JPS57183400A - Method and apparatus for liquid-phase growth of 2-6 compound - Google Patents

Method and apparatus for liquid-phase growth of 2-6 compound

Info

Publication number
JPS57183400A
JPS57183400A JP6913081A JP6913081A JPS57183400A JP S57183400 A JPS57183400 A JP S57183400A JP 6913081 A JP6913081 A JP 6913081A JP 6913081 A JP6913081 A JP 6913081A JP S57183400 A JPS57183400 A JP S57183400A
Authority
JP
Japan
Prior art keywords
vapor pressure
liquid
phase growth
compound
solvent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6913081A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6110439B2 (enExample
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP6913081A priority Critical patent/JPS57183400A/ja
Publication of JPS57183400A publication Critical patent/JPS57183400A/ja
Publication of JPS6110439B2 publication Critical patent/JPS6110439B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
JP6913081A 1981-05-07 1981-05-07 Method and apparatus for liquid-phase growth of 2-6 compound Granted JPS57183400A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6913081A JPS57183400A (en) 1981-05-07 1981-05-07 Method and apparatus for liquid-phase growth of 2-6 compound

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6913081A JPS57183400A (en) 1981-05-07 1981-05-07 Method and apparatus for liquid-phase growth of 2-6 compound

Publications (2)

Publication Number Publication Date
JPS57183400A true JPS57183400A (en) 1982-11-11
JPS6110439B2 JPS6110439B2 (enExample) 1986-03-29

Family

ID=13393746

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6913081A Granted JPS57183400A (en) 1981-05-07 1981-05-07 Method and apparatus for liquid-phase growth of 2-6 compound

Country Status (1)

Country Link
JP (1) JPS57183400A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59172280A (ja) * 1983-03-19 1984-09-28 Semiconductor Res Found ２−６族間化合物半導体ヘテロ接合装置
US4572763A (en) * 1982-07-14 1986-02-25 Zaidan Hojin Handotai Kenkyu Shinkokai Method and apparatus for performing epitaxial growth of ZnSe crystal from a melt thereof
US4909998A (en) * 1982-06-24 1990-03-20 Zaidan Hojin Handotai Kenkyu Shinkokai Apparatus for performing solution growth of group II-VI compound semiconductor crystal
US4917757A (en) * 1982-07-02 1990-04-17 Zaidan Hojin Handotai Kenkyu Shinkokai Method of performing solution growth of ZnSe crystals
JPH02129099A (ja) * 1988-11-07 1990-05-17 Nippon Sheet Glass Co Ltd ＺｎＳｅ単結晶の成長方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4909998A (en) * 1982-06-24 1990-03-20 Zaidan Hojin Handotai Kenkyu Shinkokai Apparatus for performing solution growth of group II-VI compound semiconductor crystal
US4917757A (en) * 1982-07-02 1990-04-17 Zaidan Hojin Handotai Kenkyu Shinkokai Method of performing solution growth of ZnSe crystals
US4572763A (en) * 1982-07-14 1986-02-25 Zaidan Hojin Handotai Kenkyu Shinkokai Method and apparatus for performing epitaxial growth of ZnSe crystal from a melt thereof
JPS59172280A (ja) * 1983-03-19 1984-09-28 Semiconductor Res Found ２−６族間化合物半導体ヘテロ接合装置
JPH02129099A (ja) * 1988-11-07 1990-05-17 Nippon Sheet Glass Co Ltd ＺｎＳｅ単結晶の成長方法

Also Published As

Publication number Publication date
JPS6110439B2 (enExample) 1986-03-29

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