JPS57178377A - Method of producing field effect transistor - Google Patents

Method of producing field effect transistor

Info

Publication number
JPS57178377A
JPS57178377A JP57001072A JP107282A JPS57178377A JP S57178377 A JPS57178377 A JP S57178377A JP 57001072 A JP57001072 A JP 57001072A JP 107282 A JP107282 A JP 107282A JP S57178377 A JPS57178377 A JP S57178377A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
producing field
producing
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57001072A
Other languages
English (en)
Other versions
JPS634955B2 (ja
Inventor
Bitsukusuraa Houraa Aran
Roozenbaagu Robaato
Suchiibun Ratsupurehito Hansu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS57178377A publication Critical patent/JPS57178377A/ja
Publication of JPS634955B2 publication Critical patent/JPS634955B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2258—Diffusion into or out of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP57001072A 1981-04-17 1982-01-08 Method of producing field effect transistor Granted JPS57178377A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/255,187 US4389768A (en) 1981-04-17 1981-04-17 Self-aligned process for fabricating gallium arsenide metal-semiconductor field effect transistors

Publications (2)

Publication Number Publication Date
JPS57178377A true JPS57178377A (en) 1982-11-02
JPS634955B2 JPS634955B2 (ja) 1988-02-01

Family

ID=22967222

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57001072A Granted JPS57178377A (en) 1981-04-17 1982-01-08 Method of producing field effect transistor

Country Status (4)

Country Link
US (1) US4389768A (ja)
EP (1) EP0063221B1 (ja)
JP (1) JPS57178377A (ja)
DE (1) DE3264480D1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57178373A (en) * 1981-04-27 1982-11-02 Sumitomo Electric Ind Ltd Schottky gate field-effect transistor
JPS59114871A (ja) * 1982-12-21 1984-07-03 Toshiba Corp シヨツトキ−ゲ−ト型ＧａＡｓ電界効果トランジスタの製造方法
US5122075A (en) * 1991-05-17 1992-06-16 Amp Incorporated Electrical connector with improved retention feature

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2525028A1 (fr) * 1982-04-09 1983-10-14 Chauffage Nouvelles Tech Procede de fabrication de transistors a effet de champ, en gaas, par implantations ioniques et transistors ainsi obtenus
JPS5950567A (ja) * 1982-09-16 1984-03-23 Hitachi Ltd 電界効果トランジスタの製造方法
JPS6046074A (ja) * 1983-08-24 1985-03-12 Toshiba Corp 電界効果トランジスタの製造方法
JPH0693509B2 (ja) * 1983-08-26 1994-11-16 シャープ株式会社 薄膜トランジスタ
US4636822A (en) * 1984-08-27 1987-01-13 International Business Machines Corporation GaAs short channel lightly doped drain MESFET structure and fabrication
US4855246A (en) * 1984-08-27 1989-08-08 International Business Machines Corporation Fabrication of a gaas short channel lightly doped drain mesfet
US4759822A (en) * 1984-10-12 1988-07-26 Triquint Semiconductor Inc. Methods for producing an aperture in a surface
US4592793A (en) * 1985-03-15 1986-06-03 International Business Machines Corporation Process for diffusing impurities into a semiconductor body vapor phase diffusion of III-V semiconductor substrates
JPS61256675A (ja) * 1985-05-09 1986-11-14 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタの製造方法
US4710478A (en) * 1985-05-20 1987-12-01 United States Of America As Represented By The Secretary Of The Navy Method for making germanium/gallium arsenide high mobility complementary logic transistors
US4632713A (en) * 1985-07-31 1986-12-30 Texas Instruments Incorporated Process of making Schottky barrier devices formed by diffusion before contacting
JPH02295855A (ja) * 1989-05-11 1990-12-06 Isamu Miura 紙揃え装置
US4927773A (en) * 1989-06-05 1990-05-22 Santa Barbara Research Center Method of minimizing implant-related damage to a group II-VI semiconductor material
US5278430A (en) * 1989-11-18 1994-01-11 Kabushiki Kaisha Toshiba Complementary semiconductor device using diamond thin film and the method of manufacturing this device
JPH0661840U (ja) * 1993-02-02 1994-09-02 新王子製紙株式会社 平判紙の積替装置
US5759880A (en) * 1997-01-02 1998-06-02 Motorola, Inc. Resistless methods of fabricating FETs
US6861758B2 (en) * 2002-08-30 2005-03-01 Intel Corporation Structure and manufacturing process of localized shunt to reduce electromigration failure of copper dual damascene process

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5039879A (ja) * 1973-08-13 1975-04-12
JPS5591881A (en) * 1978-12-29 1980-07-11 Ibm Method of fabricating schottky barrier fet

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3479234A (en) * 1967-05-01 1969-11-18 Gen Electric Method of producing field effect transistors
US3574010A (en) * 1968-12-30 1971-04-06 Texas Instruments Inc Fabrication of metal insulator semiconductor field effect transistors
US3749614A (en) * 1970-09-14 1973-07-31 Rca Corp Fabrication of semiconductor devices
US3713912A (en) * 1971-02-11 1973-01-30 Bell Telephone Labor Inc Gallium arsenide field effect structure
US3856588A (en) * 1972-10-11 1974-12-24 Matsushita Electric Ind Co Ltd Stabilizing insulation for diffused group iii-v devices
US3855690A (en) * 1972-12-26 1974-12-24 Westinghouse Electric Corp Application of facet-growth to self-aligned schottky barrier gate field effect transistors
US3943622A (en) * 1972-12-26 1976-03-16 Westinghouse Electric Corporation Application of facet-growth to self-aligned Shottky barrier gate field effect transistors
JPS5274285A (en) * 1975-12-17 1977-06-22 Hitachi Ltd Production of semiconductor device
US4111725A (en) * 1977-05-06 1978-09-05 Bell Telephone Laboratories, Incorporated Selective lift-off technique for fabricating gaas fets
US4287661A (en) * 1980-03-26 1981-09-08 International Business Machines Corporation Method for making an improved polysilicon conductor structure utilizing reactive-ion etching and thermal oxidation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5039879A (ja) * 1973-08-13 1975-04-12
JPS5591881A (en) * 1978-12-29 1980-07-11 Ibm Method of fabricating schottky barrier fet

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57178373A (en) * 1981-04-27 1982-11-02 Sumitomo Electric Ind Ltd Schottky gate field-effect transistor
JPS59114871A (ja) * 1982-12-21 1984-07-03 Toshiba Corp シヨツトキ−ゲ−ト型ＧａＡｓ電界効果トランジスタの製造方法
US5122075A (en) * 1991-05-17 1992-06-16 Amp Incorporated Electrical connector with improved retention feature

Also Published As

Publication number Publication date
EP0063221A2 (en) 1982-10-27
EP0063221B1 (en) 1985-07-03
JPS634955B2 (ja) 1988-02-01
DE3264480D1 (en) 1985-08-08
EP0063221A3 (en) 1983-07-20
US4389768A (en) 1983-06-28

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