JPS5759672A - Formation of coating resin film - Google Patents

Formation of coating resin film

Info

Publication number
JPS5759672A
JPS5759672A JP13376580A JP13376580A JPS5759672A JP S5759672 A JPS5759672 A JP S5759672A JP 13376580 A JP13376580 A JP 13376580A JP 13376580 A JP13376580 A JP 13376580A JP S5759672 A JPS5759672 A JP S5759672A
Authority
JP
Japan
Prior art keywords
film
coating film
polysilsesquioxane
adhesiveness
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13376580A
Other languages
Japanese (ja)
Other versions
JPS5914263B2 (en
Inventor
Toshisuke Kitakoji
Shiro Takeda
Minoru Nakajima
Hiroshi Tokunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13376580A priority Critical patent/JPS5914263B2/en
Publication of JPS5759672A publication Critical patent/JPS5759672A/en
Publication of JPS5914263B2 publication Critical patent/JPS5914263B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To enhance the mechanical strength of a coating film and the adhesiveness of the film to a coated substrate, by using polysilsesquioxane as an organic insulating coating film to be used in a semiconductor productiopn process, and irradiating the film with ion beam.
CONSTITUTION: Polysilsesquioxane dissolved in a mixed solvent comprising isophorone and toluene in a rate of 3:7 is applied as an insulating material between wires of a semiconductive device or the like. AFter dried, the applied film is heattreated for one hour at a relatively lower temperature of about 100°C in a nitrogen atmosphere to form an insulating film having a thickness of bout 1.0μ. Finally proton beams are applied for a few seconds with an energy of 100keV along a direction nearly vertical to the coating film. As a result, the coating film is improved in its hardness and strength as well as its adhesiveness to the semiconductor.
COPYRIGHT: (C)1982,JPO&Japio
JP13376580A 1980-09-26 1980-09-26 Method of forming resin coating film Expired JPS5914263B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13376580A JPS5914263B2 (en) 1980-09-26 1980-09-26 Method of forming resin coating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13376580A JPS5914263B2 (en) 1980-09-26 1980-09-26 Method of forming resin coating film

Publications (2)

Publication Number Publication Date
JPS5759672A true JPS5759672A (en) 1982-04-10
JPS5914263B2 JPS5914263B2 (en) 1984-04-03

Family

ID=15112427

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13376580A Expired JPS5914263B2 (en) 1980-09-26 1980-09-26 Method of forming resin coating film

Country Status (1)

Country Link
JP (1) JPS5914263B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8992806B2 (en) 2003-11-18 2015-03-31 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8992806B2 (en) 2003-11-18 2015-03-31 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof

Also Published As

Publication number Publication date
JPS5914263B2 (en) 1984-04-03

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