JPS5721868A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5721868A JPS5721868A JP9574680A JP9574680A JPS5721868A JP S5721868 A JPS5721868 A JP S5721868A JP 9574680 A JP9574680 A JP 9574680A JP 9574680 A JP9574680 A JP 9574680A JP S5721868 A JPS5721868 A JP S5721868A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- type
- si3n4 film
- film
- become
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 238000004904 shortening Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To increase the mutual conductance of a junction type field effect transistor retaining Si3N4 film on the part formed with a gate and shortening the channel length in a method of diffusing the gate of the transistor. CONSTITUTION:An n type epitaxial layer 2 is formed on a p type Si substrate 1, n<+> type diffused resion 4 becoming source and drain is formed, an Si3N4 film is deposited on the overall surface, the part 6a to become a gate is retained by a photoresist treatment, the residual part is etched and removed, and an SiO2 film 7 is formed on the removed part. Then, an Si3N4 film 6a is selectively etched, the surface is then lightly oxidized, B ions are injected in high density, an annealing is performed to diffuse B, and a p<+> type layer 5 to become a gate is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9574680A JPS5721868A (en) | 1980-07-15 | 1980-07-15 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9574680A JPS5721868A (en) | 1980-07-15 | 1980-07-15 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5721868A true JPS5721868A (en) | 1982-02-04 |
Family
ID=14146050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9574680A Pending JPS5721868A (en) | 1980-07-15 | 1980-07-15 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5721868A (en) |
-
1980
- 1980-07-15 JP JP9574680A patent/JPS5721868A/en active Pending
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