JPS5753241A - Silicon carbide carrier - Google Patents

Silicon carbide carrier

Info

Publication number
JPS5753241A
JPS5753241A JP55127139A JP12713980A JPS5753241A JP S5753241 A JPS5753241 A JP S5753241A JP 55127139 A JP55127139 A JP 55127139A JP 12713980 A JP12713980 A JP 12713980A JP S5753241 A JPS5753241 A JP S5753241A
Authority
JP
Japan
Prior art keywords
silicon carbide
carrier
carbide carrier
whisker
surface area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55127139A
Other languages
Japanese (ja)
Other versions
JPS631099B2 (en
Inventor
Tomio Kobayashi
Masayoshi Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOKAI KONETSU KOGYO KK
TOKAI KOUNETSU KOGYO KK
Original Assignee
TOKAI KONETSU KOGYO KK
TOKAI KOUNETSU KOGYO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TOKAI KONETSU KOGYO KK, TOKAI KOUNETSU KOGYO KK filed Critical TOKAI KONETSU KOGYO KK
Priority to JP55127139A priority Critical patent/JPS5753241A/en
Publication of JPS5753241A publication Critical patent/JPS5753241A/en
Publication of JPS631099B2 publication Critical patent/JPS631099B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a silicon carbide carrier having an extremely large surface area by forming a whisker like crystal of silicon carbide in a fine pore of a silicon carbide porous body.
CONSTITUTION: When, in a silicon carbide carrier prepared by a conventional method, a solution of an organosilicon high molecular compound or a liquid thereof is immersed and the resultant carrier is baked in an unoxidative atmosphere, whisker like crystals 13 of silicon carbide are formed in a fine pore 12. Therefore, the surface area of the silicon carbide carrier attains 0.5m2/g or more. As the organosilicon high molecular compound, polycarbosilane, polydimethylisiloxabe, polydiphenylsiloxane or the like are used.
COPYRIGHT: (C)1982,JPO&Japio
JP55127139A 1980-09-16 1980-09-16 Silicon carbide carrier Granted JPS5753241A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55127139A JPS5753241A (en) 1980-09-16 1980-09-16 Silicon carbide carrier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55127139A JPS5753241A (en) 1980-09-16 1980-09-16 Silicon carbide carrier

Publications (2)

Publication Number Publication Date
JPS5753241A true JPS5753241A (en) 1982-03-30
JPS631099B2 JPS631099B2 (en) 1988-01-11

Family

ID=14952574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55127139A Granted JPS5753241A (en) 1980-09-16 1980-09-16 Silicon carbide carrier

Country Status (1)

Country Link
JP (1) JPS5753241A (en)

Also Published As

Publication number Publication date
JPS631099B2 (en) 1988-01-11

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