JPS6158998B2 - - Google Patents

Info

Publication number
JPS6158998B2
JPS6158998B2 JP13233180A JP13233180A JPS6158998B2 JP S6158998 B2 JPS6158998 B2 JP S6158998B2 JP 13233180 A JP13233180 A JP 13233180A JP 13233180 A JP13233180 A JP 13233180A JP S6158998 B2 JPS6158998 B2 JP S6158998B2
Authority
JP
Japan
Prior art keywords
dicing
light emitting
led
dot array
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP13233180A
Other languages
Japanese (ja)
Other versions
JPS5758377A (en
Inventor
Hisao Oota
Yoshio Kishu
Minoru Koyama
Ko Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP13233180A priority Critical patent/JPS5758377A/en
Publication of JPS5758377A publication Critical patent/JPS5758377A/en
Publication of JPS6158998B2 publication Critical patent/JPS6158998B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Led Devices (AREA)

Description

【発明の詳細な説明】 この発明は、液相成長等でP―N接合の作られ
た高輝度基板を使用して高輝度、高密度の発光ダ
イオード(LED)ドツトアレイが得られるよう
にした製造方法に関するものである。
[Detailed Description of the Invention] The present invention is a method for producing a high-brightness, high-density light emitting diode (LED) dot array using a high-brightness substrate on which a PN junction is formed by liquid phase growth or the like. It is about the method.

従来、LEDプリンタ等に使用する高密度LED
ドツトアレイを作る場合は、IC、LSI等を作る手
段として用いられている選択拡散技術によつてP
―N接合する方法がとられていた。しかしなが
ら、この方法ではP―N接合が拡散によつて作ら
れるため液相成長で作られたP―N接合に比べ発
光効率が悪く明るさが不足だつた。
Conventionally, high-density LEDs used in LED printers, etc.
When making dot arrays, P
-The N-junction method was used. However, in this method, the PN junction is created by diffusion, so the luminous efficiency is poorer and the brightness is insufficient compared to the PN junction created by liquid phase growth.

また、他のLEDドツトアレイを作る場合は、
第1図a,bに示すように、P―N接合を格子状
にダイシングすることによつて分離する方法があ
る。すなわち、1はLED素子の発光部、2は
LED素子の非発光部、3はダイシングみぞであ
る。しかしながらこの場合は、ダイシング幅Wが
最少50μmとなり、これ以下の間隔でドツト間を
分離することが不可能であつた。
Also, if you want to make other LED dot arrays,
As shown in FIGS. 1a and 1b, there is a method of separating the PN junction by dicing it in a grid pattern. In other words, 1 is the light emitting part of the LED element, and 2 is the light emitting part of the LED element.
The non-light emitting part of the LED element, 3, is a dicing groove. However, in this case, the dicing width W was at least 50 μm, and it was impossible to separate the dots at intervals smaller than this.

この発明は、上記の点にかんがみなされたもの
で、ダイシングによつてLEDドツトアレイを製
造する方法において、一方向のダイシングライン
を斜めに入れることにより電気的には各LED素
子間、すなわちドツト間が分離されるが、光学的
にはその分離幅が零かもしくは隣とのドツト間を
光学的に重なり合わせることもできる高輝度
LEDドツトアレイの製造方法を提供するもので
ある。
This invention was developed in view of the above points, and in a method of manufacturing an LED dot array by dicing, by diagonally inserting dicing lines in one direction, electrical distance between each LED element, that is, between dots can be improved. High brightness that allows dots to be separated, but optically the separation width is zero, or the dots can overlap optically with the adjacent dots.
A method for manufacturing an LED dot array is provided.

以下図面についてこの発明を詳細に説明する。 The present invention will be explained in detail below with reference to the drawings.

第2図a〜cはこの発明の一実施例を示すもの
で、第2図aはダイシングを説明するための部分
平面図、第2図bは電極部に配線を施した状態の
LEDドツトアレイの部分斜視図、第2図cは第
2図bのX―X線による断面図である。第2図a
に示すごとく、A方向のダイシング幅W1を125μ
mとし、B方向のダイシングをA方向に対して
63.43゜の角度でダイシング幅W2を56μmにダイ
シングする。A方向のダイシングピツチP1は350
μm、B方向のダイシングピツチP2は250μm
で、各々ダイシングする。
Figures 2a to 2c show an embodiment of the present invention. Figure 2a is a partial plan view for explaining dicing, and Figure 2b is a diagram showing a state in which wiring has been applied to the electrode section.
FIG. 2c is a partial perspective view of the LED dot array, and is a sectional view taken along the line X--X in FIG. 2b. Figure 2a
As shown, the dicing width W1 in the A direction is 125μ.
m, and the dicing in the B direction is relative to the A direction.
Dice at an angle of 63.43° to a dicing width W 2 of 56 μm. Dicing pitch P1 in direction A is 350
μm, dicing pitch P2 in B direction is 250μm
Dice each.

B方向のダイシングをA方向のダイシングに対
して前記角度を設けた理由は、ドツトアレイの長
手方向となるA方向のダイシングに直交する方向
から観察した際に、各ドツトが光学的に連続する
ようにするためである。なお、ダイシングはその
深さをP―N接合部を越えたところまでとし、各
ドツトが電気的に分離すればよい(第2図c参
照)。
The reason why the dicing in the B direction is set at the above angle with respect to the dicing in the A direction is to ensure that each dot is optically continuous when observed from a direction perpendicular to the dicing in the A direction, which is the longitudinal direction of the dot array. This is to do so. Note that the dicing should be done to a depth that exceeds the PN junction so that each dot is electrically isolated (see FIG. 2c).

第2図bに示す1aはaの列の発光部、1bは
bの列の発光部を示し、これらはそれぞれ1ドツ
トに対応する。aの列とbの列は各発光部1a,
1bが125μm間隔で千鳥状に配列されることに
なる。従つて、例えば感光面を矢印の方向に走ら
せ、発光部1aを先にパターンに従つて選択的に
発光させ、発光部1aで感光した感光面がbの列
に移動した時にそれまで非発光であつた発光部1
bを選択的に発光させる。このようにすることに
よつて感光面をドツト間の間隔をあけずに均一に
感光させることができる。なお、第2図a〜cに
おいて、4はLED素子、5はワイヤボンド、6
は電極リードである。
In FIG. 2b, 1a indicates a light emitting section in column a, and 1b indicates a light emitting section in column b, each of which corresponds to one dot. Column a and column b are each light emitting section 1a,
1b are arranged in a staggered manner at intervals of 125 μm. Therefore, for example, by running the photosensitive surface in the direction of the arrow, first causing the light emitting section 1a to selectively emit light according to the pattern, and when the photosensitive surface exposed by the light emitting section 1a moves to the column b, the light emitting section 1a that has not emitted light until then will emit light. Hot light emitting part 1
selectively emit light. By doing so, the photosensitive surface can be exposed uniformly without gaps between dots. In addition, in FIGS. 2 a to c, 4 is an LED element, 5 is a wire bond, and 6 is a wire bond.
is the electrode lead.

第3図はこの発明の他の実施例を示すもので、
A方向のダイシング幅W1を100μm、そのダイシ
ングピツチP1を350μm、B方向のダイシング幅
W2を45μmでそのダイシングピツチP2を250μ
m、A方向に対する角度を63.43゜でダイシング
することによつて発光部1aと1bを約16.7%ず
つ重ねて配列した例を示す。すなわち、長手方向
から直角にみて(C方向)、部分hが重なつてい
る。発光部1aと1bの配列を重なるようにする
か、重ならないようにするかは感光させるパター
ンをネガにするか、ポジにするかによつて決めら
れる。
FIG. 3 shows another embodiment of this invention,
The dicing width W 1 in the A direction is 100 μm, the dicing pitch P 1 is 350 μm, and the dicing width in the B direction is 100 μm.
W 2 is 45μm and its dicing pitch P2 is 250μm.
An example is shown in which the light emitting parts 1a and 1b are arranged so as to overlap each other by about 16.7% by dicing at an angle of 63.43 degrees with respect to the m and A directions. That is, when viewed perpendicularly from the longitudinal direction (direction C), the portions h overlap. Whether the light emitting parts 1a and 1b are arranged to overlap or not overlap is determined depending on whether the pattern to be exposed is negative or positive.

第2図、第3図は8本/mmについてのみ説明し
てあるが、A,B方向のダイシング幅W1,W2
ダイシングピツチP1,P2および角度を適宜変える
ことによつてさらに高密度のLEDドツトアレイ
ができることはいうまでもない。
Although FIGS. 2 and 3 only explain 8 pieces/mm, the dicing widths W 1 , W 2 in the A and B directions,
It goes without saying that even higher density LED dot arrays can be made by appropriately changing the dicing pitches P 1 and P 2 and the angle.

また、第3図は発光部1aと1bを約16.7%重
なり合わせた実施例であるが、これも上記の説明
より適宜選択できることはいうまでもなく、必要
に応じて発光部間隔を離すこともできる。
Further, although FIG. 3 shows an example in which the light emitting parts 1a and 1b overlap by about 16.7%, it goes without saying that this can be selected as appropriate from the above explanation, and the distance between the light emitting parts can be increased as necessary. can.

ダイシングみぞ3からの光洩れはダイシングみ
ぞ3を吸収材や反射材で覆うことによりドツトの
発光部1以外から光が洩れるのを防ぐこともでき
る。そして光の吸収材や反射材の薄膜によつて発
光部1以外の部分をマスクすることができること
はいうまでもない。
Light leakage from the dicing groove 3 can also be prevented by covering the dicing groove 3 with an absorbing material or a reflective material. It goes without saying that the parts other than the light emitting part 1 can be masked with a thin film of light absorbing material or reflecting material.

以上詳細に説明したようにこの発明は、高効率
なP―N接合面を持つた基板を用いることができ
るので、高輝度のLEDモノリシツクドツトアレ
イができる。またこの発明は、LED素子間の分
離をダイシングによつて行い、一方のダイシング
方向に対して他方を斜め方向にダイシングするよ
うにしたので、複数列のダイオードアレイを同一
基板上に形成し、隣接する列のLED素子群が互
い違いに配置する構造の解像力が10本以上の高密
度のダイオードドツトアレイを製造し得る。さら
に縦、横のダイシング幅と角度を変えることによ
つてドツト間に光学的な切れ目のないLEDドツ
トアレイができる。また必要に応じてドツト間の
光が重なるようにしたものや、逆にドツトの光が
離れたものを簡単に製造することができる。
As described in detail above, the present invention allows the use of a substrate with a highly efficient PN junction surface, making it possible to produce a high-brightness LED monolithic dot array. In addition, this invention separates the LED elements by dicing, and dices the other diagonally to one dicing direction, so that multiple rows of diode arrays can be formed on the same substrate and adjacent A high-density diode dot array of 10 or more diode dots can be manufactured with a structure in which rows of LED elements are alternately arranged. Furthermore, by changing the vertical and horizontal dicing widths and angles, an LED dot array with no optical breaks between dots can be created. Furthermore, it is possible to easily manufacture a device in which the light between the dots overlaps, or, conversely, a device in which the light between the dots is separated, as required.

またこの発明の方法では、面状の発光がなされ
るP―Nエピタキシヤル成長基板の面状発光面を
直接ダイシングにより分割し、この基板上に直接
に復数列のドツトアレイを形成できるので、ダイ
シング方向と幅を定めるのみで所望のドツト配置
が可能となり製造が容易である。
Furthermore, in the method of the present invention, the planar light-emitting surface of the PN epitaxial growth substrate that emits planar light is divided by direct dicing, and multiple rows of dot arrays can be formed directly on this substrate. The desired dot arrangement can be achieved by simply determining the width and manufacturing is easy.

さらに、この発明によつて製造したLEDドツ
トアレイを、フアクシミリ用光源、複写機用光源
に用いれば、小形で高出力の光源を構成できる。
また、発光ダイオードプリンタ、発光ダイオード
による読取装置に用いれば、小形で高速の装置を
構成することができる等の幾多の利点がある。
Furthermore, if the LED dot array manufactured according to the present invention is used as a light source for a facsimile machine or a light source for a copying machine, a compact and high-output light source can be constructed.
Further, when used in a light emitting diode printer or a light emitting diode reading device, there are many advantages such as being able to construct a compact and high speed device.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図a,bは従来のダイシングによるLED
ドツトアレイの平面図とX―X線による断面図、
第2図a,b,cはこの発明の一実施例を示すも
ので、第2図aはダイシングを説明するための部
分平面図、第2図bはLEDドツトアレイの部分
斜視図、第2図cは第2図bのX―X線による断
面図、第3図はこの発明の他の実施例を示す平面
略図である。 図中、1,1a,1bは発光部、2は非発光
部、3はダイシングみぞ、4はLED素子、5は
ワイヤボンド、6は電極リードである。
Figure 1 a and b are LEDs made by conventional dicing.
A plan view of the dot array and a cross-sectional view taken along the X-X line,
Figures 2a, b, and c show one embodiment of the present invention; Figure 2a is a partial plan view for explaining dicing; Figure 2b is a partial perspective view of an LED dot array; Figure 2b is a partial perspective view of an LED dot array; 2c is a sectional view taken along line XX in FIG. 2b, and FIG. 3 is a schematic plan view showing another embodiment of the present invention. In the figure, 1, 1a, and 1b are light emitting parts, 2 is a non-light emitting part, 3 is a dicing groove, 4 is an LED element, 5 is a wire bond, and 6 is an electrode lead.

Claims (1)

【特許請求の範囲】[Claims] 1 P―Nエピタキシヤル成長された基板を使用
した高輝度発光ダイオードドツトアレイの製造方
法において、複数列とするための各列間の分離を
ダイシングによつて行い、一方、各列の素子間の
分離は、列の長手方向より直角にみて光学的に連
続するように前記各列間の分離ダイシング方向に
対し斜めにダイシングすることを特徴とする高輝
度発光ダイオードドツトアレイの製造方法。
1. In a method for manufacturing a high-brightness light emitting diode dot array using a PN epitaxially grown substrate, separation between each column to form a plurality of columns is performed by dicing, while separation between elements in each column is performed. A method for manufacturing a high-brightness light emitting diode dot array, wherein the separation is performed by dicing obliquely to the separating dicing direction between each row so that the rows are optically continuous when viewed at right angles from the longitudinal direction of the rows.
JP13233180A 1980-09-25 1980-09-25 Manufacture of high luminescence dot array for light emitting diode Granted JPS5758377A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13233180A JPS5758377A (en) 1980-09-25 1980-09-25 Manufacture of high luminescence dot array for light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13233180A JPS5758377A (en) 1980-09-25 1980-09-25 Manufacture of high luminescence dot array for light emitting diode

Publications (2)

Publication Number Publication Date
JPS5758377A JPS5758377A (en) 1982-04-08
JPS6158998B2 true JPS6158998B2 (en) 1986-12-13

Family

ID=15078819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13233180A Granted JPS5758377A (en) 1980-09-25 1980-09-25 Manufacture of high luminescence dot array for light emitting diode

Country Status (1)

Country Link
JP (1) JPS5758377A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6344777A (en) * 1986-08-11 1988-02-25 Nec Corp Light emitting diode array chip
KR101158073B1 (en) * 2005-12-13 2012-06-22 서울옵토디바이스주식회사 Light emitting device having arrayed cells
US8749151B2 (en) * 2009-05-14 2014-06-10 4233999 Canada Inc. System for and method of providing high resolution images using monolithic arrays of light emitting diodes

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940891A (en) * 1972-08-25 1974-04-17
JPS5322386A (en) * 1976-08-12 1978-03-01 Sanyo Electric Co Ltd Polarity identifying method of light emitting diode pellets

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940891A (en) * 1972-08-25 1974-04-17
JPS5322386A (en) * 1976-08-12 1978-03-01 Sanyo Electric Co Ltd Polarity identifying method of light emitting diode pellets

Also Published As

Publication number Publication date
JPS5758377A (en) 1982-04-08

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