JPS5745339A - Production of deposited film - Google Patents
Production of deposited filmInfo
- Publication number
- JPS5745339A JPS5745339A JP12157880A JP12157880A JPS5745339A JP S5745339 A JPS5745339 A JP S5745339A JP 12157880 A JP12157880 A JP 12157880A JP 12157880 A JP12157880 A JP 12157880A JP S5745339 A JPS5745339 A JP S5745339A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- substrate
- film
- electrodes
- formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Photoreceptors In Electrophotography (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12157880A JPS5745339A (en) | 1980-09-01 | 1980-09-01 | Production of deposited film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12157880A JPS5745339A (en) | 1980-09-01 | 1980-09-01 | Production of deposited film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5745339A true JPS5745339A (en) | 1982-03-15 |
JPH0124866B2 JPH0124866B2 (ja) | 1989-05-15 |
Family
ID=14814702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12157880A Granted JPS5745339A (en) | 1980-09-01 | 1980-09-01 | Production of deposited film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5745339A (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57160911A (en) * | 1981-03-27 | 1982-10-04 | Sumitomo Electric Ind Ltd | Manufacture of amorphous silicon film |
JPS5964769A (ja) * | 1982-09-30 | 1984-04-12 | Shimadzu Corp | プラズマcvd装置 |
JPS607133A (ja) * | 1983-06-24 | 1985-01-14 | Toshiba Corp | プラズマcvd装置 |
JPS63236708A (ja) * | 1987-03-25 | 1988-10-03 | Kanagawa Pref Gov | 炭素薄膜あるいは炭素粒子の気相合成法 |
JPS6446644A (en) * | 1987-08-18 | 1989-02-21 | Shikoku Elec Power | Ultrasonic wave generating device for ultrasonic flaw detection |
-
1980
- 1980-09-01 JP JP12157880A patent/JPS5745339A/ja active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57160911A (en) * | 1981-03-27 | 1982-10-04 | Sumitomo Electric Ind Ltd | Manufacture of amorphous silicon film |
JPH0134926B2 (ja) * | 1981-03-27 | 1989-07-21 | Sumitomo Electric Industries | |
JPS5964769A (ja) * | 1982-09-30 | 1984-04-12 | Shimadzu Corp | プラズマcvd装置 |
JPS607133A (ja) * | 1983-06-24 | 1985-01-14 | Toshiba Corp | プラズマcvd装置 |
JPS63236708A (ja) * | 1987-03-25 | 1988-10-03 | Kanagawa Pref Gov | 炭素薄膜あるいは炭素粒子の気相合成法 |
JPS6446644A (en) * | 1987-08-18 | 1989-02-21 | Shikoku Elec Power | Ultrasonic wave generating device for ultrasonic flaw detection |
Also Published As
Publication number | Publication date |
---|---|
JPH0124866B2 (ja) | 1989-05-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5114770A (en) | Method for continuously forming functional deposited films with a large area by a microwave plasma cvd method | |
DE3938830C2 (ja) | ||
SE8301364D0 (sv) | Sett och apparat for framstellning av amorfa fotovoltiska celler | |
US4406765A (en) | Apparatus and process for production of amorphous semiconductor | |
IE41938L (en) | Depositing by reactive sputtering | |
JPS5730325A (en) | Manufacture of amorphous silicon thin film | |
JPS5745339A (en) | Production of deposited film | |
EP0417306A4 (en) | Method of producing thin film | |
JPS56138921A (en) | Method of formation for impurity introduction layer | |
JPS577129A (en) | Treating method and device for sputtering | |
JPS56169116A (en) | Manufacture of amorphous silicon film | |
JPS56121629A (en) | Film forming method | |
JPH02166283A (ja) | 絶縁膜の形成方法 | |
JPS55162275A (en) | Manufacture of solar battery | |
JPS5651878A (en) | Manufacture of mis composition amorphous silicon solar cell | |
JPS57159016A (en) | Manufacture of amorphous silicon film | |
JPS5789217A (en) | Manufacturing device of semiconductor | |
JPS57104226A (en) | Plasma vapor phase growing apparatus | |
JPS565972A (en) | Film forming method | |
JPS56163262A (en) | Method and apparatus for forming oxidation and weather resistant film after surface treatment | |
JPS54128283A (en) | Manufacture of semiconductor device | |
JPS57167630A (en) | Plasma vapor-phase growing device | |
JPS59219927A (ja) | プラズマcvd装置 | |
JPS565974A (en) | Film forming method | |
JPS565973A (en) | Film forming method |