JPS5732904B2 - - Google Patents
Info
- Publication number
- JPS5732904B2 JPS5732904B2 JP543977A JP543977A JPS5732904B2 JP S5732904 B2 JPS5732904 B2 JP S5732904B2 JP 543977 A JP543977 A JP 543977A JP 543977 A JP543977 A JP 543977A JP S5732904 B2 JPS5732904 B2 JP S5732904B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/651,555 US4033287A (en) | 1976-01-22 | 1976-01-22 | Radial flow reactor including glow discharge limiting shield |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS52132677A JPS52132677A (en) | 1977-11-07 |
| JPS5732904B2 true JPS5732904B2 (en:Method) | 1982-07-14 |
Family
ID=24613299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP543977A Granted JPS52132677A (en) | 1976-01-22 | 1977-01-22 | Reactor for radiating flow |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4033287A (en:Method) |
| JP (1) | JPS52132677A (en:Method) |
| BE (1) | BE850518A (en:Method) |
| DE (1) | DE2702120A1 (en:Method) |
| FR (1) | FR2339001A1 (en:Method) |
| GB (1) | GB1563529A (en:Method) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62281913A (ja) * | 1986-05-30 | 1987-12-07 | 株式会社 ヒロ−・ミラ− | 着色鏡及びその製造方法 |
| JPH03269401A (ja) * | 1990-03-19 | 1991-12-02 | Nippon Sheet Glass Co Ltd | 装飾反射面付透明体の製法 |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4226897A (en) * | 1977-12-05 | 1980-10-07 | Plasma Physics Corporation | Method of forming semiconducting materials and barriers |
| US4328258A (en) * | 1977-12-05 | 1982-05-04 | Plasma Physics Corp. | Method of forming semiconducting materials and barriers |
| JPS5538043A (en) * | 1978-09-12 | 1980-03-17 | Fujitsu Ltd | Dry etching device |
| US4282267A (en) * | 1979-09-20 | 1981-08-04 | Western Electric Co., Inc. | Methods and apparatus for generating plasmas |
| US4307283A (en) * | 1979-09-27 | 1981-12-22 | Eaton Corporation | Plasma etching apparatus II-conical-shaped projection |
| US4270999A (en) * | 1979-09-28 | 1981-06-02 | International Business Machines Corporation | Method and apparatus for gas feed control in a dry etching process |
| JPS5811240U (ja) * | 1981-07-14 | 1983-01-25 | 株式会社島津製作所 | プラズマｃｖｄ装置 |
| US4574733A (en) * | 1982-09-16 | 1986-03-11 | Energy Conversion Devices, Inc. | Substrate shield for preventing the deposition of nonhomogeneous films |
| US4462333A (en) * | 1982-10-27 | 1984-07-31 | Energy Conversion Devices, Inc. | Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus |
| US4525375A (en) * | 1983-03-28 | 1985-06-25 | Rca Corporation | Method of controllong the deposition of hydrogenated amorphous silicon and apparatus therefor |
| JPS59207620A (ja) * | 1983-05-10 | 1984-11-24 | Zenko Hirose | アモルフアスシリコン成膜装置 |
| US4593644A (en) * | 1983-10-26 | 1986-06-10 | Rca Corporation | Continuous in-line deposition system |
| JPS60117716A (ja) * | 1983-11-30 | 1985-06-25 | Zenko Hirose | 成膜方法 |
| EP0301604B1 (de) * | 1984-01-28 | 1993-05-26 | Philips Patentverwaltung GmbH | Vorrichtung zur Beschichtung eines Substrates mittels Plasma-Chemical Vapour Deposition oder Kathodenzerstäubung und damit ausgeführtes Verfahren |
| JPS61232612A (ja) * | 1985-04-08 | 1986-10-16 | Semiconductor Energy Lab Co Ltd | 気相反応装置 |
| JPS6164121A (ja) * | 1984-09-05 | 1986-04-02 | Toshiba Corp | Ｃｖｄ装置 |
| US4694779A (en) * | 1984-10-19 | 1987-09-22 | Tetron, Inc. | Reactor apparatus for semiconductor wafer processing |
| US6786997B1 (en) | 1984-11-26 | 2004-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing apparatus |
| JPH0752718B2 (ja) | 1984-11-26 | 1995-06-05 | 株式会社半導体エネルギー研究所 | 薄膜形成方法 |
| GB8508699D0 (en) * | 1985-04-03 | 1985-05-09 | Barr & Stroud Ltd | Chemical vapour deposition of products |
| US5332697A (en) * | 1989-05-31 | 1994-07-26 | Smith Rosemary L | Formation of silicon nitride by nitridation of porous silicon |
| US5304282A (en) * | 1991-04-17 | 1994-04-19 | Flamm Daniel L | Processes depending on plasma discharges sustained in a helical resonator |
| CN1122117C (zh) | 1997-12-05 | 2003-09-24 | 泰格尔公司 | 带有沉积屏蔽板的等离子体反应器 |
| US6390019B1 (en) | 1998-06-11 | 2002-05-21 | Applied Materials, Inc. | Chamber having improved process monitoring window |
| JP5054874B2 (ja) * | 1999-12-02 | 2012-10-24 | ティーガル コーポレイション | リアクタ内でプラチナエッチングを行う方法 |
| US6440219B1 (en) * | 2000-06-07 | 2002-08-27 | Simplus Systems Corporation | Replaceable shielding apparatus |
| AU2001283944A1 (en) * | 2000-09-22 | 2002-04-02 | Aixtron Ag | Gas inlet mechanism for cvd-method and device |
| US6716302B2 (en) * | 2000-11-01 | 2004-04-06 | Applied Materials Inc. | Dielectric etch chamber with expanded process window |
| US7780785B2 (en) * | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
| US20090029033A1 (en) * | 2007-07-27 | 2009-01-29 | Joseph Chou | Method of manufacturing thin-film based PV modules |
| US8298338B2 (en) * | 2007-12-26 | 2012-10-30 | Samsung Electronics Co., Ltd. | Chemical vapor deposition apparatus |
| KR101004822B1 (ko) * | 2008-04-18 | 2010-12-28 | 삼성엘이디 주식회사 | 화학 기상 증착 장치 |
| KR100982987B1 (ko) * | 2008-04-18 | 2010-09-17 | 삼성엘이디 주식회사 | 화학 기상 증착 장치 |
| JP5457021B2 (ja) * | 2008-12-22 | 2014-04-02 | 東京エレクトロン株式会社 | 混合ガスの供給方法及び混合ガスの供給装置 |
| JP5179339B2 (ja) * | 2008-12-22 | 2013-04-10 | 東京エレクトロン株式会社 | 混合ガスの供給方法及び混合ガスの供給装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE345859C (de) * | 1919-10-26 | 1922-03-03 | Michel Schmierer | Glimmlichtroehre zur Erzeugung leuchtender Zeichen, Zeichnungen o. dgl., insbesondere fuer Reklame |
| US3675066A (en) * | 1970-09-04 | 1972-07-04 | Sperry Rand Corp | Planar raised cathode alpha-numeric gas discharge indicator |
| US3757733A (en) * | 1971-10-27 | 1973-09-11 | Texas Instruments Inc | Radial flow reactor |
-
1976
- 1976-01-22 US US05/651,555 patent/US4033287A/en not_active Expired - Lifetime
-
1977
- 1977-01-17 FR FR7701184A patent/FR2339001A1/fr active Granted
- 1977-01-19 BE BE174190A patent/BE850518A/xx not_active IP Right Cessation
- 1977-01-20 DE DE19772702120 patent/DE2702120A1/de not_active Ceased
- 1977-01-21 GB GB2489/77A patent/GB1563529A/en not_active Expired
- 1977-01-22 JP JP543977A patent/JPS52132677A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62281913A (ja) * | 1986-05-30 | 1987-12-07 | 株式会社 ヒロ−・ミラ− | 着色鏡及びその製造方法 |
| JPH03269401A (ja) * | 1990-03-19 | 1991-12-02 | Nippon Sheet Glass Co Ltd | 装飾反射面付透明体の製法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS52132677A (en) | 1977-11-07 |
| US4033287A (en) | 1977-07-05 |
| FR2339001B1 (en:Method) | 1979-03-09 |
| FR2339001A1 (fr) | 1977-08-19 |
| BE850518A (fr) | 1977-05-16 |
| GB1563529A (en) | 1980-03-26 |
| DE2702120A1 (de) | 1977-07-28 |