JPS5764936A - Annealing device - Google Patents

Annealing device

Info

Publication number
JPS5764936A
JPS5764936A JP14047580A JP14047580A JPS5764936A JP S5764936 A JPS5764936 A JP S5764936A JP 14047580 A JP14047580 A JP 14047580A JP 14047580 A JP14047580 A JP 14047580A JP S5764936 A JPS5764936 A JP S5764936A
Authority
JP
Japan
Prior art keywords
wafer
discharge lamp
vicinity
back surface
lamp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14047580A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6226571B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Tatsumi Hiramoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Ushio Inc
Original Assignee
Ushio Denki KK
Ushio Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK, Ushio Inc filed Critical Ushio Denki KK
Priority to JP14047580A priority Critical patent/JPS5764936A/ja
Priority to DE19813139711 priority patent/DE3139711A1/de
Publication of JPS5764936A publication Critical patent/JPS5764936A/ja
Publication of JPS6226571B2 publication Critical patent/JPS6226571B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Organic Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP14047580A 1980-10-09 1980-10-09 Annealing device Granted JPS5764936A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP14047580A JPS5764936A (en) 1980-10-09 1980-10-09 Annealing device
DE19813139711 DE3139711A1 (de) 1980-10-09 1981-10-06 Glueheinrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14047580A JPS5764936A (en) 1980-10-09 1980-10-09 Annealing device

Publications (2)

Publication Number Publication Date
JPS5764936A true JPS5764936A (en) 1982-04-20
JPS6226571B2 JPS6226571B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1987-06-09

Family

ID=15269461

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14047580A Granted JPS5764936A (en) 1980-10-09 1980-10-09 Annealing device

Country Status (2)

Country Link
JP (1) JPS5764936A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3139711A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59178722A (ja) * 1983-03-18 1984-10-11 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 半導体の熱処理炉
US4560420A (en) * 1984-06-13 1985-12-24 At&T Technologies, Inc. Method for reducing temperature variations across a semiconductor wafer during heating
JPH01319934A (ja) * 1988-05-09 1989-12-26 Siemens Ag 電磁放射照射による半導体円板の急速熱処理方法
JP2003007632A (ja) * 2001-06-21 2003-01-10 Ushio Inc 閃光放射装置および熱処理装置
US7883988B2 (en) 2008-06-04 2011-02-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor substrate

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998035435A1 (fr) * 1997-02-05 1998-08-13 Smc Kabushiki Kaisha Actionneur et appareil de commande correspondant
DE19808246B4 (de) * 1998-02-27 2004-05-13 Daimlerchrysler Ag Verfahren zur Herstellung eines mikroelektronischen Halbleiterbauelements mittels Ionenimplatation

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50133532A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-04-10 1975-10-22
JPS5334302U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1976-08-26 1978-03-25

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50133532A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-04-10 1975-10-22
JPS5334302U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1976-08-26 1978-03-25

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59178722A (ja) * 1983-03-18 1984-10-11 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 半導体の熱処理炉
US4560420A (en) * 1984-06-13 1985-12-24 At&T Technologies, Inc. Method for reducing temperature variations across a semiconductor wafer during heating
JPH01319934A (ja) * 1988-05-09 1989-12-26 Siemens Ag 電磁放射照射による半導体円板の急速熱処理方法
JP2003007632A (ja) * 2001-06-21 2003-01-10 Ushio Inc 閃光放射装置および熱処理装置
US7883988B2 (en) 2008-06-04 2011-02-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor substrate

Also Published As

Publication number Publication date
DE3139711A1 (de) 1982-05-13
JPS6226571B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1987-06-09

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