JPS5723229A - Semiconductor device and its manufacture - Google Patents
Semiconductor device and its manufactureInfo
- Publication number
- JPS5723229A JPS5723229A JP9691280A JP9691280A JPS5723229A JP S5723229 A JPS5723229 A JP S5723229A JP 9691280 A JP9691280 A JP 9691280A JP 9691280 A JP9691280 A JP 9691280A JP S5723229 A JPS5723229 A JP S5723229A
- Authority
- JP
- Japan
- Prior art keywords
- film
- adhesion
- concentration
- semiconductor device
- polyimide resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 abstract 3
- 239000013522 chelant Substances 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 abstract 3
- 229920001721 polyimide Polymers 0.000 abstract 3
- 239000009719 polyimide resin Substances 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9691280A JPS5723229A (en) | 1980-07-17 | 1980-07-17 | Semiconductor device and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9691280A JPS5723229A (en) | 1980-07-17 | 1980-07-17 | Semiconductor device and its manufacture |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5723229A true JPS5723229A (en) | 1982-02-06 |
JPS6331932B2 JPS6331932B2 (enrdf_load_stackoverflow) | 1988-06-27 |
Family
ID=14177566
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9691280A Granted JPS5723229A (en) | 1980-07-17 | 1980-07-17 | Semiconductor device and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5723229A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61232646A (ja) * | 1985-04-09 | 1986-10-16 | Nec Corp | 樹脂封止型半導体集積回路装置 |
-
1980
- 1980-07-17 JP JP9691280A patent/JPS5723229A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61232646A (ja) * | 1985-04-09 | 1986-10-16 | Nec Corp | 樹脂封止型半導体集積回路装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS6331932B2 (enrdf_load_stackoverflow) | 1988-06-27 |
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