JPS5748261A - Interline ccd sensor and driving method thereof - Google Patents

Interline ccd sensor and driving method thereof

Info

Publication number
JPS5748261A
JPS5748261A JP55123259A JP12325980A JPS5748261A JP S5748261 A JPS5748261 A JP S5748261A JP 55123259 A JP55123259 A JP 55123259A JP 12325980 A JP12325980 A JP 12325980A JP S5748261 A JPS5748261 A JP S5748261A
Authority
JP
Japan
Prior art keywords
region
ccd
electron
type
ccd sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55123259A
Other languages
Japanese (ja)
Inventor
Hiromitsu Shiraki
Shinichi Teranishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55123259A priority Critical patent/JPS5748261A/en
Priority to US06/297,759 priority patent/US4484210A/en
Publication of JPS5748261A publication Critical patent/JPS5748261A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers

Abstract

PURPOSE:To obtain the interline CCD sensor, having no after image, and the driving method thereof by a method wherein the microscopic region, having the conductive type reverse to a substrate, is turned to pinch-off condition. CONSTITUTION:The unit cell of the interline CCD sensor is consisted of a P type substrate 100, an N type region 301, a P<+> type region 105, CCD transfer electrodes 103 and 104 and a field oxide film 101. When the electron generated by an incident ray is accumulated in the N region, the electric potential PSIN is turned to low level 302, and when the CCD transfer pulse phiCCD becomes high level, the electron of the N region is transferred to the CCD passing through the P<+> region. A pinch-off state is obtained by reducing the density of the N region, by having all electron transfered to the CCD and by turning the N region into depletion. As no electron exists in the N region, electric charge is not shifted to the CCD and no after image is generated.
JP55123259A 1980-09-05 1980-09-05 Interline ccd sensor and driving method thereof Pending JPS5748261A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP55123259A JPS5748261A (en) 1980-09-05 1980-09-05 Interline ccd sensor and driving method thereof
US06/297,759 US4484210A (en) 1980-09-05 1981-08-31 Solid-state imaging device having a reduced image lag

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55123259A JPS5748261A (en) 1980-09-05 1980-09-05 Interline ccd sensor and driving method thereof

Publications (1)

Publication Number Publication Date
JPS5748261A true JPS5748261A (en) 1982-03-19

Family

ID=14856131

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55123259A Pending JPS5748261A (en) 1980-09-05 1980-09-05 Interline ccd sensor and driving method thereof

Country Status (1)

Country Link
JP (1) JPS5748261A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5437422A (en) * 1977-08-29 1979-03-19 Toshiba Corp Solid state pickup device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5437422A (en) * 1977-08-29 1979-03-19 Toshiba Corp Solid state pickup device

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