JPS5734346A - Division of semiconductor wafer - Google Patents

Division of semiconductor wafer

Info

Publication number
JPS5734346A
JPS5734346A JP10993980A JP10993980A JPS5734346A JP S5734346 A JPS5734346 A JP S5734346A JP 10993980 A JP10993980 A JP 10993980A JP 10993980 A JP10993980 A JP 10993980A JP S5734346 A JPS5734346 A JP S5734346A
Authority
JP
Japan
Prior art keywords
sheet
wafer
instance
dicing line
fixed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10993980A
Other languages
Japanese (ja)
Inventor
Keiji Itoga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10993980A priority Critical patent/JPS5734346A/en
Publication of JPS5734346A publication Critical patent/JPS5734346A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0041—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing the workpiece being brought into contact with a suitably shaped rigid body which remains stationary during breaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Dicing (AREA)

Abstract

PURPOSE:To improve operation efficiency and an yield, by a method wherein a wafer, on the surface of which a dicing line is formed and the rear of which is provided with a magnetizable metal layer, is placed on a flexible magnetic sheet and is bent in the fixed cuverture. CONSTITUTION:On the surface of a wafer 1, a dicing line 11 is formed in the vertical two directions, and the rear is provided with a metalized layer consisting of multilayer metal including an Ni-layer. Said wafer 1, for instance, is placed on a magnetic rubber sheet 6 containing powder magnet to be fixed, for instance, with a weak magnetic coating sheet 7. This is placed on a semicylindrical jig 8 keeping the sheet 7 at the top and held down from above with a presser tool to break so that the cylinder axis may meet with the dicing line. Next, after turning by 90 deg. to break in the orthogonal direction, the sheet 6 and the sheet 7 are turned around to perform similarly in two directions. The cuverture radius of the jig 8 is set at the most suitable value according to the pellet size, for instance, in the case of the pellet of 3-5mm. square the curverture radius is made to be 17-30mm. thus to reduce the rate of faulty products. Also after breaking, the pellets 12 can be aligned on the sheet with the fixed intervals thus to improve the working efficiency.
JP10993980A 1980-08-08 1980-08-08 Division of semiconductor wafer Pending JPS5734346A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10993980A JPS5734346A (en) 1980-08-08 1980-08-08 Division of semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10993980A JPS5734346A (en) 1980-08-08 1980-08-08 Division of semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS5734346A true JPS5734346A (en) 1982-02-24

Family

ID=14522934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10993980A Pending JPS5734346A (en) 1980-08-08 1980-08-08 Division of semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS5734346A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4909198A (en) * 1988-03-01 1990-03-20 Toyota Jidosha Kabushiki Kaisha Aluminum alloy valve lifter with sprayed coating and method of producing same
US20100243623A1 (en) * 2009-03-25 2010-09-30 Samsung Mobile Display Co., Ltd. Method of cutting substrate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4909198A (en) * 1988-03-01 1990-03-20 Toyota Jidosha Kabushiki Kaisha Aluminum alloy valve lifter with sprayed coating and method of producing same
US20100243623A1 (en) * 2009-03-25 2010-09-30 Samsung Mobile Display Co., Ltd. Method of cutting substrate
US8444906B2 (en) * 2009-03-25 2013-05-21 Samsung Display Co., Ltd. Method of cutting substrate

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