JPS5764989A - Double method-junction type photosemiconductor device - Google Patents

Double method-junction type photosemiconductor device

Info

Publication number
JPS5764989A
JPS5764989A JP14080580A JP14080580A JPS5764989A JP S5764989 A JPS5764989 A JP S5764989A JP 14080580 A JP14080580 A JP 14080580A JP 14080580 A JP14080580 A JP 14080580A JP S5764989 A JPS5764989 A JP S5764989A
Authority
JP
Japan
Prior art keywords
layer
layers
photosemiconductor
junction type
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14080580A
Other languages
Japanese (ja)
Inventor
Nobuo Matsumoto
Kenji Kumabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP14080580A priority Critical patent/JPS5764989A/en
Publication of JPS5764989A publication Critical patent/JPS5764989A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H01L33/0012—Devices characterised by their operation having p-n or hi-lo junctions p-i-n devices

Abstract

PURPOSE:To produce a photosemiconductor device with high emission efficiency by a method wherein the first and second electrically conductive layers of amorphous Si with preset different H dopant concentration are piled one another and metal layers are also formed in lamination. CONSTITUTION:An insulating substrate 1 is covered by several layers in the order of a Cu layer 2, p<+> layer 3, p layer 4, undoped layer 5, n layer 5, n<+> layer 6, and a Cu layer 7. The layers 3-7 are formed of amorphous Si with which H is combined in the plasma CVD technique. The H concentration is lower in the layers 4 and 6 than in the layer 5, resulting in a smaller refractance n and a larger band gap Eg. This construction provides with ease a double hetero-junction type photosemiconductor device without taking account of lattice alignment. A higher emission efficiency is obtained than with a conventional device and a non-semiconductor substrate can be loaded with photosemiconductor devices in coexistence with other active devices.
JP14080580A 1980-10-08 1980-10-08 Double method-junction type photosemiconductor device Pending JPS5764989A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14080580A JPS5764989A (en) 1980-10-08 1980-10-08 Double method-junction type photosemiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14080580A JPS5764989A (en) 1980-10-08 1980-10-08 Double method-junction type photosemiconductor device

Publications (1)

Publication Number Publication Date
JPS5764989A true JPS5764989A (en) 1982-04-20

Family

ID=15277145

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14080580A Pending JPS5764989A (en) 1980-10-08 1980-10-08 Double method-junction type photosemiconductor device

Country Status (1)

Country Link
JP (1) JPS5764989A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6164175A (en) * 1984-09-06 1986-04-02 Ulvac Corp Amorphous semiconductor light-emitting diode and plane display device utilizing said diode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5529154A (en) * 1978-08-23 1980-03-01 Shunpei Yamazaki Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5529154A (en) * 1978-08-23 1980-03-01 Shunpei Yamazaki Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6164175A (en) * 1984-09-06 1986-04-02 Ulvac Corp Amorphous semiconductor light-emitting diode and plane display device utilizing said diode

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