown in FIG. 11A, the microwave is reflected at the interface. When the incident angle is smaller than the critical angle θ _c , as shown in FIG. 11B, the microwave is refracted and enters the portion N1 having a large refractive index and the portion N2 having a small refractive index. The critical angle θ _c is expressed by the following equation (1). θ _c = sin ⁻¹ (n ₂ / n ₁ ) ... (1)

In this embodiment, the high refractive index portion N1 is the dielectric 19 and the low refractive index portion N2 is the conical space 18. The dielectric 19 is formed of quartz as described above, and the conical space 18 is the atmosphere. Therefore, since the refractive index of quartz is 1.94 and the refractive index of the atmosphere is 1, the center of the conical space 18 is shown in FIG. The cone angle θ from the axis is (2) below
If formed so as to satisfy the formula, the microwave incident on the central position of the dielectric 19 is reflected by the conical space 18. [theta]> 90- [theta] _c ([theta] _c = 59 [deg.]) (2) Therefore, the conical space 18 serves as a microwave shielding means and is reflected to the surroundings at the center position of the microwave propagated from the waveguide 14. Therefore, the horn antenna 9 shown in FIG.
The microwave is transmitted from the microwave transmitting portion formed in a ring shape in the opening of the, and the diffraction wave from the surroundings wraps around the conical space 18 portion at the center position. By optimally selecting the diameter of the conical space 18, as shown in FIG.
The microwave having a large power density propagating in the inside of the inside can have a uniform power density distribution by suppressing the part of the central position where the power density is large as shown in FIG. 8B.

Next, a fifth embodiment of the present invention will be described with reference to FIGS.
3 will be used for the explanation. In the structure according to the fifth embodiment, in order to make the power density distribution of microwaves introduced into the vacuum container 1 uniform, microwave radiation power density uniform means is provided on the opening surface of the waveguide 14. The shielding means is arranged at the center position where the power density distribution of microwaves radiated from the horn antenna 9 formed in the opening surface of the waveguide 14 is large,
The direct radiation from the central position is shielded, and the power density of the microwaves radiated by the direct radiation from the peripheral part and the diffracted wave to the central position that is shielded is made uniform. 12
Is a schematic diagram in which the peripheral portion of the microwave introduction window 2 having a different configuration from the ECR etching device 31 shown in FIG. 1 is extracted,
The horn antenna 9 portion is shown in cross section. FIG. 13 is a plan view of the opening surface of the horn antenna. In FIG. 12 and FIG. 13, since the conductor disk 20 is arranged at the center position of the opening surface of the horn antenna 9, the microwave introduction window 2 has a ring-shaped opening for transmitting microwaves.
Since the microwave is introduced into the vacuum chamber 1 by the direct wave from the ring-shaped opening and the diffracted wave from the ring-shaped opening to the central position shielded by the conductor disk 20,
As shown in FIG. 8A, the microwave propagating in the waveguide 14 in the state where the power density at the center position is large has the result that the center position where the power density is large is shielded by the conductor disk 20. As shown in FIG. 8 (b), the power density at the center position can be suppressed and uniformized for introduction.

[0016]

As described above, according to the present invention, a microwave radiated power density uniforming means is used for a microwave transmitted in a mode having a bias of the power density distribution in the waveguide. After being homogenized, the electric field due to the microwave with a uniform power density distribution, the magnetic field applied in the vacuum container, and the introduction into the vacuum container are radiated from the microwave introduction window into the vacuum container. The distribution of the generation density of plasma particles in the plasma generation region (ECR region) is made uniform by electron cyclotron resonance due to the treated gas, and the irradiation of the object is not biased in the irradiation of ions and the like, and the processing such as etching is enhanced. It can be carried out with quality.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing the configuration of an ECR etching apparatus according to a first embodiment of the present invention.

FIG. 2 is an explanatory diagram showing an operation of changing the phase of a standing wave according to the first embodiment.

FIG. 3 is a graph showing the relationship between the phase of a standing wave and the reflectance from plasma according to the first example.

FIG. 4 is a schematic diagram showing a configuration near a microwave introduction window of an ECR etching apparatus according to a second embodiment of the present invention.

5 is a plan view of an opening surface in the configuration shown in FIG.

FIG. 6 is a schematic diagram showing a configuration near a microwave introduction window of an ECR etching apparatus according to a third embodiment of the present invention.

FIG. 7 is a plan view of an opening surface in the configuration shown in FIG.

FIG. 8 is a graph showing a power density distribution (a) in the waveguide and a power density distribution (b) at the opening surface.

FIG. 9 is a schematic diagram showing a configuration near a microwave introduction window of an ECR etching apparatus according to a fourth embodiment of the present invention.

FIG. 10 is a plan view of an opening surface in the configuration shown in FIG.

FIG. 11 is an explanatory diagram illustrating an operation of the configuration shown in FIG. 9.

FIG. 12 is a schematic diagram showing a configuration near a microwave introduction window of an ECR etching apparatus according to a fourth embodiment of the present invention.

13 is a plan view of an opening surface in the configuration shown in FIG.

FIG. 14 is a schematic diagram showing a configuration of an ECR etching apparatus according to a conventional example.

FIG. 15 is a graph showing a mode (a) in each part in the waveguide and a power density distribution of each part.

FIG. 16 is an explanatory view showing deterioration of processing accuracy due to bias of microwave power density distribution.

FIG. 17 is an explanatory diagram showing destruction of an object to be irradiated due to biased distribution of microwave power density.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Vacuum container 2 ... Microwave introduction window 3 ... Processing gas introduction port 9 ... Horn antenna 10a, 10b ... Magnetic coil 12 ... Substrate (object to be irradiated) 14 ... Waveguide 15 ... Phase shifter (dielectric constant changing means) 16 ... coaxial waveguide 17 ... conical conductor (shielding means) 18 ... conical space (shielding means) 19 ... dielectric 20 ... conductor disk

Continuation of the front page (51) Int.Cl. ⁵ Identification code Office reference number FI technical display location G01R 33/64 H01L 21/302 B 8518-4M

Claims (8)

[Claims] 1. A magnetic field generated by a magnetic field generator is applied to the vacuum container, and a microwave is introduced through a microwave introduction window provided in the vacuum container to apply an electric field to the vacuum container.
The processing gas introduced into the vacuum container is turned into plasma by electron cyclotron resonance by the magnetic field and electric field,
In an electron cyclotron resonance device for irradiating an object to be irradiated arranged in a vacuum container with ions and radicals generated by the plasma, a radiation power density distribution of microwaves introduced into the vacuum container through the microwave introduction window is made uniform. An electron cyclotron resonance device comprising means for uniforming microwave radiation power density. 2. The electron cyclotron resonance device according to claim 1, wherein the means for uniformizing the microwave radiation power density is provided upstream of the microwave introduction window in the microwave traveling direction. 3. A magnetic field generated by a magnetic field generator is applied to the vacuum container, and a microwave is introduced through a microwave introduction window provided in the vacuum container to apply an electric field to the vacuum container.
The processing gas introduced into the vacuum container is turned into plasma by electron cyclotron resonance by the magnetic field and electric field,
In an electron cyclotron resonance apparatus for irradiating an object to be irradiated, which is arranged in a vacuum container, with ions and radicals generated by the plasma, a phase change that changes the dielectric constant in a radial direction inside a waveguide connected to the microwave introduction window. An electron cyclotron resonance device comprising means. 4. A magnetic field generated by a magnetic field generator is applied to the vacuum container, and a microwave is introduced from a microwave introduction window provided in the vacuum container to apply an electric field to the vacuum container.
The processing gas introduced into the vacuum container is turned into plasma by electron cyclotron resonance by the magnetic field and electric field,
In an electron cyclotron resonance device for irradiating an object to be irradiated arranged in a vacuum container with ions and radicals generated by the plasma, a plurality of coaxial waveguides are arranged in a waveguide connected to the microwave introduction window. An electron cyclotron resonance device comprising microwave radiation power density equalizing means. 5. Inside the vacuum container, a magnetic field is applied to the inside of the vacuum container, and a microwave is introduced through a microwave introduction window provided in the vacuum container to apply an electric field into the vacuum container. In the electron cyclotron resonance apparatus, the process gas introduced into the plasma is converted into plasma by electron cyclotron resonance due to the magnetic field and the electric field, and the ions and radicals generated by the plasma are irradiated to an object to be irradiated arranged in a vacuum container. An electron cyclotron resonance device, characterized in that a shielding means for shielding direct radiation of microwaves from the center position is provided at the center position of the opening surface of the waveguide connected to the introduction window. 6. The shielding means according to claim 5, wherein the waveguide opening surface is formed on a horn antenna, and a conical conductor having an inclined surface parallel to a taper angle of the horn antenna is arranged on a central axis of the horn antenna. Electron cyclotron resonance device. 7. The electron cyclotron resonance apparatus according to claim 5, wherein the shielding means has a dielectric member arranged at the center of the opening surface of the waveguide and having a conical space having a total reflection angle with respect to microwaves. 8. A magnetic field generated by a magnetic field generator is applied to the inside of the vacuum container, and a microwave is introduced through a microwave introduction window provided in the vacuum container to apply an electric field to the inside of the vacuum container. In the electron cyclotron resonance apparatus, the process gas introduced into the plasma is converted into plasma by electron cyclotron resonance due to the magnetic field and the electric field, and the ions and radicals generated by the plasma are irradiated to an object to be irradiated arranged in a vacuum container. An electron cyclotron resonance device characterized in that a conductor disk is arranged in the center position of the waveguide opening surface connected to the introduction window, and the waveguide opening is formed in a ring shape.