JPS57194254A - Cathode for insulator target in rf sputtering - Google Patents

Cathode for insulator target in rf sputtering

Info

Publication number
JPS57194254A
JPS57194254A JP7804781A JP7804781A JPS57194254A JP S57194254 A JPS57194254 A JP S57194254A JP 7804781 A JP7804781 A JP 7804781A JP 7804781 A JP7804781 A JP 7804781A JP S57194254 A JPS57194254 A JP S57194254A
Authority
JP
Japan
Prior art keywords
target
electrode
spacer
insulator
discharging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7804781A
Other languages
English (en)
Other versions
JPS6010107B2 (ja
Inventor
Toshiaki Fujioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Nihon Shinku Gijutsu KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc, Nihon Shinku Gijutsu KK filed Critical Ulvac Inc
Priority to JP7804781A priority Critical patent/JPS6010107B2/ja
Publication of JPS57194254A publication Critical patent/JPS57194254A/ja
Publication of JPS6010107B2 publication Critical patent/JPS6010107B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP7804781A 1981-05-25 1981-05-25 Ｒｆスパツタリングにおける絶縁物タ−ゲツト用カソ−ド Expired JPS6010107B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7804781A JPS6010107B2 (ja) 1981-05-25 1981-05-25 Ｒｆスパツタリングにおける絶縁物タ−ゲツト用カソ−ド

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7804781A JPS6010107B2 (ja) 1981-05-25 1981-05-25 Ｒｆスパツタリングにおける絶縁物タ−ゲツト用カソ−ド

Publications (2)

Publication Number Publication Date
JPS57194254A true JPS57194254A (en) 1982-11-29
JPS6010107B2 JPS6010107B2 (ja) 1985-03-15

Family

ID=13650931

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7804781A Expired JPS6010107B2 (ja) 1981-05-25 1981-05-25 Ｒｆスパツタリングにおける絶縁物タ−ゲツト用カソ−ド

Country Status (1)

Country Link
JP (1) JPS6010107B2 (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59222575A (ja) * 1983-05-31 1984-12-14 Teijin Ltd 薄膜形成装置
JPS60197873A (ja) * 1984-03-19 1985-10-07 Ulvac Corp スパツタリング装置における絶縁物タ−ゲツト用ア−スシ−ルド装置
JPS61177375A (ja) * 1985-01-30 1986-08-09 Shimadzu Corp 平面型プラズマｃｖｄ装置
JPH044864U (ja) * 1990-04-27 1992-01-17
WO2004044261A3 (en) * 2002-11-14 2004-08-26 Zond Inc High deposition rate sputtering
US6878249B2 (en) * 2000-06-16 2005-04-12 Anelva Corporation High frequency sputtering device
US7147759B2 (en) 2002-09-30 2006-12-12 Zond, Inc. High-power pulsed magnetron sputtering
US8125155B2 (en) 2004-02-22 2012-02-28 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
WO2016021101A1 (ja) * 2014-08-08 2016-02-11 株式会社アルバック ターゲットアッセンブリ
WO2016088284A1 (ja) * 2014-12-03 2016-06-09 株式会社アルバック ターゲットアッセンブリ

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59222575A (ja) * 1983-05-31 1984-12-14 Teijin Ltd 薄膜形成装置
JPS60197873A (ja) * 1984-03-19 1985-10-07 Ulvac Corp スパツタリング装置における絶縁物タ−ゲツト用ア−スシ−ルド装置
JPS61177375A (ja) * 1985-01-30 1986-08-09 Shimadzu Corp 平面型プラズマｃｖｄ装置
JPH0542510B2 (ja) * 1985-01-30 1993-06-28 Shimadzu Corp
JPH044864U (ja) * 1990-04-27 1992-01-17
US6878249B2 (en) * 2000-06-16 2005-04-12 Anelva Corporation High frequency sputtering device
US7147759B2 (en) 2002-09-30 2006-12-12 Zond, Inc. High-power pulsed magnetron sputtering
US6896773B2 (en) 2002-11-14 2005-05-24 Zond, Inc. High deposition rate sputtering
WO2004044261A3 (en) * 2002-11-14 2004-08-26 Zond Inc High deposition rate sputtering
US7811421B2 (en) 2002-11-14 2010-10-12 Zond, Inc. High deposition rate sputtering
US8125155B2 (en) 2004-02-22 2012-02-28 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
WO2016021101A1 (ja) * 2014-08-08 2016-02-11 株式会社アルバック ターゲットアッセンブリ
JPWO2016021101A1 (ja) * 2014-08-08 2017-05-25 株式会社アルバック ターゲットアッセンブリ
US9972479B2 (en) 2014-08-08 2018-05-15 Ulvac, Inc. Target assembly
WO2016088284A1 (ja) * 2014-12-03 2016-06-09 株式会社アルバック ターゲットアッセンブリ
KR20170089918A (ko) * 2014-12-03 2017-08-04 가부시키가이샤 알박 타겟 어셈블리
JPWO2016088284A1 (ja) * 2014-12-03 2017-08-10 株式会社アルバック ターゲットアッセンブリ
US10435783B2 (en) 2014-12-03 2019-10-08 Ulvac, Inc. Target assembly

Also Published As

Publication number Publication date
JPS6010107B2 (ja) 1985-03-15

Similar Documents

Publication Publication Date Title
Koenig et al. Application of RF discharges to sputtering
US4038171A (en) Supported plasma sputtering apparatus for high deposition rate over large area
ES8303542A1 (es) Un procedimiento y su aparato correspondiente para la metalizacion ionica de un sustrato.
DE3373590D1 (en) Magnetron cathode sputtering system
GB1465745A (en) Sputtering apparatus
DK304386A (da) Fremgangsmaade og apparat til udfaeldning
EP0786795A3 (en) Method for manufacturing thin film, and deposition apparatus
JPS57194254A (en) Cathode for insulator target in rf sputtering
JPS53121454A (en) Electron source of thin film electric field emission type and its manufacture
ES2004174A6 (es) Un objetivo de aparato de revestimiento por deposicion ctodica
EP0211413A3 (en) Arc ignition device
JPS557554A (en) Dielectric thin film
JPS5538919A (en) Sputtering apparatus
JPS5558371A (en) Sputtering apparatus
JPS5569257A (en) Low-temperature sputtering unit
JPS546874A (en) Thin film forming apparatus
JPS6484407A (en) Manufacture of thin film magnetic head
JPS6428366A (en) Crucible of vacuum deposition device
JPS5538946A (en) Sputtering apparatus
GB1169748A (en) Radio Frequency Sputtering Apparatus
JPS5751263A (en) Vacuum vapor depositing device
JPS54162450A (en) Ion source for ion injector
JPS5640282A (en) Preparation of semiconductor element
JPS5211759A (en) Gas discharge display panel
JPS5677379A (en) Metal film depositing apparatus