JPS5739528A - Heating equipment for wafer - Google Patents

Heating equipment for wafer

Info

Publication number
JPS5739528A
JPS5739528A JP11507180A JP11507180A JPS5739528A JP S5739528 A JPS5739528 A JP S5739528A JP 11507180 A JP11507180 A JP 11507180A JP 11507180 A JP11507180 A JP 11507180A JP S5739528 A JPS5739528 A JP S5739528A
Authority
JP
Japan
Prior art keywords
heat
layer
transmission layer
thermal conductivity
transmission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11507180A
Other languages
Japanese (ja)
Inventor
Keiichi Kawate
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11507180A priority Critical patent/JPS5739528A/en
Publication of JPS5739528A publication Critical patent/JPS5739528A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To unify surface temperature of a heating equipment, by a method wherein its heat-transmission layer is provided of two kinds of material boards which have different thermal conductivity each other and which are laminated alternately. CONSTITUTION:The heat-transmission layer HT, which has multilayer composition of alternately laminated two kinds of material boards which have substantially different thermal conductivity each other, for example, highly conductive aluminum and less conductive alumina, is provided on a heat source layer HS in which linear heater blocks HB are embedded. A heating plate HP on which wafers are placed is provided on the heat-transmission layer HT. With above configuration, the heat- transmission layer has higher thermal conductivity in the direction of the layer plain compared to that in the direction of the heat-transmission and when the heat is transferred from the layer with high conductivity to that with low conductivity the temperature distribution is gradually made uniform and the uniform temperature distribution is provided on the heating plate HP so that the quality of the films like resist film becomes uniform and the yield rate is improved.
JP11507180A 1980-08-21 1980-08-21 Heating equipment for wafer Pending JPS5739528A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11507180A JPS5739528A (en) 1980-08-21 1980-08-21 Heating equipment for wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11507180A JPS5739528A (en) 1980-08-21 1980-08-21 Heating equipment for wafer

Publications (1)

Publication Number Publication Date
JPS5739528A true JPS5739528A (en) 1982-03-04

Family

ID=14653451

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11507180A Pending JPS5739528A (en) 1980-08-21 1980-08-21 Heating equipment for wafer

Country Status (1)

Country Link
JP (1) JPS5739528A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01120814A (en) * 1987-11-04 1989-05-12 Tokyo Electron Ltd Semiconductor wafer placing table
JPH01120813A (en) * 1987-11-04 1989-05-12 Tokyo Electron Ltd Semiconductor wafer placing table
JPH07176482A (en) * 1991-05-31 1995-07-14 At & T Corp Method and apparatus for epitaxial growth
KR100339875B1 (en) * 1998-12-28 2002-10-11 (주) 대홍기업 Plate heating device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01120814A (en) * 1987-11-04 1989-05-12 Tokyo Electron Ltd Semiconductor wafer placing table
JPH01120813A (en) * 1987-11-04 1989-05-12 Tokyo Electron Ltd Semiconductor wafer placing table
JPH07176482A (en) * 1991-05-31 1995-07-14 At & T Corp Method and apparatus for epitaxial growth
KR100339875B1 (en) * 1998-12-28 2002-10-11 (주) 대홍기업 Plate heating device

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