JPS5727030A - Formation of resist pattern - Google Patents

Formation of resist pattern

Info

Publication number
JPS5727030A
JPS5727030A JP10125380A JP10125380A JPS5727030A JP S5727030 A JPS5727030 A JP S5727030A JP 10125380 A JP10125380 A JP 10125380A JP 10125380 A JP10125380 A JP 10125380A JP S5727030 A JPS5727030 A JP S5727030A
Authority
JP
Japan
Prior art keywords
fpm
substrate
resist pattern
formation
dimethyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10125380A
Other languages
English (en)
Inventor
Tadamasa Ogawa
Minoru Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10125380A priority Critical patent/JPS5727030A/ja
Publication of JPS5727030A publication Critical patent/JPS5727030A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP10125380A 1980-07-25 1980-07-25 Formation of resist pattern Pending JPS5727030A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10125380A JPS5727030A (en) 1980-07-25 1980-07-25 Formation of resist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10125380A JPS5727030A (en) 1980-07-25 1980-07-25 Formation of resist pattern

Publications (1)

Publication Number Publication Date
JPS5727030A true JPS5727030A (en) 1982-02-13

Family

ID=14295744

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10125380A Pending JPS5727030A (en) 1980-07-25 1980-07-25 Formation of resist pattern

Country Status (1)

Country Link
JP (1) JPS5727030A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57142637A (en) * 1981-02-27 1982-09-03 Fujitsu Ltd Treatment of negative type resist

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49115777A (ja) * 1973-03-08 1974-11-05

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49115777A (ja) * 1973-03-08 1974-11-05

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57142637A (en) * 1981-02-27 1982-09-03 Fujitsu Ltd Treatment of negative type resist
JPH023495B2 (ja) * 1981-02-27 1990-01-23 Fujitsu Ltd

Similar Documents

Publication Publication Date Title
DE69330921D1 (de) Herstellungsverfahren von dünnem Film
TW238363B (ja)
DE3063134D1 (en) Method of producing relief structures resistant to a high temperature, relief structures produced thereby and their use
DE3169802D1 (en) Process for the production of highly heat-resistant relief structures, and their use
JPS5727030A (en) Formation of resist pattern
JPS57192223A (en) Treatment of electromagnetic steel sheet
JPS57124436A (en) Correction of pattern defect
DE3062826D1 (en) Method of producing heat resistant relief structures, relief structures produced thereby and their use
JPS57103318A (en) Method for patterning
EP0081977A3 (en) A maskless process for applying a patterned coating
JPS5715514A (en) Manufacture for reed screen electrode for elastic surface wave
JPS6483685A (en) Masking method for minute working
JPS5657039A (en) Forming method of metal pattern
JPS5732444A (en) Formation of resist pattern
JPS57136646A (en) Positive type photoresist developing method
JPS5655943A (en) Pattern forming method
JPS5632143A (en) Manufacture of photomask
TH37256EX (th) กรรมวิธีสำหรับการก่อเกิดฟิล์มบาง
JPS5376972A (en) Treating method for waste solution from magnetic tape manufacture
JPS5381079A (en) Mask forming method
JPS5745261A (en) Forming method for pattern
JPS57192222A (en) Treatment of electromagnetic steel sheet
JPS52127173A (en) Pattern formation method
JPS6473729A (en) Formation of thin film
JPS56164816A (en) Pattern forming method