JPS6114722A - Manufacturing device of semiconductor - Google Patents

Abstract

PURPOSE:To simplify the structure of the titled apparatus and to increase etching speed enlarging plasma density by a method wherein a source of light, which projects the light with wavelength of promote ionization of reactive gas, is installed. CONSTITUTION:A torus state quartz tube 8 is installed between discoid electrode 2 and 3. Mercury-vapor is enclosed in this quartz tube 8 and a reflection film 8' are formed in the interior of this outside. This quartz tube 8 itselft has not any electrode to discharge, however, mercury is excited and radiates ultraviolet ray by means of field effect generated between the electrode 2 and 3. This ultraviolet ray is irradiated evenly to the inside of the quartz tube through the reflection film 8' and then promotes ionization of reactive gas such as CCl4 and the like which is introduced a reaction chamber 1. By this fact, plasma density in the reaction chamber 1 evenly is raised, thus etching speed is increased. If the gases, which is enclosed in the quartz tube 8, discharge light whose wavelength adsorbs discharged energy and promotes ionization of the reactive gas, any gas may be used other than mercury.

Description

TECHNICAL FIELD OF THE INVENTION The present invention relates to semiconductor manufacturing equipment, and more particularly to a semiconductor manufacturing equipment for performing reactive ion etching (PIF) on semiconductor devices.

[Technical background of the invention]

An example of a conventional RIE apparatus is shown in FIG. A pair of north poles 2 and 3 are provided within the reaction chamber 1 .

These electrodes have a disk shape, for example, and the electrode 2 is connected to the main body of the reaction chamber 1 and grounded. On the other hand, the electrode 3 is connected to a matching network 4 for impedance matching.
It is connected to the RF power supply 5 via. The semiconductor device 6 to be etched is placed on the surface of the electrode 3, and a reactive gas such as CCJI 4 is introduced into the reaction chamber 1 through the inlet/outlet pipe 7 to reduce the pressure.

A discharge occurs between the electrodes 2 and 3 due to the frequency voltage generated by the RF power source 5, and the reactive gas is ionized to become a plasma state. Under such conditions, the surface of the semiconductor device 6 is etched.

(Problems with Background Art) In order to increase the etching rate in RIFHN as described in 1, there are two methods: increasing the electric field of the electrode darkness, and increasing the plasma density. However, since the former method applies a strong impact to the semiconductor device 6, the former method is usually adopted. Conventionally, in order to close this plasma secret turtle,
One method is to apply an external magnetic field to change the motion of electrons from linear motion to linear motion, increasing the probability of collision with atoms.

In order to create such a magnetic field, multiple strong magnetic poles are set externally, but in this case, if the magnetic flux density distribution is not uniform, the plasma density distribution will be uneven, resulting in etching. This will also cause non-uniformity. However, in order to create a uniform magnetic field, it is necessary to arrange a plurality of specially shaped magnets together, which always causes problems. Alternatively, as shown in Fig. 4, there is a method in which the magnet 12 is moved in the direction of the arrow 1 without etching, and the average magnetic field is made uniform throughout the entire etching time. m u l; L very much? ! !
Becomes 11.

[Purpose of the invention]

Therefore, the present invention (a semiconductor for etching) which can increase the plasma density and increase the etching rate while maintaining a uniform plasma density distribution in the reaction chamber with a <1 structure. The purpose is to provide IJ & equipment.

[Summary of the invention]

The present invention is characterized by a reaction chamber that accommodates a semiconductor device, a gas introduction device that introduces a reactive gas into the reaction chamber for J-bunking the semiconductor device, and a method that generates active ionic species from the reactive gas. In the semiconductor manufacturing S4 C, which includes a pair of electrodes for generating a discharge, a light source device that irradiates the reaction chamber with light of a wavelength that promotes the ionization of the reactive gas is installed to reduce the plasma density in the reaction chamber. The point is that the uniform distribution is kept high and the etching speed is increased.

[Embodiments of the invention]

The present invention will be explained below based on the embodiment shown in FIG.

In FIG. 1, the same components as those in the conventional example shown in FIG. 4 are designated by the same reference numerals, and the explanation thereof will be omitted. Between the disk-shaped electrodes 2 and 3, an annular six-tube tube 8 (only a cross section is shown in FIG. 1) is provided. This quartz tube 8 is filled with mercury vapor and has a reflective film 8' formed on its outer inner surface. Although the quartz tube 8 itself does not have any electrodes for discharge, the electric field generated between the electrodes 2 and 3 excites the mercury and emits ultraviolet light. This ultraviolet light is uniformly irradiated to the inside of the quartz tube by the reflective film 8' and introduced into the reaction chamber 1 to promote the ionization of the reactive gas such as /jCCfJ4.

This uniformly increases the plasma density within the reaction chamber 1 and increases the etching rate. The gas sealed in the quartz tube 8 may be any gas other than mercury as long as it emits light with a wavelength that absorbs discharge energy and promotes ionization of the reactive gas.

Another embodiment of the invention is shown in FIGS. 2 and 3. In these figures, the same components as those in the embodiment shown in FIG. 1 are denoted by the same reference numerals, and the explanation thereof will be omitted. In the embodiment shown in FIG. 2, a window 9 is opened in the reaction chamber 1, and ultraviolet light is irradiated into the reaction chamber 1 from a mercury lamp 10 provided outside the window 9. In addition, in the configuration example shown in FIG. 3, a window 9 is opened in the reaction chamber 1, a quartz tube 11 filled with mercury is provided outside the window 9, and an RFIi source 5 is provided.
The ^-frequency voltage generated by ' causes a discharge in this quartz tube, generates ultraviolet light, and irradiates the inside of the reaction chamber 1. In both cases, the light source is placed outside the reaction chamber, so the intensity of ultraviolet light inside the reaction chamber is weaker than in the previous example. Furthermore, in the embodiment shown in FIG. 2, since the mercury lamp 10 uses a filament, there is a drawback that the stability of the emitted light intensity is lacking.In the embodiment shown in FIG. There is a disadvantage that a new RF power source 5' is required. The embodiment shown in FIG. 1 described above can generate about 10 times the ultraviolet light intensity compared to the embodiments shown in FIGS. 2 and 3 without requiring an extra power source, and has several Because it is possible to obtain a 10% higher plasma density,
This is a more preferred embodiment.

(Effects of the Invention) As described above, according to the present invention, in the semiconductor manufacturing apparatus for reactive ion etching, the ionization of the reactive gas is promoted to increase the plasma density, so that the etching speed can be increased with a simple structure. becomes possible.

[Brief explanation of the drawing]

FIG. 1 is an explanatory diagram of one embodiment of a semiconductor manufacturing device according to the present invention, FIGS. 2 and 3 are explanatory diagrams of another embodiment of the present invention, and FIG. 4 is an explanatory diagram of a conventional semiconductor processing device. It is. 1...reaction chamber, 2.3...? [ffi, 4... Work to matching net 1, 5... RF power supply, 6...
Semiconductor device, 7... Gas inlet/outlet pipe, 8... Quartz tube,
8'... Reflective film, 9... Window, 10... Mercury lamp, 11... Quartz tube, 12... Magnet.

Claims (5)

[Claims] 1. A reaction chamber that accommodates a semiconductor device, and within this reaction chamber,
A semiconductor manufacturing apparatus comprising: a gas introduction device for introducing a reactive gas for etching the semiconductor device; and a pair of electrodes for performing discharge for producing active ion species from the reactive gas; A semiconductor manufacturing apparatus comprising a light source device that irradiates the inside of the reaction chamber with light having a wavelength that promotes ionization of the semiconductor. 2. The light source device is a tube filled with a gas that absorbs discharge energy and emits light with a wavelength that promotes ionization of the reactive gas, and is provided between a pair of electrodes. A semiconductor manufacturing apparatus according to claim 1. 3. 3. The semiconductor manufacturing apparatus according to claim 2, wherein the reactive gas is a halogen compound and the light-emitting gas is mercury. 4. 4. The semiconductor manufacturing apparatus according to claim 2, wherein each of the pair of electrodes has a disk shape, and the tube filled with a gas that emits light has an annular shape. 5. 5. The semiconductor manufacturing apparatus according to claim 4, wherein a reflective film is formed on the outer inner surface of the annular tube.