JPS5749247A - Semiconductor wafer and method of producing same - Google Patents

Semiconductor wafer and method of producing same

Info

Publication number
JPS5749247A
JPS5749247A JP56107243A JP10724381A JPS5749247A JP S5749247 A JPS5749247 A JP S5749247A JP 56107243 A JP56107243 A JP 56107243A JP 10724381 A JP10724381 A JP 10724381A JP S5749247 A JPS5749247 A JP S5749247A
Authority
JP
Japan
Prior art keywords
semiconductor wafer
producing same
producing
same
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56107243A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0241172B2 (enExample
Inventor
Matsukueruroi Bour Deibuitsudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of JPS5749247A publication Critical patent/JPS5749247A/ja
Publication of JPH0241172B2 publication Critical patent/JPH0241172B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
    • H10P74/277—
    • H10P74/203—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/975—Substrate or mask aligning feature

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP56107243A 1980-07-11 1981-07-10 Semiconductor wafer and method of producing same Granted JPS5749247A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/167,408 US4386459A (en) 1980-07-11 1980-07-11 Electrical measurement of level-to-level misalignment in integrated circuits

Publications (2)

Publication Number Publication Date
JPS5749247A true JPS5749247A (en) 1982-03-23
JPH0241172B2 JPH0241172B2 (enExample) 1990-09-14

Family

ID=22607262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56107243A Granted JPS5749247A (en) 1980-07-11 1981-07-10 Semiconductor wafer and method of producing same

Country Status (2)

Country Link
US (1) US4386459A (enExample)
JP (1) JPS5749247A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63220537A (ja) * 1987-03-09 1988-09-13 Nec Corp 半導体基板

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4538105A (en) * 1981-12-07 1985-08-27 The Perkin-Elmer Corporation Overlay test wafer
US4571538A (en) * 1983-04-25 1986-02-18 Rockwell International Corporation Mask alignment measurement structure for semiconductor fabrication
US4725773A (en) * 1986-06-27 1988-02-16 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Cross-contact chain
US4835466A (en) * 1987-02-06 1989-05-30 Fairchild Semiconductor Corporation Apparatus and method for detecting spot defects in integrated circuits
JPH01184935A (ja) * 1988-01-20 1989-07-24 Toshiba Corp 半導体装置
US4855253A (en) * 1988-01-29 1989-08-08 Hewlett-Packard Test method for random defects in electronic microstructures
US4918377A (en) * 1988-12-05 1990-04-17 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Integrated circuit reliability testing
US5059897A (en) * 1989-12-07 1991-10-22 Texas Instruments Incorporated Method and apparatus for testing passive substrates for integrated circuit mounting
JPH0483173A (ja) * 1990-07-26 1992-03-17 Tele Syst:Yugen 電力量計
US5082792A (en) * 1990-08-15 1992-01-21 Lsi Logic Corporation Forming a physical structure on an integrated circuit device and determining its size by measurement of resistance
US5280437A (en) * 1991-06-28 1994-01-18 Digital Equipment Corporation Structure and method for direct calibration of registration measurement systems to actual semiconductor wafer process topography
ES2042382B1 (es) * 1991-10-30 1996-04-01 Consejo Superior Investigacion Estructura de test para la medida del desalineamiento entre niveles en tecnologias microelectronicas, basada en transistores mos con puerta triangular
US5373232A (en) * 1992-03-13 1994-12-13 The United States Of America As Represented By The Secretary Of Commerce Method of and articles for accurately determining relative positions of lithographic artifacts
TW248612B (enExample) * 1993-03-31 1995-06-01 Siemens Ag
JP3039210B2 (ja) * 1993-08-03 2000-05-08 日本電気株式会社 半導体装置の製造方法
US5457390A (en) * 1993-12-13 1995-10-10 Northern Telecom Limited Circuit board manufacture
US5699282A (en) * 1994-04-28 1997-12-16 The United States Of America As Represented By The Secretary Of Commerce Methods and test structures for measuring overlay in multilayer devices
JP3104906B2 (ja) * 1997-05-13 2000-10-30 日本電産リード株式会社 基板位置ずれ検出装置および基板位置ずれ検出方法
US5998226A (en) * 1998-04-02 1999-12-07 Lsi Logic Corporation Method and system for alignment of openings in semiconductor fabrication
US6380554B1 (en) * 1998-06-08 2002-04-30 Advanced Micro Devices, Inc. Test structure for electrically measuring the degree of misalignment between successive layers of conductors
US6647311B1 (en) * 1999-11-18 2003-11-11 Raytheon Company Coupler array to measure conductor layer misalignment
US6636064B1 (en) * 1999-12-14 2003-10-21 Kla-Tencor Dual probe test structures for semiconductor integrated circuits
US6563320B1 (en) * 2000-02-25 2003-05-13 Xilinx, Inc. Mask alignment structure for IC layers
US6684520B1 (en) 2000-02-25 2004-02-03 Xilinx, Inc. Mask-alignment detection circuit in x and y directions
US6393714B1 (en) 2000-02-25 2002-05-28 Xilinx, Inc. Resistor arrays for mask-alignment detection
US6305095B1 (en) 2000-02-25 2001-10-23 Xilinx, Inc. Methods and circuits for mask-alignment detection
US7655482B2 (en) * 2000-04-18 2010-02-02 Kla-Tencor Chemical mechanical polishing test structures and methods for inspecting the same
US6426534B1 (en) 2000-05-01 2002-07-30 Xilinx, Inc. Methods and circuits employing threshold voltages for mask-alignment detection
US6391669B1 (en) * 2000-06-21 2002-05-21 International Business Machines Corporation Embedded structures to provide electrical testing for via to via and interface layer alignment as well as for conductive interface electrical integrity in multilayer devices
US6559476B2 (en) * 2001-06-26 2003-05-06 United Microelectronics Corp. Method and structure for measuring bridge induced by mask layout amendment
JP3652671B2 (ja) * 2002-05-24 2005-05-25 沖電気工業株式会社 測定用配線パターン及びその測定方法
US6925411B1 (en) * 2003-04-02 2005-08-02 Sun Microsystems, Inc. Method and apparatus for aligning semiconductor chips using an actively driven vernier
US7084427B2 (en) 2003-06-10 2006-08-01 International Business Machines Corporation Systems and methods for overlay shift determination
US7868629B2 (en) * 2003-08-26 2011-01-11 Nxp B.V. Proportional variable resistor structures to electrically measure mask misalignment
CN100505237C (zh) * 2004-09-23 2009-06-24 Nxp股份有限公司 半导体器件多层之间对准的模拟测量
KR100828512B1 (ko) * 2005-10-11 2008-05-13 삼성전기주식회사 개방 및 단락의 동시 모니터링이 가능한 반도체 칩 패키지
US12228427B2 (en) * 2022-04-28 2025-02-18 Texas Instruments Incorporated Resistive differential alignment monitor
CN117956681A (zh) * 2022-10-20 2024-04-30 新加坡商群丰骏科技股份有限公司 电子装置以及电子装置的测试方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113768A (en) * 1976-03-22 1977-09-24 Hitachi Ltd Mask matching shift measuring pattern

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3835530A (en) * 1967-06-05 1974-09-17 Texas Instruments Inc Method of making semiconductor devices
US3650020A (en) * 1970-02-24 1972-03-21 Bell Telephone Labor Inc Method of monitoring semiconductor device fabrication
US3808527A (en) * 1973-06-28 1974-04-30 Ibm Alignment determining system
US3983479A (en) * 1975-07-23 1976-09-28 International Business Machines Corporation Electrical defect monitor structure
US4144493A (en) * 1976-06-30 1979-03-13 International Business Machines Corporation Integrated circuit test structure
JPS5434787A (en) * 1977-08-24 1979-03-14 Hitachi Ltd Formation of resistance of semiconductor integrated circuit
US4257825A (en) * 1978-08-30 1981-03-24 U.S. Philips Corporation Method of manufacturing semiconductor devices having improvements in device reliability by thermally treating selectively implanted test figures in wafers

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113768A (en) * 1976-03-22 1977-09-24 Hitachi Ltd Mask matching shift measuring pattern

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63220537A (ja) * 1987-03-09 1988-09-13 Nec Corp 半導体基板

Also Published As

Publication number Publication date
JPH0241172B2 (enExample) 1990-09-14
US4386459A (en) 1983-06-07

Similar Documents

Publication Publication Date Title
JPS5749247A (en) Semiconductor wafer and method of producing same
JPS5763855A (en) Semiconductor device and method of producing same
JPS5743413A (en) Semiconductor element and method of producing same
DE3473531D1 (en) Method of forming semiconductor devices
EP0146895A3 (en) Method of manufacturing semiconductor device
JPS57113267A (en) Method of producing semiconductor device
JPS5749235A (en) Method of producing semiconductor device
JPS5734367A (en) Method of producing semiconductor device
JPS57115871A (en) Method of producing semiconductor device
JPS57133678A (en) Method of producing semiconductor device
JPS57162363A (en) Semiconductor device and method of producing same
JPS56131965A (en) Method of producing semiconductor device
DE3479548D1 (en) Semiconductor device and method of manufacture thereof
JPS5728346A (en) Power semiconductor device and method of producing same
JPS5731180A (en) Method of producing semiconductor device
JPS56169370A (en) Mis semiconductor device and method of producing same
JPS571260A (en) Semiconductor device and method of manufacturing same
JPS5759323A (en) Method of producing semiconductor device
JPS57141925A (en) Method of producing semiconductor device
JPS57132340A (en) Semiconductor structure and method of producing same
JPS5795670A (en) Semiconductor device and method of producing same
JPS57109377A (en) Method of producing semiconductor device
JPS5791555A (en) Semiconductor element and method of producing same
JPS5749236A (en) Method of producing semiconductor device
JPS56167376A (en) Photosensitive semiconductor device and method of producing same