JPS57184233A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57184233A JPS57184233A JP6900781A JP6900781A JPS57184233A JP S57184233 A JPS57184233 A JP S57184233A JP 6900781 A JP6900781 A JP 6900781A JP 6900781 A JP6900781 A JP 6900781A JP S57184233 A JPS57184233 A JP S57184233A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- wiring
- aluminum wiring
- insulating film
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To reduce parasitic capacitance among mutual wiring layers, and to improve the coating rate of the difference in stages of upper layer wiring by positioning the third wiring layer at a connecting section connecting the first wiring layer and the second wiring layer. CONSTITUTION:The first layer aluminum wiring 51 is connected to the second layer aluminum wiring 54 through the layer connecting aluminum wiring 53 through a layer insulating film opening section 52, and a layer insulating film 63 is positioned in order to interrupt the effect of anodic oxidation on the first layer aluminum wiring 61 when layer connecting aluminum wiring 65 is formed. The first layer aluminum wiring 61 is connected to the second layer aluminum wiring 67 through the layer connecting aluminum wiring 65 through an isulating opening section 64 bored onto the layer insulating film 63 as the upper layer of the first layer aluminum wiring and an anode oxidizing insulator 62, and a layer connecting wiring layer anode oxidizing inuslator 66 is positioned between the first layer aluminum wiring 61 and the second layer aluminum wiring 67 except the connecting section, thus reducing parasitic wiring capacitance.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6900781A JPS57184233A (en) | 1981-05-08 | 1981-05-08 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6900781A JPS57184233A (en) | 1981-05-08 | 1981-05-08 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57184233A true JPS57184233A (en) | 1982-11-12 |
Family
ID=13390100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6900781A Pending JPS57184233A (en) | 1981-05-08 | 1981-05-08 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57184233A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995008841A1 (en) * | 1993-09-20 | 1995-03-30 | Labunov Vladimir A | Process for making multilevel interconnections of electronic components |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4941854A (en) * | 1972-08-30 | 1974-04-19 | ||
JPS4998587A (en) * | 1973-01-22 | 1974-09-18 | ||
JPS5045580A (en) * | 1973-08-24 | 1975-04-23 |
-
1981
- 1981-05-08 JP JP6900781A patent/JPS57184233A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4941854A (en) * | 1972-08-30 | 1974-04-19 | ||
JPS4998587A (en) * | 1973-01-22 | 1974-09-18 | ||
JPS5045580A (en) * | 1973-08-24 | 1975-04-23 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995008841A1 (en) * | 1993-09-20 | 1995-03-30 | Labunov Vladimir A | Process for making multilevel interconnections of electronic components |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0236123A3 (en) | A semiconductor device and method for preparing the same | |
EP0195970A3 (en) | Method for passivating an undercut in semiconductor device preparation | |
JPS5570060A (en) | Semiconductor device | |
JPS57184233A (en) | Semiconductor device | |
JPS52143785A (en) | Semiconductor device | |
JPS57149752A (en) | Structure of multilayer wiring | |
JPS57132341A (en) | Multilayer wiring structure in semiconductor device | |
JPS57166048A (en) | Semiconductor integrated circuit | |
JPS5732655A (en) | Semiconductor integrated circuit device | |
JPS5352388A (en) | Semiconductor device | |
JPS57147253A (en) | Manufacture of semiconductor device | |
JPS5353989A (en) | Production of semiconductor device | |
JPS546775A (en) | Semiconductor device featuring stepped electrode structure | |
JPS539483A (en) | Semiconductor device | |
JPS5735370A (en) | Semiconductor device | |
JPS56104476A (en) | Manufacture of semiconductor device | |
JPS5793569A (en) | Manufacture of semiconductor device | |
JPS5383476A (en) | Reverse conducting thyristor | |
JPS53129982A (en) | Production of mos type semiconductor devices | |
JPS5743442A (en) | Manufacture of semiconductor device | |
JPS575329A (en) | Manufacture of semiconductor device | |
JPS5341987A (en) | Semiconductor unit and its production | |
JPS56153771A (en) | Semiconductor device | |
JPS575346A (en) | Semiconductor device and manufacture thereof | |
JPS56160052A (en) | Semiconductor device |