JPS57207330A - Method of stabilizing treatment for target material - Google Patents

Method of stabilizing treatment for target material

Info

Publication number
JPS57207330A
JPS57207330A JP9186181A JP9186181A JPS57207330A JP S57207330 A JPS57207330 A JP S57207330A JP 9186181 A JP9186181 A JP 9186181A JP 9186181 A JP9186181 A JP 9186181A JP S57207330 A JPS57207330 A JP S57207330A
Authority
JP
Japan
Prior art keywords
target
sic
target material
impurities
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9186181A
Other languages
Japanese (ja)
Inventor
Kazushi Yamamoto
Takeshi Nagai
Ikuo Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9186181A priority Critical patent/JPS57207330A/en
Publication of JPS57207330A publication Critical patent/JPS57207330A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Abstract

PURPOSE:To perform stable sputtering by performing the heat treatment of the target member in a vacuum in advance. CONSTITUTION:The SiC series target mateial is heated to 400 deg.C or more in the vacuum of 1X10<-4> Torr or more. At this time, most of impurities such as organic material on the surface of SiC series sintered body are decomposed and the residue is cleared away. Therefore when this target is used, stabilized sputtering performed without the influence of the impurities. The targets other than SiC have the similar effect.
JP9186181A 1981-06-15 1981-06-15 Method of stabilizing treatment for target material Pending JPS57207330A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9186181A JPS57207330A (en) 1981-06-15 1981-06-15 Method of stabilizing treatment for target material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9186181A JPS57207330A (en) 1981-06-15 1981-06-15 Method of stabilizing treatment for target material

Publications (1)

Publication Number Publication Date
JPS57207330A true JPS57207330A (en) 1982-12-20

Family

ID=14038329

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9186181A Pending JPS57207330A (en) 1981-06-15 1981-06-15 Method of stabilizing treatment for target material

Country Status (1)

Country Link
JP (1) JPS57207330A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60121267A (en) * 1983-12-01 1985-06-28 Ulvac Corp Method for rapidly degassing porous target

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60121267A (en) * 1983-12-01 1985-06-28 Ulvac Corp Method for rapidly degassing porous target
JPH0341546B2 (en) * 1983-12-01 1991-06-24

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