JPH0341546B2 - - Google Patents
Info
- Publication number
- JPH0341546B2 JPH0341546B2 JP58225401A JP22540183A JPH0341546B2 JP H0341546 B2 JPH0341546 B2 JP H0341546B2 JP 58225401 A JP58225401 A JP 58225401A JP 22540183 A JP22540183 A JP 22540183A JP H0341546 B2 JPH0341546 B2 JP H0341546B2
- Authority
- JP
- Japan
- Prior art keywords
- torr
- target
- porous
- sputtering
- minutes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 5
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
本発明はTa2O5、MoSi2等の多孔質ターゲツト
の急速排気方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for rapid evacuation of porous targets such as Ta 2 O 5 and MoSi 2 .
一般にターゲツトはその表面にゴミ、水分等の
不純物が付着しているので、スパツタリングを開
始する前に真空室内を10-6Torr台の高真空に排
気し、そこへArガスを導入して10-2〜10-3Torr
台とし、ターゲツトと基板との間のシヤツターを
閉じてスパツタを行ない、ターゲツトの表面をク
リーニングしたのち放電を維持したままシヤツタ
ーを開き基板へのスパツタを施す。 Generally, the target has impurities such as dust and moisture attached to its surface, so before starting sputtering, the vacuum chamber is evacuated to a high vacuum of 10 -6 Torr, and Ar gas is introduced there . 2 to 10-3 Torr
Use a stand as a stand, close the shutter between the target and the substrate, and perform sputtering. After cleaning the surface of the target, open the shutter while maintaining the discharge and sputter the substrate.
しかし、前記のような多孔質ターゲツトは実質
的な表面積が大きいので一旦大気中にさらすと大
量に水分等を吸着し、その後の排気に非常に時間
が掛り、多孔質ターゲツトを使用してのスパツタ
リングを迅速に開始出来ない不都合がある。 However, since the porous target described above has a large substantial surface area, once it is exposed to the atmosphere, it adsorbs a large amount of moisture, etc., and the subsequent evacuation takes a very long time, making it difficult to perform sputtering using a porous target. It is inconvenient that it cannot be started quickly.
本発明はこのような不都合を解消することを目
的としたもので、真空室内にTa2O5その他の多孔
質ターゲツトを設け、該真空室内を10-4乃至
10-5Torr台まで真空排気し、Arガスその他の不
活性ガスを注入して該室内を10-3Torr台とした
のち該多孔質ターゲツトに短時間のスパツタリン
グを施し、該不活性ガスを10-6Torr台まで排気
することを該多孔質ターゲツトのクリーニングに
先立ち行なうことを特徴とする。 The purpose of the present invention is to eliminate such inconveniences by providing a porous target such as Ta 2 O 5 in a vacuum chamber, and increasing the temperature of the vacuum chamber to 10 -4 to 10 -4.
The chamber was evacuated to a level of 10 -5 Torr, Ar gas or other inert gas was injected to bring the chamber to a level of 10 -3 Torr, and the porous target was sputtered for a short time to reduce the inert gas to 10 -3 Torr. The method is characterized in that the porous target is evacuated to a level of -6 Torr prior to cleaning.
本発明の実施例は次の通りである。 Examples of the invention are as follows.
真空室内にTa2O5の多孔質ターゲツトを設け、
大気を導入し、５分間放置して該ターゲツトに空
気中の水分等を吸着させた。 A porous target of Ta 2 O 5 was set up in the vacuum chamber,
Air was introduced, and the target was allowed to stand for 5 minutes to adsorb moisture, etc. in the air.
次いで該真空室内を１×10-4Torrに排気し、
Arガスを注入して室内を５×10-3Torrとし、基
板との間のシヤツターを閉じて2.5KWの電力で
５分間スパツタした。このあとArガスを排気し
て室内を５×10-6Torrとしたが、この圧力にま
で１×10-4Torrの時から要した時間は前記スパ
ツタの５分間を含めて25分間であつた。 Next, the vacuum chamber was evacuated to 1×10 -4 Torr,
Ar gas was injected to bring the inside of the room to 5 x 10 -3 Torr, the shutter between the substrate and the substrate was closed, and sputtering was performed for 5 minutes with a power of 2.5 KW. After this, the Ar gas was exhausted to bring the pressure in the room to 5 x 10 -6 Torr, and it took 25 minutes to reach this pressure from 1 x 10 -4 Torr, including the 5 minutes of sputtering. .
途中の１×10-5Torrになるまではわずか18分
間２×10-5Torrまでは10分間であつた。このあ
と５×10-6Torrの室内にArガスを導入して
10-3Torrとし、従来と同様に該多孔質ターゲツ
トのクリーニングのためのスパツタを行なつたの
ちシヤツターを開いて基板へのスパツタを行なつ
た。 It took only 18 minutes to reach 1×10 -5 Torr, and 10 minutes to reach 2×10 -5 Torr. After this, Ar gas was introduced into the room at 5×10 -6 Torr.
After setting the temperature to 10 -3 Torr and performing sputtering to clean the porous target as in the conventional manner, the shutter was opened and sputtering was performed on the substrate.
これに対し前記と同条件で真空室内にTa2O5の
多孔質ターゲツトを設け、大気を導入し、５分間
放置して該ターゲツトに空気中の水分等を吸着さ
せ、直ちに前記と同一の排気系により排気した。
この場合２×10-5Torrまで到達するには37分も
掛り、２時間経過しても室内は５×10-6Torrに
ならず、多孔質ターゲツトをクリーニングするス
パツタを開始できなかつた。 On the other hand, a porous target of Ta 2 O 5 was placed in the vacuum chamber under the same conditions as above, air was introduced, and the target was left for 5 minutes to adsorb moisture etc. in the air. The system was evacuated.
In this case, it took 37 minutes to reach 2 x 10 -5 Torr, and even after 2 hours the temperature in the room did not reach 5 x 10 -6 Torr, making it impossible to start sputtering to clean the porous target.
このように本発明によるときは多孔質ターゲツ
トを設けた室内を10-4〜10-5Torr台の比較的低
い真空としたのち不活性ガスを注入して
10-3Torr台とし、該ターゲツトに数分間のスパ
ツタを施して室内を10-6Torr台に排気すること
により画一的に排気を続けるよりも短時間で高い
真空度が得られ、多孔質ターゲツトのクリーニン
グとスパツタリングを迅速に開始することが出来
るようになる等の効果がある。 In this way, according to the present invention, the chamber containing the porous target is brought to a relatively low vacuum of 10 -4 to 10 -5 Torr, and then inert gas is injected.
By using a 10 -3 Torr level and sputtering the target for several minutes to evacuate the room to a 10 -6 Torr level, a high degree of vacuum can be obtained in a shorter time than by uniformly continuing the exhaust. There are effects such as being able to quickly start cleaning and sputtering the target.
Claims (1)
を設け、該真空室内を10-4乃至10-5Torr台まで
真空排気し、Arガスその他の不活性ガスを注入
して該室内を10-3Torr台としたのち該多孔質タ
ーゲツトに短時間のスパツタリングを施し、該不
活性ガスを10-6Torr台まで排気することを該多
孔質ターゲツトのクリーニングに先立ち行なうこ
とを特徴とする多孔質ターゲツトの急速排気方
法。1 Place a porous target such as Ta 2 O 5 in a vacuum chamber, evacuate the vacuum chamber to 10 -4 to 10 -5 Torr, and inject Ar gas or other inert gas to reduce the inside of the chamber to 10 -5 Torr. 3 Torr level, the porous target is subjected to short-time sputtering, and the inert gas is evacuated to the 10 -6 Torr level prior to cleaning the porous target. rapid exhaust method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22540183A JPS60121267A (en) | 1983-12-01 | 1983-12-01 | Method for rapidly degassing porous target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22540183A JPS60121267A (en) | 1983-12-01 | 1983-12-01 | Method for rapidly degassing porous target |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60121267A JPS60121267A (en) | 1985-06-28 |
| JPH0341546B2 true JPH0341546B2 (en) | 1991-06-24 |
Family
ID=16828782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22540183A Granted JPS60121267A (en) | 1983-12-01 | 1983-12-01 | Method for rapidly degassing porous target |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60121267A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01215969A (en) * | 1988-02-23 | 1989-08-29 | Fujitsu Ltd | Formation of tantalum oxide film |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57207330A (en) * | 1981-06-15 | 1982-12-20 | Matsushita Electric Ind Co Ltd | Method of stabilizing treatment for target material |
-
1983
- 1983-12-01 JP JP22540183A patent/JPS60121267A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57207330A (en) * | 1981-06-15 | 1982-12-20 | Matsushita Electric Ind Co Ltd | Method of stabilizing treatment for target material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60121267A (en) | 1985-06-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |