JPS5734099A - Epitaxial growth of liquid phase - Google Patents

Epitaxial growth of liquid phase

Info

Publication number
JPS5734099A
JPS5734099A JP10868580A JP10868580A JPS5734099A JP S5734099 A JPS5734099 A JP S5734099A JP 10868580 A JP10868580 A JP 10868580A JP 10868580 A JP10868580 A JP 10868580A JP S5734099 A JPS5734099 A JP S5734099A
Authority
JP
Japan
Prior art keywords
growth
insb
separating material
melt
container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10868580A
Other languages
English (en)
Japanese (ja)
Other versions
JPS621358B2 (enrdf_load_stackoverflow
Inventor
Makoto Ishii
Wataru Suzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10868580A priority Critical patent/JPS5734099A/ja
Publication of JPS5734099A publication Critical patent/JPS5734099A/ja
Publication of JPS621358B2 publication Critical patent/JPS621358B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP10868580A 1980-08-06 1980-08-06 Epitaxial growth of liquid phase Granted JPS5734099A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10868580A JPS5734099A (en) 1980-08-06 1980-08-06 Epitaxial growth of liquid phase

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10868580A JPS5734099A (en) 1980-08-06 1980-08-06 Epitaxial growth of liquid phase

Publications (2)

Publication Number Publication Date
JPS5734099A true JPS5734099A (en) 1982-02-24
JPS621358B2 JPS621358B2 (enrdf_load_stackoverflow) 1987-01-13

Family

ID=14491056

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10868580A Granted JPS5734099A (en) 1980-08-06 1980-08-06 Epitaxial growth of liquid phase

Country Status (1)

Country Link
JP (1) JPS5734099A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6283399A (ja) * 1985-10-04 1987-04-16 Mitsubishi Electric Corp 液相エピタキシヤル成長用ボ−ト
US5554472A (en) * 1994-02-23 1996-09-10 Fuji Electric Co., Ltd. Electrophotographic photoconductors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6283399A (ja) * 1985-10-04 1987-04-16 Mitsubishi Electric Corp 液相エピタキシヤル成長用ボ−ト
US5554472A (en) * 1994-02-23 1996-09-10 Fuji Electric Co., Ltd. Electrophotographic photoconductors

Also Published As

Publication number Publication date
JPS621358B2 (enrdf_load_stackoverflow) 1987-01-13

Similar Documents

Publication Publication Date Title
JPS56138917A (en) Vapor phase epitaxial growth
JPS5734099A (en) Epitaxial growth of liquid phase
JPS54104770A (en) Heat treatment method for 3-5 group compound semiconductor
US4706604A (en) Wipe-off apparatus of liquid phase epitaxy of mercury cadmium telluride
JPS57205395A (en) Manufacture of crystal substrate
JPS5742598A (en) Liquid-phase epitaxial growing method
JPS5478377A (en) Method and apparatus for growing semiconductor crystal
JPS5645897A (en) Manufacture of silicon carbide crystal
JPS55149195A (en) Manufacture of silicon carbide substrate
JPS55149193A (en) Manufacture of silicon carbide substrate
JPS55116700A (en) Production of silicon carbide crystal layer
Safaraliev et al. Study of the Process of Silicon Carbide Crystallization from Liquid Phase on Passage of Electric Current
JPS538375A (en) Method and apparatus for pulling up single crystal
JPS57123898A (en) Preparation of semi-insulating gaas single crystal
JPS54146280A (en) Epitaxial-growth apparatus in liquid phase
JPS54147176A (en) Liquid phase epitaxial growing apparatus
GB1376973A (en) Method of growing monocrystalline semiconductor material
JPS5575998A (en) Liquid phase epitaxial growing method
JPS5567129A (en) Method of epitaxial growth at liquid phase
JPS53147684A (en) Method of and apparatus for liquid phase epitaxial growth
JPS5696800A (en) Epitaxial growth of liquid phase
JPS57175796A (en) Liquid phase epitaxial growth
JPS52155186A (en) Liquid phase growth of iii-v group semiconductor
JPS52153375A (en) Vapor phase growth method for g#a#
JPS554947A (en) Method of growing liquid phase epitaxial