CN219145631U - High heat transfer samming heating element - Google Patents

Abstract

The utility model discloses a high heat transfer uniform temperature heating unit which comprises a uniform Wen Biaopan, a graphene uniform temperature layer I, a heating circuit layer, a graphene uniform Wen Cenger, a heat preservation and insulation layer and a shell cover, wherein the uniform Wen Biaopan, the graphene uniform temperature layer I, the heating circuit layer, the graphene uniform Wen Cenger, the heat preservation and insulation layer and the shell cover are sequentially arranged from top to bottom, and a temperature sensor is fixed below a submerged surface on the upper surface of a uniform temperature dial. The high heat transfer uniform temperature heating unit enables the uniform heating effect of the hot plate to be obviously improved.

Description

High heat transfer samming heating element

Technical Field

The present utility model relates to, but is not limited to, spin coater apparatus, laser annealing apparatus, wafer oven apparatus, vacuum annealing apparatus, diffusion furnace apparatus, wafer heater, epitaxial heating furnace, and other soaking heating apparatus in semiconductor processing. In particular to a method and a whole set of technology which are suitable for realizing the extremely uniform heating of a baking and temperature-equalizing heating plate in all semiconductor devices.

Background

At present, the national economy rapidly develops, various advanced equipment layers are endless, and strong and efficient manufacturing capability is provided for various industries, such as the fields of aerospace, aviation, semiconductors, precision manufacturing and the like.

Among these, there are much higher demands on heating than the general civilian industry. Such as but not limited to a soaking heating unit of a semiconductor device.

Such as a photoresist stripper, is an apparatus used in the pre-bake and post-bake processes before and after the photolithography process in the semiconductor processing process. The baking step mainly volatilizes the solvent in the developer, increases the adhesiveness of the photoresist, and relieves the stress. If the solvent volatilization speed is inconsistent, the glue surface is uneven, potholes and depressions are formed, and the photoetching quality of the subsequent process is seriously affected.

And further, as a temperature equalizing disc for laser annealing, a temperature equalizing disc of a semiconductor vacuum annealing furnace and the like, the wafer is required to ensure the temperature uniformity of the whole disc surface within the upper and lower ranges of 400 ℃ to be minus or plus 1 ℃ even finer.

In short, the baking of semiconductor materials, especially wafers, has increasingly stringent requirements on the temperature uniformity of the baking tray surface, and with the increasing requirements on the productivity and quality of equipment in the semiconductor industry, the wafer surface temperature performance has become an important item for the performance of semiconductor equipment.

Therefore, the heating temperature of the wafer disc surface needs to be kept highly uniform, and the temperature difference is required to reach + -0.1 ℃ all the time. At present, only a very small number of foreign enterprises are claiming to reach the level, and domestic manufacturers are relatively backward.

The baking of the wafer is mainly realized by heating a baking hot plate of the semiconductor device below, and the hot plate is matched with the wafer in size. The wafer and the hot plate keep a distance of 0.1-0.3mm, and are mainly heated in a radiation mode to prevent over-baking.

The main structure of the hotplate is a platform for placing wafers and providing bake heating. The hotplate plane must ensure sufficient flatness and be easily thermally conductive to ensure uniform baking of the wafer.

Currently, manufacturers generally choose materials with high thermal conductivity as the heating plate body, such as aluminum, stainless steel, aluminum nitride, silicon carbide, and the like. Heating materials are placed at the bottom of the hot plate, and heating wires are generally used. After the electric heating wire is electrified, heat is transmitted to the tray body, and the tray body is heated to realize the baking of the wafer.

In the actual working process, the temperature uniformity of the hot plate is not ideal, and the hot plate is difficult to break through +/-0.5 ℃. The following main points are as follows:

1. the structural reasons are as follows: because the round hot plate is provided with a plurality of functional holes and special-shaped structures, the layout of the heating wires is greatly influenced, and uniform wiring is difficult to realize;

2. the electrical reasons are as follows: because the heating wire has low general resistance uniformity and uneven power of different wire segments, the heating source has uneven thermal linearity;

3. the material reasons are as follows: from the heater wire to the surface of the disk, a thermally conductive material is in the middle. At present, many failed manufacturers select heat conducting materials with high heat conductivity coefficient, such as aluminum nitride and the like. The reason is that: a. although the high thermal conductivity material has fast heat conduction and fast heat diffusion, the non-uniformity of the thermal field of the bottom heating wire can be more ' transparent ' seen ' by the top surface due to the fast heat conduction, and the thermal field temperature difference image can be more ' clear ' than the material with low thermal conductivity.

Since the thermal conduction only reduces the thermal field temperature difference, the "image" becomes more and more "blurred" over time but never reaches theoretical uniformity. This is the theoretical reason for failure of most manufacturers;

b. if the material has low heat conductivity coefficient, the heat conduction and diffusion are slow, and although the temperature difference image is relatively more blurred, the process heating speed requirement is difficult to meet, and the temperature difference is not small.

In summary, the thermal conductivity coefficient of the material is double-edged sword for even heating, so that the current technological level of the hot plate cannot meet the technical requirements of the spin-coating developing equipment.

Aiming at the problem, at present, foreign manufacturers, especially Japanese manufacturers choose to divide the surface of the hot plate into a plurality of areas, and then the temperature control is respectively and simultaneously carried out through a complex temperature control circuit, namely, the idea that the temperature difference of small areas reaches the standard firstly and then the areas with the plurality of temperatures are respectively aligned is ensured. The temperature control effect of the idea at present reaches the level of about +/-0.2-0.3 ℃.

The disadvantages of this method are: the sampling points are very many, the heating circuits are very many, the control algorithm is complex, only the Japanese company is willing to spend effort to stack the algorithms so as to be tired, the power heating wires and the control wires are as many as the cowhair, and the partition method can not solve the problem of nonuniform bottom heating source circuits.

For this purpose, we propose a high heat transfer soaking heating unit.

Disclosure of Invention

The utility model aims to provide a high heat transfer uniform temperature heating unit, which solves the problems in the background technology, and aims to solve the defects, and the utility model gives up the idea of isotropic heat conduction materials from the heat conduction direction of the materials, and seeks the uniform heat materials and the structural technological ideas with different heat conduction coefficients in the horizontal direction and the vertical direction. The even heating effect of the hot plate can rise by one order of magnitude.

The contradiction of the current soaking described above is the reason for the "transparency" of the thermal conductivity of the material. If a material is able to heat relatively slowly in the vertical direction and rapidly in the horizontal direction, the non-uniformity of the bottom heating circuit is first "blurred" by the material in the vertical direction, but the heat is quickly conducted and soaked in the horizontal direction, and then "appears" to the top surface as a sufficiently uniform "image" to achieve a significantly improved soak effect over the isotropic approach.

In order to achieve the above purpose, the present utility model provides the following technical solutions: the utility model provides a high heat transfer samming heating element, includes equal Wen Biaopan, first, the heating circuit layer of graphite alkene samming layer, graphite alkene samming Wen Cenger, heat preservation insulating layer, shell cover, equal Wen Biaopan, first, the heating circuit layer of graphite alkene samming Wen Cenger, heat preservation insulating layer, shell cover from the top down set gradually, the fixed temperature sensor of samming Wen Biaopan surface below.

Further, the uniform Wen Biaopan, the graphene uniform temperature layer I, the heating circuit layer, the graphene uniform Wen Cenger, the heat preservation and insulation layer and the shell cover are laminated into a 'six-layer treatment' structure.

Further, the graphene uniform temperature layer one and the graphene uniform Wen Cenger are graphene films.

Further, each Wen Biaopan is a wafer heating surface.

Further, the temperature equalizing dial material comprises aluminum nitride, copper, aluminum, stainless steel, aluminum silicon carbide, silicon carbide and silicon nitride.

Further, the heating circuit layer is an alloy metal film, and is a heat source layer.

Further, insulating layers are arranged on the upper surface and the lower surface of the heating circuit layer, so that the electrical safety of the heating circuit is ensured.

Further, each layer of the uniform Wen Biaopan, the graphene uniform temperature layer I, the heating circuit layer, the graphene uniform Wen Cenger, the heat insulation layer and the shell cover is penetrated in the axial direction and the radial direction or has various functional process holes.

Further, the temperature sensor and the heating circuit layer are connected to the controller, and the controller uniformly controls the temperature.

Compared with the prior art, the utility model has the beneficial effects that: when heating, the circuit is electrified, the temperature rises, a, heat firstly heats the lower surface of the graphene uniform temperature layer through the heating circuit layer; b. after the lower surface receives heat, the uneven heat at all parts is transversely and rapidly conducted, and the horizontal permeability 'smearing' diffusion of the temperature is efficiently completed; the upper surface of the graphene uniform temperature layer conducts heat with the temperature being substantially uniform to the uniform Wen Biaopan, and the temperature of the lower surface of the uniform temperature dial is very uniform; d. wen Biaopan then further transmits the heat with even temperature to the top surface of Wen Biaopan to complete the soaking conduction process.

Drawings

FIG. 1 is a schematic diagram of the structure of the present utility model.

In the figure: 1. wen Biaopan all; 2. a graphene uniform temperature layer I; 3. a heating circuit layer; 4. graphene both Wen Cenger; 5. a heat preservation and insulation layer; 6. a housing cover; 7. a temperature sensor.

The drawings are for illustrative purposes only and are not to be construed as limiting the present patent; for the purpose of better illustrating the embodiments, certain elements of the drawings may be omitted, enlarged or reduced and do not represent the actual product dimensions; it will be appreciated by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted.

Detailed Description

The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.

Referring to fig. 1, a high heat transfer and uniform temperature heating unit designs a heating plate into a sandwich structure. According to the thought, the graphite or graphene material meeting the current requirements is selected as the middle barrier temperature equalizing layer, so that the heating uniformity is greatly improved. The method is characterized by comprising the following steps:

the soaking disc body is divided into six parts including a soaking dial 1, a graphene soaking layer I2, a heating circuit layer 3, a graphene soaking layer II 4, a heat preservation and insulation layer 5 and a shell cover 6. Wen Biaopan 1 is a wafer heating surface, and six layers of plates are pressed into a 'six-surface treatment' structure;

materials of the temperature equalizing dial 1 include, but are not limited to, materials with uniform heat conduction and good characteristic consistency such as aluminum nitride, copper, aluminum, stainless steel, various alloys and the like, so that good conduction of a temperature field is ensured, and no gradient distortion of the temperature field is caused;

the next graphene uniform temperature layer is 2, the graphene/graphene performance of many manufacturers can reach the horizontal heat conductivity coefficient of 1000W/(mK) -10W/(mK) in the vertical direction, and the difference between the two directions reaches two orders of magnitude, so that the graphene uniform temperature layer is a uniform heat material with very ideal direction selectivity. After the graphene film layer receives heat of the lower layer, the heat of the high-temperature region can be rapidly diffused to the relatively low-temperature region through the graphene film in the horizontal direction, and efficient heat redistribution is performed, so that the uniform temperature effect is realized;

the third layer is a heating circuit layer 3, which is an alloy metal film selected but not limited to, and is a heat source layer. Insulating layers are arranged on the upper surface and the lower surface of the heating circuit, so that the electrical safety of the heating circuit can reach national and international standards. If the heating circuit is not provided with an insulating layer, an upper insulating protective layer and a lower insulating protective layer are required to be additionally and independently added;

the fourth layer is also a graphene uniform temperature layer, and the graphene uniform temperature layer II redistributes heat from the back surface to the temperature non-uniform region of the heating circuit layer 3, so that the heat obtained by the graphene uniform temperature layer I2 is a uniform thermal field; 2. so that temperature non-uniformities of the backside are effectively shielded at this layer until the effect of backside interference is reduced. Thereby a more uniform thermal field is obtained.

The fifth layer is a heat preservation and insulation layer 5, which restrains the heat of the hot plate system in a limited space range, reduces ineffective and uneven heat load and reduces heat energy waste, reduces heat pollution and heat interference to the whole equipment, simplifies boundary conditions and improves temperature control precision;

the sixth layer is a housing cover 6 which assembles all the components together and protects the input and output harnesses;

a high-precision temperature sensor 7 is fixed below the surface of the temperature equalizing dial 1, and temperature sampling is carried out to provide a temperature information source for the controller;

the layers of the Liuming preparation are penetrated in the axial direction and the radial direction or have various functional process holes, and the graphene thin layer is also perforated. Because the vertical-horizontal heat conduction characteristics of the graphite radiating fin and the graphene material are close, the patent combines and discusses graphite and graphene;

the temperature sensor 7 and the heating circuit are connected to the controller, and the controller uniformly controls the temperature;

when heating, the circuit is electrified, the temperature rises, a, heat firstly heats the lower surface of the graphene uniform temperature layer I2 through the heating circuit layer 3; b. after the lower surface receives heat, the uneven heat at all parts is transversely and rapidly conducted, and the horizontal permeability 'smearing' diffusion of the temperature is efficiently completed; c. the upper surface of the graphene uniform temperature layer conducts heat with the temperature being substantially uniform to the uniform Wen Biaopan 1, and the temperature of the lower surface of the uniform Wen Biaopan is very uniform; d. the uniform temperature dial 1 then transmits the heat with even temperature to the top surface of the uniform Wen Biaopan, and the uniform heat transmission process is completed.

Preferably, the thickness of the graphene is reasonably selected according to specific temperature and heat flow and parameters of the graphene per se so as to ensure reasonable optimization of the heat conduction speed in the vertical-horizontal direction;

preferably, the inner surfaces of the dial 1 and the heating circuit layer 3 must be very flat and smooth to ensure that the heat conduction is completed "seamless", "gapless", "no air gap". In order to solve the problem of bubbles when the temperature-equalizing dial plate 1 and the heating circuit layer 3 are in pressure connection with the graphene sheet without air gaps, V-shaped grooves with the depth of 0.1-0.2 mm can be cut on the contact surface of the temperature-equalizing dial plate 1 and the graphene film, the depth has little influence on heat conduction, and all V-shaped groove lines are parallel to run through the whole plate with the interval of about 15mm. The two plates are perpendicular to each other, so that the stored air bubbles can be discharged through the air guide groove, and meanwhile, the heat transfer guide of the heating circuit layer 3 is perpendicular to the heat transfer guide of the temperature equalizing dial 1, so that the overall and uniform heat conduction is ensured;

preferably, the heating circuit can reasonably draw the heating circuit to be fine and uniform as far as possible, reasonably avoid the process holes, and ensure that the initial heat source is as uniform as possible;

preferably, the process holes and the temperature sampling holes are selected to be balanced and symmetrically distributed as much as possible, so that the heat conducting layer can conduct symmetrically and transfer heat evenly. When heating, the circuit is electrified, the temperature rises, and the heat firstly heats the lower surface of the graphene uniform temperature layer 12 through the insulating heat conducting partition plate 13; after the lower surface receives heat, the uneven heat at all parts is transversely and rapidly conducted, and the horizontal permeability 'smearing' diffusion of the temperature is efficiently completed; the upper surface of the graphene uniform temperature layer 12 conducts heat with substantially uniform temperature to the upper surface plate 11 of the tray, and the temperature of the lower surface of the upper surface plate 11 of the tray is very uniform; the tray upper surface plate 11 then transmits the heat with even temperature to the top surface of the tray upper surface plate 11, and the soaking conduction process is completed.

Although embodiments of the present utility model have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the utility model, the scope of which is defined in the appended claims and their equivalents.

Claims (8)

1. The utility model provides a high heat transfer samming heating element, includes samming Wen Biaopan (1), graphite alkene samming layer one (2), heating circuit layer (3), graphite alkene samming Wen Cenger (4), heat preservation insulating layer (5), shell cover (6), its characterized in that: the temperature sensor is characterized in that the temperature sensor is composed of a uniform Wen Biaopan (1), a graphene uniform temperature layer I (2), a heating circuit layer (3), graphene uniform Wen Cenger (4), a heat preservation and insulation layer (5) and a shell cover (6) which are sequentially arranged from top to bottom, and a temperature sensor (7) is fixed below the surface of the uniform Wen Biaopan (1).

2. A high heat transfer soaking heating unit according to claim 1, wherein: the device is characterized in that six layers of plates including the uniform Wen Biaopan (1), the graphene uniform temperature layer I (2), the heating circuit layer (3), the graphene uniform Wen Cenger (4), the heat preservation and insulation layer (5) and the shell cover (6) are pressed to form a 'six-layer treatment' structure.

3. A high heat transfer soaking heating unit according to claim 1, wherein: the graphene uniform temperature layer one (2) and the graphene uniform Wen Cenger (4) are graphene films.

4. A high heat transfer soaking heating unit according to claim 1, wherein: and each Wen Biaopan (1) is a wafer heating surface.

5. A high heat transfer soaking heating unit according to claim 1, wherein: the heating circuit layer (3) is an alloy metal film which is a heat source layer.

6. The high heat transfer soaking heating unit according to claim 5, wherein: insulating layers are arranged on the upper surface and the lower surface of the heating circuit layer (3), so that the electrical safety of the heating circuit is ensured.

7. A high heat transfer soaking heating unit according to claim 1, wherein: each layer of uniform Wen Biaopan (1), graphene uniform temperature layer one (2), heating circuit layer (3), graphene uniform Wen Cenger (4), heat preservation and insulation layer (5) and shell cover (6) is arranged in the axial direction and the radial direction.

8. A high heat transfer soaking heating unit according to claim 1, wherein: the temperature sensor (7) and the heating circuit layer (3) are connected to the controller, and the controller uniformly controls the temperature.

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