JPS5758377A - Manufacture of high luminescence dot array for light emitting diode - Google Patents

Manufacture of high luminescence dot array for light emitting diode

Info

Publication number
JPS5758377A
JPS5758377A JP13233180A JP13233180A JPS5758377A JP S5758377 A JPS5758377 A JP S5758377A JP 13233180 A JP13233180 A JP 13233180A JP 13233180 A JP13233180 A JP 13233180A JP S5758377 A JPS5758377 A JP S5758377A
Authority
JP
Japan
Prior art keywords
light emitting
emitting elements
light
rank
detecting surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13233180A
Other languages
Japanese (ja)
Other versions
JPS6158998B2 (en
Inventor
Hisao Oota
Yoshio Hatate
Minoru Koyama
Ko Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Stanley Electric Co Ltd
Original Assignee
Nippon Telegraph and Telephone Corp
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Stanley Electric Co Ltd filed Critical Nippon Telegraph and Telephone Corp
Priority to JP13233180A priority Critical patent/JPS5758377A/en
Publication of JPS5758377A publication Critical patent/JPS5758377A/en
Publication of JPS6158998B2 publication Critical patent/JPS6158998B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To manufacture high luminescence LED dot arrays by a method wherein a dicing technique is used in separating led elements wherein a second dicing process is performed askew to the first dicing direction. CONSTITUTION:Light emitting elements 1a in a rank (a) and light emitting elements 1b in a rank (b) respectively correspond to a dot. The ranks (a) and (b) are located to that the light emitting elements 1a and 1b are arranged zigzag-wise with a distance of, for instance, 125mum. a light detecting surface is moved as indicated by an arrow and some light emitting elements 1a are selectively activated in accordance with a prescribed pattern, with the light emitting elements 1b remaining inactive. The light detecting surface already exposed to light from some light emitting elements 1a moves on and, when it reaches the rank (b), some light emitting elements 1b are selectively activated. Gaps-between dots caused unevenness is thus eliminated and the light detecting surface can be uniformly illuminated.
JP13233180A 1980-09-25 1980-09-25 Manufacture of high luminescence dot array for light emitting diode Granted JPS5758377A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13233180A JPS5758377A (en) 1980-09-25 1980-09-25 Manufacture of high luminescence dot array for light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13233180A JPS5758377A (en) 1980-09-25 1980-09-25 Manufacture of high luminescence dot array for light emitting diode

Publications (2)

Publication Number Publication Date
JPS5758377A true JPS5758377A (en) 1982-04-08
JPS6158998B2 JPS6158998B2 (en) 1986-12-13

Family

ID=15078819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13233180A Granted JPS5758377A (en) 1980-09-25 1980-09-25 Manufacture of high luminescence dot array for light emitting diode

Country Status (1)

Country Link
JP (1) JPS5758377A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6344777A (en) * 1986-08-11 1988-02-25 Nec Corp Light emitting diode array chip
KR101158073B1 (en) * 2005-12-13 2012-06-22 서울옵토디바이스주식회사 Light emitting device having arrayed cells
JP2015111265A (en) * 2009-05-14 2015-06-18 ４２３３９９９ カナダ，インコーポレーテッド Systems and methods for providing high-resolution images using monolithic arrays of light emitting diodes

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940891A (en) * 1972-08-25 1974-04-17
JPS5322386A (en) * 1976-08-12 1978-03-01 Sanyo Electric Co Ltd Polarity identifying method of light emitting diode pellets

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940891A (en) * 1972-08-25 1974-04-17
JPS5322386A (en) * 1976-08-12 1978-03-01 Sanyo Electric Co Ltd Polarity identifying method of light emitting diode pellets

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6344777A (en) * 1986-08-11 1988-02-25 Nec Corp Light emitting diode array chip
KR101158073B1 (en) * 2005-12-13 2012-06-22 서울옵토디바이스주식회사 Light emitting device having arrayed cells
JP2015111265A (en) * 2009-05-14 2015-06-18 ４２３３９９９ カナダ，インコーポレーテッド Systems and methods for providing high-resolution images using monolithic arrays of light emitting diodes

Also Published As

Publication number Publication date
JPS6158998B2 (en) 1986-12-13

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