JPS5748240A - Semiconductor element and method of producing same - Google Patents
Semiconductor element and method of producing sameInfo
- Publication number
- JPS5748240A JPS5748240A JP10630481A JP10630481A JPS5748240A JP S5748240 A JPS5748240 A JP S5748240A JP 10630481 A JP10630481 A JP 10630481A JP 10630481 A JP10630481 A JP 10630481A JP S5748240 A JPS5748240 A JP S5748240A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- producing same
- producing
- same
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3178—Coating or filling in grooves made in the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10157—Shape being other than a cuboid at the active surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16881880A | 1980-07-10 | 1980-07-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5748240A true JPS5748240A (en) | 1982-03-19 |
Family
ID=22613059
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10630481A Pending JPS5748240A (en) | 1980-07-10 | 1981-07-09 | Semiconductor element and method of producing same |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0044048A1 (ja) |
JP (1) | JPS5748240A (ja) |
BR (1) | BR8104309A (ja) |
CA (1) | CA1177975A (ja) |
IN (1) | IN154896B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015173187A (ja) * | 2014-03-11 | 2015-10-01 | 新電元工業株式会社 | 半導体装置及び半導体装置の製造方法 |
WO2021186936A1 (ja) * | 2020-03-19 | 2021-09-23 | Tdk株式会社 | ショットキーバリアダイオード |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BR8203630A (pt) * | 1981-06-29 | 1983-06-14 | Westinghouse Electric Corp | Dispositivo semicondutor processo de preparacao de uma pluralidade de dispositivos semicondutores apassivados com vidro |
DE3247938A1 (de) * | 1982-12-24 | 1984-07-05 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Halbleiterbauelement hoher sperrspannungsbelastbarkeit |
US5739048A (en) * | 1994-05-23 | 1998-04-14 | International Business Machines Corporation | Method for forming rows of partially separated thin film elements |
CN102263167B (zh) * | 2011-08-15 | 2013-04-17 | 英利能源(中国)有限公司 | 单晶硅太阳电池的边沿钝化方法、单晶硅太阳电池及其制备方法和光伏组件 |
DE102016124670B4 (de) * | 2016-12-16 | 2020-01-23 | Semikron Elektronik Gmbh & Co. Kg | Thyristor mit einem Halbleiterkörper |
CN113517205A (zh) * | 2020-04-27 | 2021-10-19 | 台湾积体电路制造股份有限公司 | 半导体器件及其形成方法 |
US11699663B2 (en) | 2020-04-27 | 2023-07-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Passivation scheme design for wafer singulation |
CN113299567B (zh) * | 2021-05-24 | 2024-02-02 | 捷捷半导体有限公司 | 一种钝化层制作方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3632434A (en) * | 1969-01-21 | 1972-01-04 | Jerald L Hutson | Process for glass passivating silicon semiconductor junctions |
US3628107A (en) * | 1969-05-05 | 1971-12-14 | Gen Electric | Passivated semiconductor device with peripheral protective junction |
US3608186A (en) * | 1969-10-30 | 1971-09-28 | Jearld L Hutson | Semiconductor device manufacture with junction passivation |
US3755720A (en) * | 1972-09-25 | 1973-08-28 | Rca Corp | Glass encapsulated semiconductor device |
DE2739762C2 (de) * | 1977-09-03 | 1982-12-02 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Verfahren zur Passivierung von Halbleiterkörpern |
US4235645A (en) * | 1978-12-15 | 1980-11-25 | Westinghouse Electric Corp. | Process for forming glass-sealed multichip semiconductor devices |
-
1981
- 1981-06-25 IN IN685/CAL/81A patent/IN154896B/en unknown
- 1981-07-07 BR BR8104309A patent/BR8104309A/pt unknown
- 1981-07-09 JP JP10630481A patent/JPS5748240A/ja active Pending
- 1981-07-09 CA CA000381463A patent/CA1177975A/en not_active Expired
- 1981-07-09 EP EP81105364A patent/EP0044048A1/en not_active Withdrawn
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015173187A (ja) * | 2014-03-11 | 2015-10-01 | 新電元工業株式会社 | 半導体装置及び半導体装置の製造方法 |
WO2021186936A1 (ja) * | 2020-03-19 | 2021-09-23 | Tdk株式会社 | ショットキーバリアダイオード |
US11908955B2 (en) | 2020-03-19 | 2024-02-20 | Tdk Corporation | Schottky barrier diode |
Also Published As
Publication number | Publication date |
---|---|
IN154896B (ja) | 1984-12-22 |
EP0044048A1 (en) | 1982-01-20 |
BR8104309A (pt) | 1982-03-23 |
CA1177975A (en) | 1984-11-13 |
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