JPS5733872B2 - - Google Patents
Info
- Publication number
- JPS5733872B2 JPS5733872B2 JP14021476A JP14021476A JPS5733872B2 JP S5733872 B2 JPS5733872 B2 JP S5733872B2 JP 14021476 A JP14021476 A JP 14021476A JP 14021476 A JP14021476 A JP 14021476A JP S5733872 B2 JPS5733872 B2 JP S5733872B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/051—Manufacture or treatment of FETs having PN junction gates
- H10D30/0512—Manufacture or treatment of FETs having PN junction gates of FETs having PN homojunction gates
- H10D30/0515—Manufacture or treatment of FETs having PN junction gates of FETs having PN homojunction gates of vertical FETs having PN homojunction gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
- H10D30/831—Vertical FETs having PN junction gate electrodes
Landscapes
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14021476A JPS5365078A (en) | 1976-11-24 | 1976-11-24 | Production of junction type field effect transistor |
| US05/853,868 US4175317A (en) | 1976-11-24 | 1977-11-22 | Method for manufacturing junction type field-effect transistors |
| DE2752335A DE2752335C3 (de) | 1976-11-24 | 1977-11-23 | Verfahren zur Herstellung eines Sperrschicht-Feldeffekttransistors mit einem vertikalen Kanal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14021476A JPS5365078A (en) | 1976-11-24 | 1976-11-24 | Production of junction type field effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5365078A JPS5365078A (en) | 1978-06-10 |
| JPS5733872B2 true JPS5733872B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1982-07-20 |
Family
ID=15263563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14021476A Granted JPS5365078A (en) | 1976-11-24 | 1976-11-24 | Production of junction type field effect transistor |
Country Status (3)
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2049273B (en) * | 1979-05-02 | 1983-05-25 | Philips Electronic Associated | Method for short-circuting igfet source regions to a substrate |
| FR2472838A1 (fr) * | 1979-12-26 | 1981-07-03 | Radiotechnique Compelec | Transistor a effet de champ du type a jonction et son procede de realisation |
| US4477963A (en) * | 1980-12-23 | 1984-10-23 | Gte Laboratories Incorporated | Method of fabrication of a low capacitance self-aligned semiconductor electrode structure |
| JPS5910274A (ja) * | 1982-07-09 | 1984-01-19 | Nec Corp | Ｍｉｓ型半導体装置 |
| US4512076A (en) * | 1982-12-20 | 1985-04-23 | Raytheon Company | Semiconductor device fabrication process |
| US4566176A (en) * | 1984-05-23 | 1986-01-28 | U.S. Philips Corporation | Method of manufacturing transistors |
| JPH01123417A (ja) * | 1987-11-07 | 1989-05-16 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| US5597758A (en) * | 1994-08-01 | 1997-01-28 | Motorola, Inc. | Method for forming an electrostatic discharge protection device |
| KR0167271B1 (ko) * | 1995-11-30 | 1998-12-15 | 문정환 | 비균등 도우프 채널 구조를 갖는 반도체소자의 제조방법 |
| EP1947539A4 (en) * | 2005-09-27 | 2011-05-18 | Advantest Corp | CONTROL PROCEDURE AND CONTROL SYSTEM |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4041517A (en) * | 1974-09-04 | 1977-08-09 | Tokyo Shibaura Electric Co., Ltd. | Vertical type junction field effect semiconductor device |
-
1976
- 1976-11-24 JP JP14021476A patent/JPS5365078A/ja active Granted
-
1977
- 1977-11-22 US US05/853,868 patent/US4175317A/en not_active Expired - Lifetime
- 1977-11-23 DE DE2752335A patent/DE2752335C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2752335A1 (de) | 1978-06-01 |
| US4175317A (en) | 1979-11-27 |
| DE2752335C3 (de) | 1981-02-26 |
| JPS5365078A (en) | 1978-06-10 |
| DE2752335B2 (de) | 1980-06-19 |